Organic magnetic field sensor

1. An organic, spin-dependent magnetic field sensor, comprising:

a substrate;

a back contact formed on the substrate;

a back injection layer formed on the back contact as part of an active stack, the injection layer being operable to inject a charge into the active stack;

a back organic semiconductor formed as part of the active stack on the back injection layer, the back organic semiconductor comprising an organic material having a spin-dependence;

a front organic semiconductor formed as part of the active stack on the back organic semiconductor, the front organic semiconductor comprising an organic material having a spin-dependence;

a front injection layer formed on the back contact as part of the active stack, the injection layer being operable to inject a charge into the active stack;

a front contact formed on the front injection layer;

a spin resonance line formed as a magnetic field generator above the front contact for providing an oscillating magnetic field which penetrates the active stack; and

an insulator between the front contact and the back contact, and between the front contact and the spin resonance line for preventing electrical shorts between the front contact, back contact, and spin resonance line;

wherein perturbation of the front and back organic semiconductors modifies at least one of conductivity or luminescence of the front and back organic semiconductors as a result of the spin-dependence.

2. The sensor as in claim 1 , wherein the spin-dependency comprises at least one of: polaron pair recombination or dissociation, triplet-triplet annihilation, triplet-polaron recombination or annihilation, and triplet-trion recombination.

3. The sensor of claim 1 , wherein the magnetic field generator further comprises a lock-in amplifier conductive strip line, wherein each of the spin resonance line and the lock-in amplifier conductive strip line are electrically insulated from one another.

4. The sensor of claim 1 , wherein the magnetic field generator is further configured to produce an offset field parallel to the oscillating magnetic field.

5. The sensor of claim 1 , further comprising a plurality of injection layers in the active stack between the front and back contacts and on either side of the organic material for charge injection into the active stack.

6. The sensor of claim 1 , wherein the front organic semiconductor is closer to the back contact than the front organic semiconductor and the front organic semiconductor is closer to the front contact than the back organic semiconductor.

7. The sensor of claim 1 , wherein the substrate is a flexible substrate and the active stack is supported by the substrate.

8. The sensor of claim 1 , wherein the organic material comprises at least one of polyphenylenevinylene (PPV), polythiophene, polyfluorene-vinylene (PIN), polyfluorene (PM), polyacetylene, polypyrrole, polyaniline, cyano-polyphenylene vinylene (CN-PPV), polyphenylene ethynylene (PPE), poly(2,5 pyridine), poly(3,5 pyridine), poly(2,5-bis(3-sulfonatopropoxy)-1,4-phenylene, disodium salt-alt-1,4-phenylene) (PPP), hydrocarbon molecules, porphyrin, and phthalocyanine.

9. The sensor of claim 1 , wherein the organic material comprises poly[2-methoxy-5-(2-ethyl-hexyloxy)-1,4-phenylene-vinylene] (MEH-PPV).

10. A magnetic field sensor system, comprising at least three organic, spin-dependent magnetic field sensors as claimed in claim 1 , wherein each of the at least three organic, spin-dependent magnetic field sensors includes mutually perpendicular oscillating magnetic fields to form an omni-directional vector magnetometer.

11. A method for identifying a target magnetic field; comprising:

positioning an organic, spin-dependent magnetic field sensor near the magnetic field;

applying an oscillating magnetic field on the magnetic field sensor, wherein the oscillating magnetic field penetrates an active stack of the magnetic field sensor;

sweeping the oscillating magnetic field across a range of magnetic field frequencies;

applying an electrical current through the active stack;

measuring the electrical current while sweeping the oscillating magnetic field across the range of magnetic field frequencies, wherein conductivity of the active stack changes as the oscillating magnetic field changes; and

identifying the target magnetic field when changes to the conductivity of the active stack are the greatest.

12. The method as in claim 11 ; wherein positioning the organic, spin-dependent magnetic field sensor near the magnetic field comprises positioning the organic, spin-dependent magnetic field sensor at any non-parallel angle with respect to a direction of the magnetic field.

13. The method as in claim 11 , further comprising identifying the range of magnetic field frequencies as a subset of a larger range of frequencies using a Hall sensor.

14. The method as in claim 11 , wherein the conductivity of the active stack changes as a frequency of the uniform, oscillating magnetic field approaches a resonance frequency corresponding to the target magnetic field and causes resonance in the organic spin-dependent magnetic field sensor.

15. The method as in claim 11 , further comprising measuring spatially varying target magnetic fields using an array of organic spin-dependent magnetic field sensors.

16. The method as in claim 11 , wherein identifying the target magnetic field comprises calculating a target magnetic field B according to the relationship B=αf, where f is a frequency of the uniform, oscillating magnetic field and a is an organic material constant that is constant in temperature and applied current.

17. The method as in claim 11 , further comprising identifying the target magnetic field at room temperature.

18. The method as in claim 11 , further comprising identifying the target magnetic field at cryogenic temperatures.