Micromechanical devices comprising n-type doping agents
The invention concerns a micromechanical device and method of manufacturing thereof. The device comprises an oscillating or deflecting element made of semiconductor material comprising n-type doping agent and excitation or sensing means functionally connected to said oscillating or deflecting element. According to the invention, the oscillating or deflecting element is essentially homogeneously doped with said n-type doping agent. The invention allows for designing a variety of practical resonators having a low temperature drift.
1. A micromechanical bulk acoustic wave (BAW) device comprising
an oscillating or deflecting element which is a resonator element made of semiconductor material comprising n-type doping agent, and
an excitation or sensing means functionally connected to said resonator element and comprising transducer means for exciting a resonance mode to the resonator B element,
wherein the oscillating or deflecting element is essentially homogeneously doped with said n-type doping agent having a doping concentration sufficient to set the temperature coefficient of frequency (TCF) of the resonator to ≧−5 ppm/° C. at 25° C.
2. The micromechanical device according to claim 1 , wherein the oscillating or deflecting element comprises the n-type doping agent in an average concentration of at least 1.0*10 19 cm −3 .
3. The micromechanical device according to claim 1 , wherein the minimum dimension of the oscillating or deflecting element is 5 μm or more.
4. The micromechanical device according to claim 3 , wherein the resonator element is adapted to resonate in a length or width extensional mode or in-plane or out-of plane flexural mode and the concentration of the n-type doping agent at least 1.6*10 19 cm −3 .
5. The micromechanical device according to claim 3 , wherein the resonator element is a beam.
6. The micromechanical device according to claim 5 , wherein the beam is manufactured
on a 100-plane wafer or on a 110-plane wafer, the main axis of the beam being oriented along the [110] direction of the semiconductor material, or
on a 110-plane wafer so that the main axis of the beam is along a direction that is obtained by rotating the beam within the plane by 20 to 50 degrees from the [110] direction towards the [100] direction of the semiconductor material,
and adapted to resonate in a torsional mode.
7. The micromechanical device according to claim 1 , wherein the resonator element is adapted to resonate in a shear mode and the concentration of the n-type doping agent is at least 1.1*10 19 cm −3 .
8. The micromechanical device according to claim 1 , wherein the resonator element is adapted to resonate in a square extensional mode and the concentration of the n-type doping agent is at least 2*10 19 cm −3 .
9. The micromechanical device according to claim 1 , wherein the oscillating or deflecting element comprises a silicon crystal structure and the n-type doping agent is phosphorus, arsenic or antimony.
10. The micromechanical device according to claim 1 , wherein the resonator element is free from pn-junctions.
11. The micromechanical device according to claim 1 , wherein the doping concentration of the n-type doping agent is sufficient to set the temperature coefficient of frequency (TCF) of the resonator element to ≧0 ppm/° C. at 25° C.
12. The micromechanical device according to claim 1 , wherein
the resonator element comprises a body, which can be divided into at least one mass element and at least one spring, and
the resonator element is adapted to resonate in a resonance mode in which one or more springs experience torsion.
13. The micromechanical device according to claim 12 , wherein the orientation of the at least one spring is along the [100] crystal direction.
14. The micromechanical device according to claim 1 , wherein
the resonator element comprises a body, which can be divided into at least one mass element and at least one spring, and
the resonator element is adapted to resonate in a resonance mode in which one or more springs experience flexure and/or extension.
15. The micromechanical device according to claim 1 , wherein the resonator element comprises a plate.
16. The micromechanical device according to claim 15 , wherein the resonator element comprises a plate which can be divided into a plurality of similar subsquares.
17. The micromechanical device according to claim 15 , wherein the resonator element is adapted to resonate in a Lame resonance mode or in a square extensional (SE) resonance mode.
18. The micromechanical device according to claim 15 , wherein the resonator element comprises a rectangular plate manufactured on a 100-plane wafer, the sides of the plate coinciding with the [100] directions of the crystal of the semiconductor material of the resonator element.
19. The micromechanical device according to claim 1 , wherein the resonator element is a first resonator element and wherein the micromechanical device further comprises, at least one second resonator element mechanically coupled with the first resonator element, said first and second resonator elements having different contributions to the overall temperature coefficient of frequency (TCF) of the resonator.
20. The micromechanical device according to claim 1 , wherein the resonator element comprises a homogeneously doped silicon plate or beam having a thickness of at least 4 μm and at least one lateral dimension of at least 50 μm, and the transducer means is adapted to produce a shear, square extensional, width extensional or flexural plate bulk acoustic wave mode or extensional, flexural or torsional beam bulk acoustic wave mode to the resonator element.
21. The micromechanical device according to claim 1 , wherein the resonator element is a beam.
22. A method of manufacturing a micromechanical bulk acoustic wave (BAW) device, comprising the steps of:
providing a semiconductor wafer comprising a homogeneously n-doped device layer,
processing the semiconductor wafer to form a resonator element from the n-doped device layer, the element being capable of deflection or oscillation,
providing excitation or sensing means functionally connected to said resonator element for exciting a resonance mode to the resonator element or sensing the resonance frequency or degree of deflection of the element
wherein the resonator element is doped with a n-type doping agent having a doping concentration sufficient to set the temperature coefficient of frequency (TCF) of the resonator element to ≧−5 ppm/° C. at 25° C.
23. A micromechanical device comprising
an oscillating or deflecting resonator element made of silicon having a crystal orientation that deviates less than 30° from a direction that maximizes the temperature coefficient of frequency of the device, and comprising an n-type doping agent, the resonator element being essentially homogeneously doped with said n-type doping agent, and
excitation or sensing means functionally connected to said resonator element and comprising transducer means for exciting a resonance mode to the resonator element,
wherein the resonator element is adapted to resonate in a shear mode and the concentration of the n-type doping agent is at least 1.1*10 19 cm −3 .
24. The micromechanical device according to claim 23 , wherein the resonator element is free from pn-junctions.
25. The micromechanical device according to claim 23 , wherein the resonator element comprises a plate.
26. The micromechanical device according to claim 25 , wherein the resonator element comprises a plate which can be divided into a plurality of similar subsquares.
27. The micromechanical device according to claim 23 , wherein the resonator element is a first resonator element, the micromechanical device further comprising at least one second resonator element mechanically coupled with the first resonator element, said first and second resonator elements having different contributions to an overall temperature coefficient of frequency (TCF) of the resonator.
28. The micromechanical device according to claim 23 , wherein said deviation of the crystal orientation of said resonator element from said direction that maximizes the temperature coefficient of frequency of the device, is achieved by rotating the resonator element from an optimal direction on the lateral plane of said resonator element.
29. The micromechanical device according to claim 23 , wherein the excitation or sensing means comprise a piezoelectric thin film excitation means or electrostatic excitation means.
30. The micromechanical device according to claim 23 , wherein the device is adapted to be actuated without bias current.
31. The micromechanical device according to claim 23 , wherein the minimum dimension of the oscillating or deflecting element is 5 μm or more.
32. A micromechanical device comprising
an oscillating or deflecting resonator element made of silicon having a crystal orientation that deviates less than 30° from a direction that maximizes the temperature coefficient of frequency of the device, and comprising an n-type doping agent, the resonator element being essentially homogeneously doped with said n-type doping agent, and
excitation or sensing means functionally connected to said resonator element and comprising transducer means for exciting a resonance mode to the resonator element,
wherein the resonator element is adapted to resonate in a square extensional mode and the concentration of the n-type doping agent is at least 2*10 19 cm −3 .
33. The micromechanical device according to claim 32 , wherein the minimum dimension of the oscillating or deflecting element is 5 μm or more.
34. The micromechanical device according to claim 32 , wherein the resonator element is free from pn-junctions.
35. The micromechanical device according to claim 32 , wherein the resonator element comprises a plate.
36. The micromechanical device according to claim 35 , wherein the resonator element comprises a plate which can be divided into a plurality of similar subsquares.
37. The micromechanical device according to claim 32 , wherein the resonator element is a first resonator element, the micromechanical device further comprising at least one second resonator element mechanically coupled with the first resonator element, said first and second resonator elements having different contributions to the overall temperature coefficient of frequency (TCF) of the resonator.
38. The micromechanical device according to claim 32 , wherein said deviation of the crystal orientation of said resonator element from said direction that maximizes the temperature coefficient of frequency of the device, is achieved by rotating the resonator element from the optimal direction on the lateral plane of said resonator element.
39. The micromechanical device according to claim 32 , wherein the excitation or sensing means comprise a piezoelectric thin film excitation means or electrostatic excitation means.
40. The micromechanical device according to claim 32 , wherein the device is adapted to be actuated without bias current.