IP Library Granted Patent US 9,537,078
Granted Patent B2
US 9,537,078 · App. 14/546,739 · Granted Jan 3, 2017

Manufacturing process of the thermoelectric conversion element

Inventors: Mei-Feng Lai (Hsinchu, TW); Zung-Hang Wei (Hsinchu, TW); Hao-Ting Huang (Hsinchu, TW)
Assignee: NATIONAL TSING HUA UNIVERSITY
H01L35/34H01L35/14H01L35/28
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Quick Facts
Patent No.
US 9,537,078
App. No.
14/546,739
Granted
Jan 3, 2017
Kind
B2
Abstract

A manufacturing process of the thermoelectric conversion element is provided, wherein the system using semiconductor process technology to the construction of the thermoelectric conversion element nanoscale thermoelectric effect to increase, and the use of different type and surface state of the sample to increase the thermoelectric conversion element thermoelectric figure of merit. Through the use of a specific thickness of deposition of nanostructures on a nanoscale roughening of the substrate cannot affect the conductivity of thermoelectric materials under, and also can improve the Seebeck coefficient and lower thermal conductivity in order to significantly enhance the thermoelectric figure of merit.

Claims (8)

1. A manufacturing process of a thermoelectric conversion element, comprising:

a) providing a substrate and manufacturing a microstructure having a nanoscale or a micron-scale roughness and at least comprising two-dimensional variation on the substrate;

b) disposing a thermoelectric material on the substrate to form an element having a nanoscale or a micron-scale roughness and at least comprising two-dimensional variation; and

c) respectively constructing contact electrodes at two ends of the element to enable the element guiding an electrical energy converted from a thermal energy for using;

wherein the manufacturing process of a thermoelectric conversion element further comprises emptying the substrate beneath the element by an etching process to suspend the element.

2. The manufacturing process of a thermoelectric conversion element of claim 1 , wherein the thermoelectric material comprises a rare earth element compound, a silicon-based material, a semiconductor material, a ferromagnetic material or a metal material, wherein a deposition thickness of the thermoelectric material is between 5 nm and 5 μm.

3. The manufacturing process of a thermoelectric conversion element of claim 1 , wherein the element comprises a straight line, a wave line, a Zigzag line or a thin film in aspect.

4. The manufacturing process of a thermoelectric conversion element of claim 2 , wherein when the thermoelectric material is the ferromagnetic material, using a magnetic field to provide diverse magnetic field intensities to change a thermal conductivity of the thermoelectric material so as to boost the thermoelectric figure of merit.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 21, 2014
From: LAI, MEI-FENG; WEI, ZUNG-HANG; HUANG, HAO-TING
To: NATIONAL TSING HUA UNIVERSITY
Reel/Frame 034230/0231 →
Priority Claims (1)
TW 103126303 A · Jul 31, 2014 · national
Continuity (1)
Related Publication 20160035958A1 · Feb 4, 2016