Semiconductor light-emitting element
A semiconductor light-emitting element includes a first semiconductor layer of a first conductive type, a second semiconductor layer of a second conductive type, a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. The second electrode includes an ohmic electrode contacting the second semiconductor layer, and a semiconductor electrode made of a semiconductor layer contacting the ohmic electrode.
1. A method of manufacturing a semiconductor light emitting element, the method comprising:
providing a first stacked-body that includes, in the following order:
a substrate,
a first semiconductor layer of a first conductive type,
a light-emitting layer,
a second semiconductor layer of a second conductive type, and
a first ohmic electrode;
providing a second stacked-body that includes, in the following order:
a supporting substrate,
a semiconductor electrode, and
a second ohmic electrode;
bonding the first ohmic electrode and the second ohmic electrode;
removing the supporting substrate;
removing portions of the semiconductor electrode, the second ohmic electrode, the first ohmic electrode, the second semiconductor layer, the light emitting layer, and the first semiconductor layer, in that order, to expose an electrode forming surface of the first semiconductor layer; and
forming a first pad electrode on the electrode forming surface of the first semiconductor layer, and a second pad electrode on a portion of a surface of the semiconductor electrode.
2. The method of manufacturing a semiconductor light emitting element according to claim 1 , wherein providing the second stacked-body comprises:
growing the semiconductor electrode on a growth substrate,
bonding the supporting substrate on the semiconductor electrode,
removing the growth substrate,
polishing a lower surface of the semiconductor electrode, and
forming the second ohmic electrode on the lower surface of the semiconductor electrode.
3. The method of manufacturing a semiconductor light emitting element according to claim 2 , wherein bonding the first ohmic electrode and the second ohmic electrode comprises a surface activation bonding method or an atomic diffusion bonding method.
4. The method of manufacturing a semiconductor light emitting element according to claim 3 , further comprising planarizing a surface of the first ohmic electrode before bonding the first ohmic electrode and the second ohmic electrode.
5. A method of manufacturing a semiconductor light emitting element, the method comprising:
providing a first stacked-body which includes, in the following order:
a substrate,
a first semiconductor layer of a first conductive type,
a light-emitting layer,
a second semiconductor layer of a second conductive type, and
a first ohmic electrode;
forming a second stacked-body by performing steps comprising:
growing a semiconductor electrode on a growth substrate, and
forming a second ohmic electrode on a surface of the semiconductor electrode; and
bonding the first ohmic electrode and the second ohmic electrode;
removing the growth substrate;
removing portions of the semiconductor electrode, the second ohmic electrode, the first ohmic electrode, the second semiconductor layer, the light emitting layer, and the first semiconductor layer, in that order, to expose an electrode forming surface of the first semiconductor layer; and
forming a first pad electrode on the electrode forming surface of the first semiconductor layer, and a second pad electrode on a portion of a surface of the semiconductor electrode.
6. The method of manufacturing a semiconductor light emitting element according to claim 5 , wherein forming the second stacked-body further comprises:
polishing the surface of the semiconductor electrode before forming the second ohmic electrode.
7. The method of manufacturing a semiconductor light emitting element according to claim 6 , wherein bonding the first ohmic electrode and the second ohmic electrode comprises a surface activation bonding method or an atomic diffusion bonding method.
8. The method of manufacturing a semiconductor light emitting element according to claim 7 further comprising planarizing a surface of the first ohmic electrode before bonding the first ohmic electrode and the second ohmic electrode.
9. A method of manufacturing a semiconductor light emitting element, the method comprising:
providing a first stacked-body that includes, in the following order:
a substrate,
a first semiconductor layer of a first conductive type,
a light-emitting layer,
a second semiconductor layer of a second conductive type, and
a first ohmic electrode;
providing a second stacked-body that includes, in the following order:
a supporting substrate,
a semiconductor electrode, and
a second ohmic electrode;
bonding the first ohmic electrode and the second ohmic electrode; and
removing the supporting substrate,
wherein providing the second stacked-body comprises:
growing the semiconductor electrode on a growth substrate,
bonding the supporting substrate on the semiconductor electrode,
removing the growth substrate,
polishing a lower surface of the semiconductor electrode, and
forming the second ohmic electrode on the lower surface of the semiconductor electrode.
10. The method of manufacturing a semiconductor light emitting element according to claim 9 , wherein bonding the first ohmic electrode and the second ohmic electrode comprises a surface activation bonding method or an atomic diffusion bonding method.
11. The method of manufacturing a semiconductor light emitting element according to claim 10 , further comprising planarizing a surface of the first ohmic electrode before bonding the first ohmic electrode and the second ohmic electrode.