Semiconductor devices and methods of manufacturing the same
A semiconductor device includes a substrate including an active fin structure, a plurality of gate structures, a first spacer on sidewalls of each of the gate structures, and a second spacer on sidewalls of the first spacer. The active fin structure may extend in a first direction and including a plurality of active fins with adjacent active fins divided by a recess. Each of the plurality of gate structures may extend in a second direction crossing the first direction, and may cover the active fins. The first spacer may include silicon oxycarbonitride (SiOCN), and may have a first carbon concentration. The second spacer may include SiOCN and may have a second carbon concentration which is different from the first carbon concentration. The semiconductor device may have a low parasitic capacitance and good electrical characteristics.
1. A semiconductor device, comprising:
a substrate including an active fin structure, the active fin structure extending in a first direction and including a plurality of active fins with adjacent active fins divided by a recess;
a plurality of gate structures, each of the plurality of gate structures extending in a second direction crossing the first direction and covering the active fins;
a first spacer on sidewalls of each of the gate structures, the first spacer including silicon oxycarbonitride (SiOCN) and having a first carbon concentration; and
a second spacer on sidewalls of the first spacer, the second spacer including SiOCN and having a second carbon concentration different from the first carbon concentration.
2. The semiconductor device of claim 1 , wherein the first carbon concentration is higher than the second carbon concentration.
3. The semiconductor device of claim 2 , wherein a difference between the first carbon and second carbon concentrations is in a range of about 3% to about 14%.
4. The semiconductor device of claim 1 , wherein the first carbon concentration is in a range of about 4% to about 15%.
5. The semiconductor device of claim 1 , wherein the first spacer has a first nitrogen concentration, and the second spacer has a second nitrogen concentration which is higher than the first nitrogen concentration.
6. The semiconductor device of claim 1 , wherein each of the first and second spacers has an oxygen concentration in a range of about 20% to about 40%.
7. The semiconductor device of claim 1 , wherein oxygen concentrations of the first and second spacers are substantially equal to each other.
8. The semiconductor device of claim 1 , wherein silicon concentrations of the first and second spacers are substantially equal to each other.
9. The semiconductor device of claim 1 , wherein the recess is formed between the second spacers.
10. The semiconductor device of claim 1 , wherein each of the gate structures includes a gate insulation pattern, a gate electrode and a hard mask sequentially stacked, and the gate insulation pattern surrounds sidewalls and a bottom of the gate electrode.
11. The semiconductor device of claim 1 , further comprising an epitaxial pattern in the recess.
12. The semiconductor device of claim 11 , further comprising
an insulating interlayer covering the gate structure and the first and second spacers on the substrate; and
a contact plug penetrating through the insulating interlayer and contacting a portion of the second spacer and a top surface of the epitaxial pattern.
13. A semiconductor device, comprising:
a substrate including an active fin structure, the active fin structure extending in a first direction;
a plurality of gate structures, each of the plurality of gate structures extending in a second direction crossing the first direction;
a first spacer on sidewalls of each of the gate structures, the first spacer including silicon oxycarbonitride (SiOCN) and having a first carbon concentration; and
a second spacer on sidewalls of the first spacer, the second spacer including SiOCN and having a second carbon concentration different from the first carbon concentration.
14. The semiconductor device of claim 13 , wherein the first carbon concentration is higher than the second carbon concentration.
15. The semiconductor device of claim 14 , wherein a difference between the first carbon and second carbon concentrations is in a range of about 3% to about 14%.
16. The semiconductor device of claim 13 , wherein the first carbon concentration is in a range of about 4% to about 15%.
17. The semiconductor device of claim 13 , wherein the first spacer has a first nitrogen concentration, and the second spacer has a second nitrogen concentration which is higher than the first nitrogen concentration.
18. A semiconductor device, comprising:
a substrate including an active fin structure, the active fin structure extending in a first direction;
a plurality of gate structures, each of the plurality of gate structures including a gate insulation pattern, a gate electrode including a metal and a hard mask, and each of the plurality of gate structures extending in a second direction crossing the first direction;
a first spacer on sidewalls of each of the gate structures, the first spacer including silicon oxycarbonitride (SiOCN) and having a first carbon concentration; and
a second spacer on sidewalls of the first spacer, the second spacer including SiOCN and having a second carbon concentration lower than the first carbon concentration.
19. The semiconductor device of claim 18 , wherein the first spacer has a first nitrogen concentration, and the second spacer has a second nitrogen concentration which is higher than the first nitrogen concentration.
20. The semiconductor device of claim 18 , wherein the active fin structure includes a recess between the second spacers, and the semiconductor device further comprises an epitaxial pattern in the recess.