Vibrating device and manufacturing method therfor
A vibrating device having vibrating arms connected to a supporter. The vibrating arms have an n-type Si layer which is a degenerated semiconductor and an exciter provided on the n-type Si layer. The exciter has a piezoelectric thin film and a first and second electrodes with the piezoelectric thin film interposed therebetween.
1. A vibrating device, comprising:
a supporter; and
a vibrating arm connected to the supporter, wherein the vibrating arm has an n-type Si layer which is a degenerated semiconductor and an exciter provided on the n-type Si layer, and
the exciter has a piezoelectric film, and first and second electrodes provided with the piezoelectric film interposed therebetween, the exciter causing bending vibration of the vibrating arm.
2. The vibrating device according to claim 1 , wherein
an odd number of the vibrating arms are connected to the supporter, and
the exciter is configured to cause out-of-plane bending vibration of the odd number of the vibrating arms.
3. The vibrating device according to claim 1 , wherein
an even number of the vibrating arms are connected to the supporter, and
the exciter is configured to cause in-plane bending vibration of the even number of the vibrating arms.
4. The vibrating device according to claim 1 , further comprising:
a mass addition unit provided at a first end of the vibrating arm opposite to a second end of the vibrating arm connected to the supporter.
5. The vibrating device according to claim 1 , further comprising a silicon oxide film between the n-type Si layer and the exciter.
6. The vibrating device according to claim 5 , wherein the silicon oxide film is a thermally oxidized silicon oxide film.
7. A vibrating device, comprising:
a supporter; and
a vibrating arm connected to the supporter, wherein
the vibrating arm has an n-type Si layer having a doping concentration of 1×10 19 /cm 3 or more, and an exciter provided on the n-type Si layer, and
the exciter has a piezoelectric film, and first and second electrodes with the piezoelectric film interposed therebetween, the exciter causing bending vibration of the vibrating arm.
8. The vibrating device according to claim 7 , wherein
an odd number of the vibrating arms are connected to the supporter, and
the exciter is configured to cause out-of-plane bending vibration of the odd number of the vibrating arms.
9. The vibrating device according to claim 7 , wherein
an even number of the vibrating arms are connected to the supporter, and
the exciter is configured to cause in-plane bending vibration of the even number of the vibrating arms.
10. The vibrating device according to claim 7 , further comprising:
a mass addition unit provided at a first end of the vibrating arm opposite to a second end of the vibrating arm connected to the supporter.
11. The vibrating device according to claim 7 , further comprising a silicon oxide film between the n-type Si layer and the exciter.
12. The vibrating device according to claim 11 , wherein the silicon oxide film is a thermally oxidized silicon oxide film.
13. A method for manufacturing a vibrating device, the method comprising:
preparing an n-type Si layer connected to a supporter, the n-type Si layer having an arm portion connected to the supporter;
forming an exciter on the arm portion by:
forming a first electrode on the n-type Si layer;
forming a piezoelectric film on the first electrode; and
forming a second electrode on the piezoelectric film.
14. The method for manufacturing the vibrating device according to claim 13 , wherein
the n-type Si layer is connected to the supporter by:
preparing a support substrate made of Si and having a recess portion on one surface thereof; and
laminating the n-type Si layer over the recess portion of the support substrate.
15. The method for manufacturing the vibrating device according to claim 13 , wherein the n-type Si layer is a degenerated semiconductor.
16. The method for manufacturing the vibrating device according to claim 13 , wherein the n-type Si layer has a doping concentration of 1×10 19 /cm 3 or more.
17. The method for manufacturing the vibrating device according to claim 13 , further comprising:
providing a mass addition unit at a first end of the arm portion opposite to a second end of the arm portion connected to the supporter.
18. The method for manufacturing the vibrating device according to claim 13 , further comprising forming a silicon oxide film between the n-type Si layer and the exciter.
19. The method for manufacturing the vibrating device according to claim 18 , wherein the silicon oxide film is formed by a thermal oxidation method.