Monolithic ceramic component of gas delivery system and method of making and use thereof
A method of making a monolithic ceramic component of a gas delivery system of a semiconductor substrate processing apparatus wherein the gas delivery system is configured to supply process gas to a gas distribution member disposed downstream thereof. The gas distribution member is configured to supply the process gas to a processing region of a vacuum chamber of the apparatus, wherein the processing region is disposed above an upper surface of a semiconductor substrate to be processed. The method comprises preparing a green compact of ceramic material. The green compact of ceramic material is formed into a form of a desired monolithic ceramic component of the gas delivery system. The formed green compact of ceramic material is fired to form the monolithic ceramic component of the gas delivery system.
1. A method of making a monolithic ceramic a gas stick usable in a gas delivery system of a semiconductor substrate processing apparatus, the method of making the monolithic ceramic component comprising:
preparing a green compact of ceramic material;
forming the green compact of ceramic material into a form of a desired monolithic ceramic gas stick having a plurality of inlet ports and a plurality of outlet ports and one or more conduits in fluid communication with the inlet and outlet ports, wherein the green compact of ceramic material is formed around a preform having a shape corresponding to an internal cavity structure of the monolithic ceramic gas stick;
removing the preform from the formed green compact of ceramic material by heating the preform to thereby facilitate removal of the preform from the formed green compact of ceramic material; and
firing the formed green compact of ceramic material to form the monolithic ceramic gas stick of the gas delivery system.
2. The method of claim 1 , wherein the firing of the formed green compact of the ceramic material is performed by sintering the formed green compact.
3. The method of claim 1 , wherein the one or more conduits are a plurality of vertical conduits, optional diagonal conduits, and a plurality of horizontal conduits.
4. The method of claim 1 , wherein the green compact of ceramic material is formed from a slurry comprising at least one powder of a ceramic material and a binder.
5. The method of claim 1 , wherein the ceramic material is selected from the group consisting of silicon, silicon carbide (SiC), silicon oxide, silicon nitride, boron carbide, aluminum nitride, titanium oxide, alumina, zirconia, beryllia, and ceria.
6. A method of making a monolithic ceramic mixing manifold of a gas delivery system of a semiconductor substrate processing apparatus, the method comprising:
preparing layers of a green compact of ceramic material;
over layering the green compact of ceramic material layer by layer to form a green compact of ceramic material which corresponds to a form of a desired monolithic ceramic mixing manifold configured to support gas delivery components of a gas stick, the mixing manifold having one or more inlet and outlet ports and one or more conduits in fluid communication with the inlet and outlet ports, wherein each layer of the green compact of ceramic material is patterned such that a plurality of vertical conduits, optional diagonal conduits, and a plurality of horizontal conduits are formed in the formed green compact of ceramic material; and
firing the green compact of ceramic material to form the monolithic ceramic mixing manifold.
7. The method of claim 6 , wherein the firing of the formed green compact of the ceramic material is performed by sintering the formed green compact of ceramic material as each layer is layered.
8. The method of claim 6 , wherein the green compact of ceramic material is formed from a slurry comprising at least one powder of a ceramic material and a binder and the layers are formed by 3-D printing the slurry.
9. The method of claim 6 , wherein the ceramic material is selected from the group consisting of silicon, silicon carbide (SiC), silicon oxide, silicon nitride, boron carbide, aluminum nitride, titanium oxide, alumina, zirconia, beryllia, and ceria.