Sense amplifier driving device and semiconductor device including the same
An embodiment relates to a sense amplifier driving device for stabilizing bit line precharge power when a post-overdriving operation is performed. The sense amplifier driving device includes a power driving unit configured to supply a first pull-up voltage and a pull-down voltage to a pull-up power line and a pull-down power line during a post-overdriving period and a driving signal generation unit configured to generate a pull-up driving signal and a pull-down driving signal activated during the post-overdriving period in order to control the driving of the power driving unit. The driving signal generation unit controls a point of time at which the pull-down driving signal shifts in response to a post-overdriving enable signal.
1. A sense amplifier driving device, comprising:
a power driving unit configured to supply a first pull-up voltage and a pull-down voltage to a pull-up power line and a pull-down power line during a post-overdriving period; and
a driving signal generation unit configured to generate a pull-up driving signal and a pull-down driving signal activated during the post-overdriving period in order to control a driving of the power driving unit, wherein the driving signal generation unit controls a point of time at which the pull-down driving signal shifts in response to a post-overdriving enable signal,
wherein the driving signal generation unit comprises:
a control signal generation unit configured to perform pull-up or pull-down driving on a pull-down pre-signal in response to an active signal and a precharge signal;
a delay unit configured to delay the pull-down pre-signal;
a selection unit configured to select one of the pull-down pre-signal and an output of the delay unit in response to the post-overdriving enable signal; and
a driving unit configured to output the pull-down driving signal by driving the output of the selection unit.
2. The sense amplifier driving device of claim 1 , wherein the post-overdriving period is a certain period of time before a word line of a memory cell is disabled prior to a precharge period.
3. The sense amplifier driving device of claim 1 , wherein the first pull-up voltage comprises a power supply voltage.
4. The sense amplifier driving device of claim 1 , wherein the pull-down voltage comprises a ground voltage.
5. The sense amplifier driving device of claim 1 , wherein the power driving unit supplies, during an active period, the pull-up power line with a second pull-up voltage lower than the first pull-up voltage.
6. The sense amplifier driving device of claim 5 , wherein the second pull-up voltage comprises a core voltage.
7. The sense amplifier driving device of claim 1 , wherein the power driving unit comprises:
a first pull-up driving unit configured to generate the first pull-up voltage when a first pull-up driving signal is activated in an overdriving period and the post-overdriving period;
a second pull-up driving unit configured to supply the pull-up power line with a second pull-up voltage lower than the first pull-up voltage when a second pull-up driving signal is activated in the active period; and
a pull-down driving unit configured to supply the pull-down voltage when the pull-down driving signal is activated in the overdriving period and the post-overdriving period.
8. The sense amplifier driving device of claim 1 , wherein the delay unit delays a falling edge of the pull-down pre-signal in a precharge period.
9. The sense amplifier driving device of claim 1 , wherein the selection unit selects the output of the delay unit when the post-overdriving enable signal is activated and selects the pull-down pre-signal when the post-overdriving enable signal is deactivated.
10. The sense amplifier driving device of claim 1 , wherein the driving signal generation unit is configured to:
delay a falling edge of a pull-down control signal during a delay time of the delay unit when the post-overdriving enable signal is activated, and
deactivate the pull-down control signal in response to the pull-down pre-signal when the post-overdriving enable signal is deactivated in the precharge period.
11. A semiconductor device, comprising:
a sense amplifier configured to sense and amplify data of a memory cell in response to a voltage applied to a pull-up power line and a pull-down power line; and
a sense amplifier driving device configured to supply a first pull-up voltage and a pull-down voltage to the pull-up power line and the pull-down power line during a post-overdriving period, generate a pull-up driving signal and a pull-down driving signal for controlling the first pull-up voltage and the pull-down voltage, and control a point of time at which the pull-down driving signal shifts in response to a post-overdriving enable signal,
wherein the driving signal generation unit comprises:
a control signal generation unit configured to perform pull-up or pull-down driving on a pull-down pre-signal in response to an active signal and a precharge signal;
a delay unit configured to delay the pull-down pre-signal;
a selection unit configured to select one of the pull-down pre-signal and output of the delay unit in response to the post-overdriving enable signal; and
a driving unit configured to output the pull-down driving signal by driving the output of the selection unit.
12. The semiconductor device of claim 11 , wherein the post-overdriving period is a certain period of before a word line of a memory cell is disabled prior to a precharge period.
13. The semiconductor device of claim 11 , wherein the sense amplifier driving device comprises:
a power driving unit configured to supply the first pull-up voltage and the pull-down voltage to the pull-up power line and the pull-down power line during the post-overdriving period; and
a driving signal generation unit configured to generate the first pull-up driving signal and the pull-down driving signal in order to control a driving of the power driving unit and control the point of time at which the pull-down driving signal shifts in response to the post-overdriving enable signal.
14. The semiconductor device of claim 13 , wherein the power driving unit comprises:
a first pull-up driving unit configured to generate the first pull-up voltage when a first pull-up driving signal is activated in an overdriving period and the post-overdriving period;
a second pull-up driving unit configured to supply the pull-up power line with a second pull-up voltage lower than the first pull-up voltage when a second pull-up driving signal is activated in the active period; and
a pull-down driving unit configured to supply the pull-down voltage when the pull-down driving signal is activated in the overdriving period and the post-overdriving period.
15. The semiconductor device of claim 11 , wherein the delay unit delays a falling edge of the pull-down pre-signal in a precharge period.
16. The semiconductor device of claim 11 , wherein the selection unit selects the output of the delay unit when the post-overdriving enable signal is activated and selects the pull-down pre-signal when the post-overdriving enable signal is deactivated.
17. The semiconductor device of claim 11 , wherein the driving signal generation unit is configured to:
delay a falling edge of a pull-down control signal during a delay time of the delay unit when the post-overdriving enable signal is activated, and
deactivate the pull-down control signal in response to the pull-down pre-signal when the post-overdriving enable signal is deactivated in the precharge period.
18. The semiconductor device of claim 11 , wherein:
the first pull-up voltage comprises a power supply voltage, and
the pull-down voltage comprises a ground voltage.