Multizone control of lamps in a conical lamphead using pyrometers
A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.
1. A substrate processing apparatus, comprising:
a vacuum chamber comprising a transparent dome and a transparent floor, wherein both the transparent dome and the transparent floor are quartz;
a substrate support disposed inside the vacuum chamber, wherein the substrate support is a platter-like member with low thermal mass;
a plurality of thermal lamps arranged in a lamphead and positioned proximate the transparent floor of the vacuum chamber;
a plurality of thermal sensors disposed within the lamphead and oriented to receive thermal radiation from an area proximate the substrate support, wherein the thermal sensors receive thermal radiation through the transparent floor, and wherein the thermal sensors receive thermal radiation emitted by the substrate and transmitted by the substrate support;
a plurality of power supplies coupled to the thermal lamps in relation to the position of the thermal sensors;
a controller that adjusts the power supplies based on input from the thermal sensors; and
a reflector disposed proximate the transparent dome, the reflector and the transparent dome together defining a thermal control space.
2. The substrate processing apparatus of claim 1 , further comprising an inlet for a thermal control fluid disposed through the reflector in fluid communication with the thermal control space, and an outlet for the thermal control fluid disposed through the reflector and in fluid communication with the thermal control space.
3. The substrate processing apparatus of claim 1 , further comprising a thermal sensor disposed proximate the transparent dome.
4. The substrate processing apparatus of claim 3 , wherein the thermal sensor is disposed in the reflector.
5. A substrate processing apparatus, comprising:
a vacuum chamber comprising a transparent dome and a transparent floor;
a substrate support disposed inside the vacuum chamber, wherein the substrate support is a platter-like member with low thermal mass;
a plurality of thermal lamps arranged in a lamphead and positioned proximate the transparent floor of the vacuum chamber;
a plurality of thermal sensors disposed within the lamphead and oriented to receive thermal radiation from an area proximate the substrate support, wherein the thermal sensors receive thermal radiation through the transparent floor, and wherein the thermal sensors receive thermal radiation emitted by the substrate and transmitted by the substrate support;
a plurality of power supplies coupled to the thermal lamps in relation to the position of the thermal sensors;
a controller that adjusts the power supplies based on input from the thermal sensors;
a reflector disposed proximate the transparent dome, the reflector and the transparent dome together defining a thermal control space; and
an inlet for a thermal control fluid disposed through the reflector in fluid communication with the thermal control space, and an outlet for the thermal control fluid disposed through the reflector and in fluid communication with the thermal control space.
6. The substrate processing apparatus of claim 5 , further comprising a thermal sensor disposed proximate the transparent dome.
7. The substrate processing apparatus of claim 6 , wherein the thermal sensor is disposed in the reflector.
8. A substrate processing apparatus, comprising:
a vacuum chamber comprising a transparent dome and a transparent floor;
a substrate support disposed inside the vacuum chamber, wherein the substrate support is a platter-like member with low thermal mass;
a plurality of thermal lamps arranged in a lamphead and positioned proximate the transparent floor of the vacuum chamber;
a plurality of first thermal sensors disposed within the lamphead and oriented to receive thermal radiation from an area proximate the substrate support, wherein the first thermal sensors receive thermal radiation through the transparent floor, and wherein the first thermal sensors receive thermal radiation emitted by the substrate and transmitted by the substrate support;
a plurality of power supplies coupled to the thermal lamps in relation to the position of the first thermal sensors;
a controller that adjusts the power supplies based on input from the first thermal sensors;
a reflector disposed proximate the transparent dome, the reflector and the transparent dome together defining a thermal control space; and
a second thermal sensor disposed proximate the transparent dome.
9. The substrate processing apparatus of claim 8 , wherein the second thermal sensor is disposed in the reflector.