Method of processing a substrate support assembly
Embodiments of the invention may generally provide a method and apparatus that is used to prepare new and used substrate support assemblies for use in typical semiconductor processing environments. Embodiments of the present invention generally relate to a method of coating a new substrate support assembly or a used substrate support assembly that is being refurbished. The deposited coating may include a surface enhancement and/or protective material that is configured to protect one or more of the components exposed to the processing environment during a semiconductor process. The substrate support assembly may be coated with a protective material and during the coating process, the substrate support assembly is maintained at a temperature that is less than or equal to 150° C. by flowing a coolant through channels formed in a base of the substrate support assembly.
1. A method of forming a protective layer on a work piece, comprising: placing the work piece in a processing volume of a processing chamber, wherein the work piece is a substrate support assembly that includes a substrate support member, a base, cooling tubes coupled to channels formed in the substrate support assembly, and a bonding material coupling the substrate support member and the base; connecting the cooling tubes to the processing chamber; flowing a coolant through the channels in the work piece while the work piece is disposed in the processing volume; forming the protective layer on a surface of the work piece, wherein the protective layer comprises a group IIIB metal, wherein a temperature of the substrate support assembly is maintained at below 150° C., while the coolant is flowing through the channels; disconnecting the cooling tubes from the processing chamber; and removing the work piece from the processing chamber, wherein the work piece is configured to support a substrate in a separate substrate processing chamber.
2. The method of claim 1 , wherein the substrate support member comprises aluminum oxide, aluminum nitride, titanium oxide, titanium nitride or silicon carbide.
3. The method of claim 2 , wherein the base comprises a metal.
4. The method of claim 1 , wherein the bonding material comprises a thermally conductive polymer.
5. The method of claim 1 , wherein the protective layer has a thickness ranging from 0.1 microns to 100 microns.
6. The method of claim 1 , wherein the temperature of the work piece is maintained at below 90° C.
7. The method of claim 1 , wherein the work piece is moved by an actuator assembly while the work piece is connected to a fluid source.
8. The method of claim 1 , wherein the coolant is deionized water at room temperature.
9. A method of forming a work piece, comprising: bonding a substrate support member to a base using a bonding material; planarizing a surface of the substrate support member after the substrate support member has been bonded to the base; and forming a protective layer on the planarized surface, wherein the protective layer comprises a group IIIB metal, wherein the forming the protective layer on the planarized surface comprises: placing the work piece in a processing volume of a processing chamber, wherein the work piece is a substrate support assembly that includes the substrate support member, the base, cooling tubes coupled to channels formed in the substrate support assembly, and the bonding material; connecting the cooling tubes to the processing chamber; flowing a coolant through the channels in the work piece while the work piece is disposed in the processing volume; maintaining a temperature of the work piece at below 150° C. during the forming of the protective layer, while the coolant is flowing through the channels; disconnecting the cooling tubes from the processing chamber; and removing the work piece from the processing chamber, wherein the work piece is configured to support a substrate in a separate substrate processing chamber.
10. The method of claim 9 , wherein the substrate support member comprises aluminum oxide, aluminum nitride, titanium oxide, titanium nitride or silicon carbide.
11. The method of claim 10 , wherein the base comprises a metal.
12. The method of claim 9 , wherein the protective layer has a thickness ranging from 0.1 microns to 100 microns.
13. The method of claim 9 , wherein the temperature of the work piece is maintained at below 90° C.