Light-emitting device
View Patent ↗A light-emitting device in which variation in luminance among pixels is suppressed. The light-emitting device includes a pixel; a first circuit configured to generate a signal containing information on a value of current extracted from the pixel; and a second circuit configured to correct an image signal in accordance with the signal. The pixel includes a light-emitting element; a transistor for controlling supply of the current to the light-emitting element in accordance with the image signal; a first switch configured to control connection between a gate and a drain of the transistor or between the gate of the transistor and a wiring; and a second switch configured to control extraction of the current from the pixel.
1. A light-emitting device comprising:
a pixel comprising a light-emitting element, a transistor, a first switch, a second switch, a third switch, a fourth switch and a capacitor;
a first circuit configured to generate a signal containing information on a value of current extracted from the pixel;
a second circuit configured to correct an image signal in accordance with the signal;
a first wiring;
a second wiring; and
a third wiring,
wherein the first wiring and a gate of the transistor are electrically connected to each other through the first switch,
wherein the second wiring and a first electrode of the capacitor are electrically connected to each other through the third switch,
wherein a second electrode of the capacitor is electrically connected to a first terminal of the transistor and an anode of the light-emitting element,
wherein the first terminal of the transistor and the third wiring are electrically connected to each other through the second switch, and
wherein the first electrode of the capacitor and the gate of the transistor are electrically connected to each other through the fourth switch.
2. The light-emitting device according to claim 1 , wherein the transistor is an n-channel transistor.
3. The light-emitting device according to claim 2 , wherein the transistor includes a channel formation region in an oxide semiconductor film.
4. The light-emitting device according to claim 1 , wherein the transistor is a first transistor, and wherein the first switch and the second switch each include a second transistor.
5. The light-emitting device according to claim 4 , wherein the second transistor included in each of the first switch and the second switch is an n-channel transistor.
6. The light-emitting device according to claim 5 , wherein the second transistor includes a channel formation region in an oxide semiconductor film.
7. A light-emitting device comprising:
a pixel;
a first circuit configured to generate a signal containing information on a value of current extracted from the pixel;
a second circuit configured to correct an image signal in accordance with the signal;
a first wiring;
a second wiring; and
a third wiring,
wherein the pixel comprises:
a light-emitting element;
a transistor configured to control supply of the current to the light-emitting element in accordance with the image signal;
a first switch configured to control connection between a gate and a drain of the transistor or between the gate of the transistor and the first wiring;
a second switch configured to control extraction of the current from the pixel;
a third switch;
a fourth switch; and
a capacitor,
wherein the first wiring and the gate of the transistor are electrically connected to each other through the first switch,
wherein the second wiring and a first electrode of the capacitor are electrically connected to each other through the third switch,
wherein a second electrode of the capacitor is electrically connected to a first terminal of the transistor and an anode of the light-emitting element,
wherein the first terminal of the transistor and the third wiring are electrically connected to each other through the second switch, and
wherein the first electrode of the capacitor and the gate of the transistor are electrically connected to each other through the fourth switch.
8. The light-emitting device according to claim 7 , wherein the transistor is an n-channel transistor.
9. The light-emitting device according to claim 8 , wherein the transistor includes a channel formation region in an oxide semiconductor film.
10. The light-emitting device according to claim 7 , wherein the transistor is a first transistor, and wherein the first to fourth switches each include a second transistor.
11. The light-emitting device according to claim 10 , wherein the second transistor included in each of the first to fourth switches is an n-channel transistor.
12. The light-emitting device according to claim 11 , wherein the second transistor includes a channel formation region in an oxide semiconductor film.
13. The light-emitting device according to claim 7 , further comprising a fifth switch, wherein the first terminal of the transistor and the anode of the light-emitting element are electrically connected to each other through the fifth switch.
14. A light-emitting device comprising:
a pixel;
a first circuit configured to generate a signal containing information on a value of current extracted from the pixel;
a second circuit configured to correct an image signal in accordance with the signal;
a first wiring;
a second wiring; and
a third wiring,
wherein the pixel comprises:
a light-emitting element;
a transistor configured to control supply of the current to the light-emitting element in accordance with the image signal;
a first switch configured to control connection between a gate and a drain of the transistor or between the gate of the transistor and the first wiring;
a second switch configured to control extraction of the current from the pixel;
a third switch;
a fourth switch;
a first capacitor; and
a second capacitor,
wherein the first wiring and the gate of the transistor are electrically connected to each other through the first switch,
wherein the second wiring and a first electrode of the first capacitor are electrically connected to each other through the third switch,
wherein a second electrode of the second capacitor is electrically connected to a first terminal of the transistor and an anode of the light-emitting element,
wherein the first terminal of the first capacitor and the first terminal of the transistor are electrically connected to each other through the fourth switch,
wherein a first electrode of the second capacitor is electrically connected to the first electrode of the first capacitor, and
wherein the first terminal of the transistor and the third wiring are electrically connected to each other through the second switch.
15. The light-emitting device according to claim 14 , wherein the transistor is an n-channel transistor.
16. The light-emitting device according to claim 15 , wherein the transistor includes a channel formation region in an oxide semiconductor film.
17. The light-emitting device according to claim 14 , wherein the transistor is a first transistor, and wherein the first to fourth switches each include a second transistor.
18. The light-emitting device according to claim 17 , wherein the second transistor included in each of the first to fourth switches is an n-channel transistor.
19. The light-emitting device according to claim 18 , wherein the second transistor includes a channel formation region in an oxide semiconductor film.
20. The light-emitting device according to claim 14 , further comprising a fifth switch, wherein the first terminal of the transistor and the anode of the light-emitting element are electrically connected to each other through the fifth switch.