Method of reducing tungsten film roughness and resistivity
Methods for controlling crystal size in bulk tungsten layers are disclosed herein. Methods for depositing a bulk tungsten metal layer can include positioning a substrate with a barrier layer in a processing chamber, forming a tungsten nucleation layer, post-treating the nucleation layer with one or more treatment gas cycles including an activating gas and a purging gas, heating the substrate to a deposition temperature, and depositing a bulk tungsten layer with alternating nitrogen flow on the nucleation layer. The post-treatment cycling can be applied optionally to the bulk metal deposition with alternating nitrogen flow.
1. A method for depositing a bulk metal, comprising:
positioning a substrate in a processing chamber, the substrate having an barrier layer formed on the surface;
forming a nucleation layer;
treating the nucleation layer with one or more treatment gas cycles, the treatment gas cycles sequentially comprising:
flowing an activating gas; and
flowing a treatment purging gas;
heating the substrate to a deposition temperature; and
depositing a bulk metal layer on the nucleation layer with one or more metal layer deposition cycles, the metal layer deposition cycles sequentially comprising:
depositing a first layer on the nucleation layer by reacting a first processing gas, the first processing gas comprising a tungsten halide, a hydrogen-containing gas, and a nitrogen-containing gas;
purging the first processing gas from the chamber using a first purge gas, the first purge gas comprising the hydrogen-containing gas;
depositing a second layer on the first layer by reacting a second processing gas, the second processing gas comprising the tungsten halide and the hydrogen-containing gas, the second processing gas being free of nitrogen; and
purging the second processing gas from the chamber using a second purge gas, the second purge gas comprising the hydrogen-containing gas.
2. The method of claim 1 , wherein the tungsten halide is selected from the group consisting of tungsten hexafluoride (WF 6 ), tungsten hexachloride (WCl 6 ) and combinations thereof.
3. The method of claim 1 , wherein the hydrogen-containing gas is H 2 .
4. The method of claim 1 , wherein the second purge gas further comprises the nitrogen-containing gas.
5. The method of claim 1 , wherein the nitrogen-containing gas is N 2 .
6. The method of claim 5 , wherein the N 2 gas is less than 1% of the first processing gas.
7. The method of claim 1 , wherein the activating gas is diborane.
8. The method of claim 1 , wherein the treatment purging gas comprises argon gas.
9. The method of claim 1 , wherein the activating gas is flowed into the processing chamber for less than or equal to 10 seconds per cycle.
10. The method of claim 1 , wherein the treatment purging gas flows into the processing chamber for less than or equal to 10 seconds per cycle.
11. The method of claim 1 , wherein the activating gas and the treatment purging gas flow for an equal time period.
12. The method of claim 1 , wherein the activating gas flows for a total time period of less than 22 seconds.
13. The method of claim 1 , wherein the activating gas and the treatment purging gas are maintained at a cycle number, gas flow rate and gas flow time so as to only deposit on the nucleation layer.
14. The method of claim 1 , wherein the pressure is increased during the deposition of the first layer or the second layer.
15. A method for depositing a bulk metal, comprising:
positioning a substrate in a processing chamber;
heating the substrate to a deposition temperature;
depositing a nucleation layer on the surface of the substrate, wherein the nucleation layer comprises tungsten; and
depositing a bulk metal layer on the nucleation layer with one or more metal layer deposition cycles, the metal layer deposition cycles sequentially comprising:
flowing a first processing gas to the substrate to deposit a first layer, the first processing gas comprising tungsten halide, a hydrogen-containing gas and a nitrogen-containing gas;
flowing a first purge gas to the processing chamber, the first purge gas comprising the hydrogen-containing gas;
flowing a second processing gas to the substrate to deposit a second layer, the second processing gas comprising the tungsten halide and the hydrogen-containing gas, the second processing gas being free of nitrogen; and
flowing a second purge gas to the processing chamber, the second purge gas comprising the hydrogen-containing gas.
16. The method of claim 15 , wherein the tungsten halide is selected from the group consisting of tungsten hexafluoride (WF 6 ), tungsten hexachloride (WCl 6 ) and combinations thereof.
17. The method of claim 15 , wherein the hydrogen-containing gas is H 2 .
18. The method of claim 15 , wherein the second purge gas further comprises the nitrogen-containing gas.
19. The method of claim 15 , wherein the nitrogen-containing gas is N 2 .
20. The method of claim 19 , wherein the N 2 gas is less than 1% of the first processing gas.