Semiconductor device
An IGBT is disposed in an IGBT portion, and an FWD is disposed in an FWD portion. A p-type base region and an n − -type drift region are alternately exposed in a trench longitudinal direction in a substrate front surface in a mesa portion between neighboring trenches in the IGBT portion. A p-type anode region and the n − -type drift region are alternately exposed in the trench longitudinal direction in the substrate front surface in a mesa portion in the FWD portion, and a repetitive structure is formed with a portion of the n − -type drift region sandwiched between p-type anode regions and one p-type anode region in contact with the portion as one unit region. The proportion occupied by the p-type anode region in one unit region (an anode ratio) (α) is 50% to 100%.
1. A semiconductor device comprising a first element region in which an insulated gate bipolar transistor is provided and a second element region in which a diode is provided on a semiconductor substrate that forms a first conductivity type drift region, the semiconductor device further comprising:
a plurality of trenches provided in stripe form extending in a trench longitudinal direction perpendicular to a direction in which the first element region and second element region are aligned from the first element region across the second element region in a front surface of the semiconductor substrate;
a gate insulating film provided along side walls and bottom surfaces of the trenches;
a gate electrode provided on an inner side of the gate insulating film inside the trenches;
a second conductivity type base region selectively provided in a mesa portion between neighboring trenches of the first element region;
a second conductivity type anode region selectively provided in the mesa portion between neighboring trenches of the second element region;
a first conductivity type emitter region selectively provided inside the base region;
a first electrode in contact with the base region, emitter region, and anode region;
a second conductivity type collector region provided on a back surface of the semiconductor substrate in the first element region;
a first conductivity type cathode region provided on the back surface of the semiconductor substrate in the second element region; and
a second electrode in contact with the collector region and cathode region, wherein
the anode region and drift region are repeatedly, alternately disposed in the trench longitudinal direction in a top surface of the mesa portion between neighboring trenches of the second element region.
2. The semiconductor device according to claim 1 , wherein built-in depletion layers spreading into the mesa portion from each of neighboring anode regions are linked to each other.
3. The semiconductor device according to claim 1 , wherein
the first electrode is further in contact with the drift region in the second element region, and
a proportion occupied by the anode region of a unit region formed of the anode region and the drift region in a portion sandwiched by the anode region and the anode region neighboring the anode region in the trench longitudinal direction is less than 50%.
4. The semiconductor device according to claim 3 , wherein the drift region and the first electrode form a Schottky junction.
5. A semiconductor device comprising:
an insulated gate bipolar transistor (IGBT) region;
a diode region adjacent to the IGBT region;
wherein
the diode region includes parallel trenches and a repeating pattern of an anode region alternating with a drift region on a surface between the parallel trenches, and
a unit region in the diode region is defined as an anode region and an adjacent drift region on the surface between the parallel trenches.
6. A semiconductor device according to claim 5 , wherein
a first electrode is in contact with the drift region in the diode region, and
an anode ratio, defined as a ratio of a dimension of the anode region of the unit region to a dimension of the unit region as a whole, is less than 50%.
7. The semiconductor device of claim 6 , wherein an anode region and a drift region are connected to a common emitter electrode.
8. The semiconductor device according to claim 1 , wherein
the drift region in the top surface of the mesa portion is covered by an insulator film, and
a proportion occupied by the anode region of a unit region formed of the anode region and the drift region in a portion sandwiched by the anode region and the anode region neighboring the anode region in the trench longitudinal direction is 50% or more and less than 100%.
9. The semiconductor device of claim 5 , wherein
the drift region between the surface of the parallel trenches is covered by an insulator film, and
an anode ratio, defined as a ratio of a dimension of the anode region of the unit region to a dimension of the unit region as a whole, is 50% or more and less than 100%.
10. The semiconductor device of claim 7 , wherein the drift region and the first electrode form a Schottky junction.
11. The semiconductor device of claim 9 , wherein the anode ratio is between substantially 50% and substantially 75%.
12. The semiconductor device of claim 9 , wherein the anode ratio is substantially 75%.