IP Library Granted Patent US 9,559,228
Granted Patent B2
US 9,559,228 · App. 13/250,988 · Granted Jan 31, 2017

Solar cell with doped groove regions separated by ridges

Inventors: Steven Edward Molesa (San Jose, CA); Thomas Pass (San Jose, CA); Steve Kraft (Albany, CA)
Assignee: SunPower Corporation
H01L31/02363H01L31/022441H01L31/0352H01L31/0682H01L31/1804Y02E10/50Y02E10/547Y02P70/521
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Quick Facts
Patent No.
US 9,559,228
App. No.
13/250,988
Granted
Jan 31, 2017
Kind
B2
Abstract

Solar cells with doped groove regions separated by ridges and methods of fabricating solar cells are described. In an example, a solar cell includes a substrate having a surface with a plurality of grooves and ridges. A first doped region of a first conductivity type is disposed in a first of the grooves. A second doped region of a second conductivity type, opposite the first conductivity type, is disposed in a second of the grooves. The first and second grooves are separated by one of the ridges.

Claims (15)

1. A solar cell, comprising:

a substrate having a surface with a plurality of grooves and a plurality of ridges, each of the plurality of grooves having a bottommost surface with a plane parallel with a plane of an uppermost surface of each of the plurality of ridges, wherein the bottommost surface of each of the plurality of grooves is smooth, and wherein the substrate has an undoped or lightly doped region;

a first doped region of the substrate having a concentration of dopants higher than the undoped or lightly doped region of the substrate, the first doped region of a first conductivity type and disposed below the bottommost surface of a first groove of the plurality of grooves; and

a second doped region of the substrate having a concentration of dopants higher than the undoped or lightly doped region of the substrate, the second doped region of a second conductivity type, opposite the first conductivity type, and disposed below the bottommost surface of a second groove of the plurality of grooves, the first and second grooves separated by one of the plurality of ridges,

wherein the first doped region of the substrate extends continuously between the one of the plurality of ridges and a directly adjacent second of the plurality of ridges and is contiguous with the second doped region of the substrate, wherein the first doped region of the substrate only includes dopants of the first conductivity type,

wherein the second doped region of the substrate extends by an amount into the one of the plurality of ridges and wherein the one of the plurality of ridges is entirely filled with the first doped region and the second doped region.

2. The solar cell of claim 1 , wherein the substrate comprises silicon, the first doped region of the substrate only includes n-type dopants for silicon, and the second doped region of the substrate comprises p-type dopants for silicon.

3. A solar cell, comprising:

a substrate having a surface with a plurality of grooves and a plurality of ridges, each of the plurality of grooves having a bottommost surface with a plane parallel with a plane of an uppermost surface of each of the plurality of ridges and wherein the substrate has an undoped or lightly doped region;

a first doped region of the substrate having a concentration of dopants higher than the undoped or lightly doped region of the substrate, the first doped region of a first conductivity type and disposed below the bottommost surface of a first groove of the plurality of grooves; and

a second doped region of the substrate having a concentration of dopants higher than the undoped or lightly doped region of the substrate, the second doped region of a second conductivity type, opposite the first conductivity type, and disposed below the bottommost surface of a second groove of the plurality of grooves, the first and second grooves separated by one of the plurality of ridges,

wherein the first doped region of the substrate extends continuously between the one of the plurality of ridges and a directly adjacent second of the plurality of ridges and is contiguous with the second doped region of the substrate, wherein the first doped region of the substrate only includes dopants of the first conductivity type,

wherein the second doped region of the substrate extends by an amount into the one of the plurality of ridges and wherein the one of the plurality of ridges is entirely filled with the first doped region and the second doped region.

4. The solar cell of claim 3 , wherein the substrate comprises silicon, the first doped region of the substrate only includes n-type dopants for silicon, and the second doped region of the substrate comprises p-type dopants for silicon.

5. The solar cell of claim 3 , wherein the bottommost surface of each of the plurality of grooves is smooth.

Assignments (3)
CONFIRMATORY LICENSE Recorded Jun 4, 2013
From: SUNPOWER CORPORATION
To: ENERGY, UNITED STATES DEPARTMENT OF
Reel/Frame 030612/0713 →
CONFIRMATORY LICENSE Recorded Apr 16, 2013
From: SUNPOWER CORPORATION
To: ENERGY, UNITED STATES DEPARTMENT OF
Reel/Frame 030220/0081 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 14, 2011
From: MOLESA, STEVEN EDWARD; PASS, THOMAS; KRAFT, STEVE
To: SUNPOWER CORPORATION
Reel/Frame 027064/0179 →
Continuity (1)
Related Publication 20130081680A1 · Apr 4, 2013