Group III nitride semiconductor light-emitting device
The present invention provides a Group III nitride semiconductor light-emitting device having a flat semiconductor layer, in which the stress applied to the light-emitting layer is relaxed. The light-emitting layer of the light-emitting device includes a well layer and a barrier layer comprising an AlGaN layer containing In. The light-emitting device has a pit extending from an n-type semiconductor layer to layers above the light-emitting layer. A pit diameter at an interface between the light-emitting layer and the n-type semiconductor layer is 120 nm to 200 nm. The barrier layer has an In concentration of 6.0×10 19 cm −3 .
1. A Group III nitride semiconductor light-emitting device including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer,
wherein the light-emitting layer comprises a multi-quantum well structure which comprises a well layer comprising InGaN and a barrier layer comprising an AlGaN layer containing In,
wherein the barrier layer has an In concentration of 1.0×10 16 cm −3 to 4.5×10 19 cm −3 ,
wherein a pit is provided so as to extend from the n-type semiconductor layer to the p-type semiconductor layer,
wherein the pit diameter D 1 is from 120 nm to 200 nm at an interface between the light-emitting layer and the n-type semiconductor layer, and
wherein a ratio D 2 /D 1 of the pit diameter D 2 at an interface between the light-emitting layer and the p-type semiconductor layer to the pit diameter D 1 at the interface between the light-emitting layer and the n-type semiconductor layer is 1.1 to 1.25.
2. The Group III nitride semiconductor light-emitting device according to claim 1 , wherein the barrier layer has an In concentration of 1.0×10 16 cm −3 to 4.1×10 19 cm −3 .
3. The Group III nitride semiconductor light-emitting device according to claim 2 , wherein the ratio D 2 /D 1 of the pit diameter D 2 at the interface between the light-emitting layer and the p-type semiconductor layer to the pit diameter D 1 at the interface between the light-emitting layer and the n-type semiconductor layer is 1.11 to 1.22.
4. The Group III nitride semiconductor light-emitting device according to claim 3 , wherein the pit diameter D 1 is from 140 nm to 180 nm at the interface between the light-emitting layer and the n-type semiconductor layer.
5. The Group III nitride semiconductor light-emitting device according to claim 2 , wherein the pit diameter D 1 is from 140 nm to 180 nm at the interface between the light-emitting layer and the n-type semiconductor layer.
6. The Group III nitride semiconductor light-emitting device according to claim 1 , wherein the barrier layer has an In concentration of 2.0×10 19 cm −3 to 3.0×10 19 cm −3 .
7. The Group III nitride semiconductor light-emitting device according to claim 6 , wherein the ratio D 2 /D 1 of the pit diameter D 2 at the interface between the light-emitting layer and the p-type semiconductor layer to the pit diameter D 1 at the interface between the light-emitting layer and the n-type semiconductor layer is 1.11 to 1.22.
8. The Group III nitride semiconductor light-emitting device according to claim 6 , wherein the pit diameter D 1 is from 140 nm to 180 nm at the interface between the light-emitting layer and the n-type semiconductor layer.
9. The Group III nitride semiconductor light-emitting device according to claim 1 , wherein the pit diameter D 1 is from 140 nm to 180 nm at the interface between the light-emitting layer and the n-type semiconductor layer.
10. The Group III nitride semiconductor light-emitting device according to claim 9 , wherein the ratio D 2 /D 1 of the pit diameter D 2 at the interface between the light-emitting layer and the p-type semiconductor layer to the pit diameter D 1 at the interface between the light-emitting layer and the n-type semiconductor layer is 1.11 to 1.22.
11. The Group III nitride semiconductor light-emitting device according to claim 10 , wherein the barrier layer has an In concentration of 1.0×10 19 cm −3 to 3.0×10 19 cm −3 .
12. The Group III nitride semiconductor light-emitting device according to claim 10 , wherein the barrier layer has an In concentration of 2.0×10 19 cm −3 to 3.0×10 19 cm −3 .
13. The Group III nitride semiconductor light-emitting device according to claim 9 , wherein the barrier layer has an In concentration of 1.0×10 19 cm −3 to 3.0×10 19 cm −3 .
14. The Group III nitride semiconductor light-emitting device according to claim 1 , wherein the ratio D 2 /D 1 of the pit diameter D 2 at the interface between the light-emitting layer and the p-type semiconductor layer to the pit diameter D 1 at the interface between the light-emitting layer and the n-type semiconductor layer is 1.11 to 1.22.
15. The Group III nitride semiconductor light-emitting device according to claim 14 , wherein the barrier layer has an In concentration of 1.0×10 19 cm −3 to 3.0×10 19 cm −3 .
16. The Group III nitride semiconductor light-emitting device according to claim 1 , wherein the barrier layer has an In concentration of 1.0×10 19 cm −3 to 3.0×10 19 cm −3 .