IP Library › Granted Patent US 9,551,070
Granted Patent B2
US 9,551,070 · App. 14/291,781 · Granted Jan 24, 2017

In-situ corrosion resistant substrate support coating

Inventors: Mei Chang (Saratoga, CA); Chien-Teh Kao (Sunnyvale, CA); Juno Yu-Ting Huang (Santa Clara, CA)
Assignee: APPLIED MATERIALS, INC.
C23C16/45525C23C16/22C23C16/4401C23C16/4581H01J37/32477H01J37/32715
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Quick Facts
Patent No.
US 9,551,070
App. No.
14/291,781
Granted
Jan 24, 2017
Kind
B2
Abstract

Corrosion resistant substrate supports and methods of making corrosion resistant substrate supports are provided herein. In some embodiments, a method of making corrosion resistant substrate supports includes exposing the substrate support disposed within a substrate processing chamber to a process gas comprising an aluminum containing precursor; and depositing an aluminum containing layer atop surfaces of the substrate support.

Claims (16)

1. A method of treating a substrate support, comprising:

exposing the substrate support disposed within a substrate processing chamber to a process gas comprising an aluminum containing precursor;

depositing a first aluminum containing layer atop surfaces of the substrate support;

placing a substrate in the substrate processing chamber and atop the substrate support after depositing the first aluminum containing layer;

exposing the substrate support to chemical precursors having corrosive elements to deposit a layer of material atop the substrate, and resulting in deposition of the layer of material on the substrate support;

performing an in-situ clean of the substrate processing chamber following depositing the layer of material atop the surface of the substrate; and

re-exposing the substrate support disposed within the substrate processing chamber to the process gas to deposit a second aluminum containing layer atop surfaces of the substrate support and atop the material deposited on the substrate support, wherein the second aluminum containing layer is deposited at least one of prior to performing the in-situ clean of the substrate processing chamber or after performing the in-situ clean of the substrate processing chamber.

2. The method of claim 1 , wherein the aluminum containing precursor gas is one of trimethylaluminum, triethylaluminum, tris(diethylamino) aluminum, hexakis (dimethylamido) dialuminum.

3. The method of claim 1 , wherein the process gas further comprises an oxidant.

4. The method of claim 3 , wherein the oxidant is one of an oxygen-containing gas or a nitrogen-containing gas.

5. The method of claim 1 ,

wherein the corrosive element is at least one of a fluorine containing process gas or a chlorine containing process gas.

6. The method of claim 1 , wherein the substrate support comprises a silicon carbide body.

7. The method of claim 1 , further comprising:

depositing a layer of material atop the substrate, wherein depositing the aluminum containing layer and depositing the layer of material are performed at temperatures within about 200 degrees Celsius of each other.

8. The method of claim 1 , further comprising adjusting a temperature of the substrate processing chamber during exposure of the substrate support to the process gas to deposit an aluminum containing layer having one of an amorphous crystal structure or a polycrystalline structure.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 22, 2014
From: CHANG, MEI; KAO, CHIEN-TEH; HUANG, JUNO YU-TING
To: APPLIED MATERIALS, INC.
Reel/Frame 033360/0393 →
Continuity (1)
Related Publication 20150345017A1 · Dec 3, 2015