Vertical Hall Effect element with improved sensitivity

1. A Hall element disposed over a substrate, the Hall element comprising:

an N-type epitaxial layer disposed over the substrate;

a plurality of pickups implanted and diffused into the epitaxial layer, each adjacent pair of the plurality of pickups separated by a respective separation region, each one of the plurality of pickups comprising a respective N+ type diffusion; and

a low-voltage P-well region implanted and diffused into the epitaxial layer, wherein the low-voltage P-well region extends into each one of the separation regions, wherein the low-voltage P-well region extends to a depth of about 0.4 micrometers under surface of the N-type epitaxial layer, wherein a peak doping concentration of the low-voltage P-well region is about 5×10E17 atoms per cubic centimeter at a depth of about 0.1 micrometers under the surface of the N-type epitaxial layer, wherein a spacing (Sp_pkpk) between centers of adjacent pairs of the plurality of pickups is within about +/− ten percent of 3.5 micrometers, wherein the low-voltage P-well region after diffusion does not reach the pickups, wherein the Hall element is configured to generate a Hall voltage between at least one pair of the plurality of pickups, wherein the Hall voltage is most responsive to a magnetic field directed parallel to a major surface of the substrate.

2. The Hall element of claim 1 , wherein the plurality of pickups is arranged in a straight line, forming a vertical Hall Effect element, or in a circle, forming a circular vertical Hall (CVH) sensing element.

3. The Hall element of claim 2 , wherein the Hall element is configured to pass a drive current between at least two of the plurality of pickups, and wherein a depth of the low-voltage P-well region extending into the separation regions is selected to force the drive current deeper and more vertically into the epitaxial layer in relation to the major surface of the substrate, resulting in a more sensitive Hall element.

4. The Hall element of claim 3 , further comprising:

a P-type barrier structure disposed under the epitaxial layer, implanted into the substrate and surrounding the plurality of pickups, wherein the P-type barrier structure is diffused from the substrate into the epitaxial layer; and

a P-well region implanted and diffused into the epitaxial layer and surrounding the plurality of pickups at an upper surface of the epitaxial layer, wherein the P-type barrier structure and the P-well region are coupled in a direction vertical to the substrate so as to form a barrier to electrical charges within the epitaxial layer.

5. The Hall element of claim 4 , wherein a distance (Es_pkep) between an edge of one of the plurality of pickups and a closest edge of the P-well region is within about +/− ten percent of 5.5 micrometers.

6. The Hall element of claim 5 , wherein a smallest distance (Sp_pklp) from an edge of one of the plurality of pickups and a closest edge of the low-voltage P-well region before it is diffused is within about +/− ten percent of 0.4 micrometers.

7. The Hall element of claim 6 , wherein heights (PKH) of the plurality of pickups in a direction parallel to the major surface of the substrate are within about +/− ten percent of 9.0 micrometers.

8. The Hall element of claim 7 , wherein widths (PKW) of the plurality of pickups in a direction parallel to the major surface of the substrate are within about +/− ten percent of 1.0 micrometers.

9. The Hall element of claim 8 , wherein a smallest distance (SP_eppb) from an outer edge of the epi layer and a closest edge of the P-type barrier structure in a direction parallel to the major surface of the substrate before it is diffused is within about +/− ten percent of 5.0 micrometers.

10. The Hall element of claim 9 , wherein a width (EP_width) of the epi layer defined by between opposite edges of the P-well region, is within about +/− ten percent of 20.0 micrometers.

11. The Hall element of claim 10 , wherein the plurality of pickups are arranged in a straight line, forming a vertical Hall Effect element.

12. The Hall element of claim 10 , wherein the plurality of pickups is arranged in a circle, forming a circular vertical Hall (CVH) sensing element.

13. The Hall element of claim 1 wherein a diffusion depth of the low voltage P-well region is less than a diffusion depth of a P-well region in the same semiconductor process.

14. The Hall element of claim 1 wherein the plurality of pickups comprises at least five pickups.

15. A Hall element disposed over a substrate, the Hall element comprising:

an N-type epitaxial layer disposed over the substrate;

a plurality of pickups implanted and diffused into the epitaxial layer, each adjacent pair of the plurality of pickups separated by a respective separation region, each one of the plurality of pickups comprising a respective N+ type diffusion, wherein the plurality of pickups is arranged in a straight line, forming a vertical Hall Effect element, or in a circle, forming a circular vertical Hall (CVH) sensing element; and

a low-voltage P-well region implanted and diffused into the epitaxial layer, wherein the low-voltage P-well region extends into each one of the separation regions, wherein the low voltage P-well extends to a depth of about 0.4 micrometers under surface of the N-type epitaxial layer, wherein a peak doping concentration of the low-voltage P-well region is about 5×10 17 atoms per cubic centimeter at a depth of about 0.1 micrometers under the surface of the N-type epitaxial layer, wherein a spacing (Sp_pkpk) between centers of adjacent pairs of the plurality of pickups is within about +/− ten percent of 3.5 micrometers, wherein the Hall element is configured to generate a Hall voltage between at least one pair of the plurality of pickups, wherein the Hall voltage is most responsive to a magnetic field directed parallel to a major surface of the substrate.

16. The Hall element of claim 15 , wherein the Hall element is configured to pass a drive current between at least two of the plurality of pickups, and wherein a depth of the low-voltage P-well region extending into the separation regions is selected to force the drive current deeper and more vertically into the epitaxial layer in relation to the major surface of the substrate, resulting in a more sensitive Hall element.

17. The Hall element of claim 16 , further comprising:

a P-type barrier structure disposed under the epitaxial layer, implanted into the substrate and surrounding the plurality of pickups, wherein the P-type barrier structure is diffused from the substrate into the epitaxial layer; and

a P-well region implanted and diffused into the epitaxial layer and surrounding the plurality of pickups at an upper surface of the epitaxial layer, wherein the P-type barrier structure and the P-well region are coupled in a direction vertical to the substrate so as to form a barrier to electrical charges within the epitaxial layer.

18. The Hall element of claim 17 , wherein the plurality of pickups are arranged in a straight line, forming a vertical Hall Effect element.

19. The Hall element of claim 17 , wherein the plurality of pickups is arranged in a circle, forming a circular vertical Hall (CVH) sensing element.

20. The Hall element of claim 15 wherein a diffusion depth of the low voltage P-well region is less than a diffusion depth of a P-well region in the same semiconductor process.

21. The Hall element of claim 15 wherein the plurality of pickups comprises at least five pickups.