Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD)
Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD) is described. In an example, a method of fabricating a metallization structure for an integrated circuit involves forming an exposed surface above a substrate, the exposed surface including regions of exposed dielectric material and regions of exposed metal. The method also involves forming, using a selective metal deposition process, a metal layer on the regions of exposed metal without forming the metal layer on the regions of exposed dielectric material.
1. A method of fabricating a metallization structure for an integrated circuit, the method comprising:
forming an exposed surface above a substrate, the exposed surface comprising regions of exposed dielectric material and regions of exposed metal; and
forming, using a selective metal deposition process, a metal layer on the regions of exposed metal without forming the metal layer on the regions of exposed dielectric material, wherein forming the metal layer by using the selective metal deposition process comprises forming a molybdenum (Mo) metal layer.
2. The method of claim 1 , wherein forming the metal layer by using the selective metal deposition process comprises using a precursor molecule possessing electron-acceptor ligands on a late transition metal center.
3. The method of claim 2 , wherein using the precursor molecule comprises using an N,N′-dialkyl-diazabutadiene metal precursor complex.
4. The method of claim 3 , wherein the N,N′-dialkyl-diazabutadiene metal precursor complex includes Mo as the late transition metal center.
5. The method of claim 4 , wherein the N,N′-dialkyl-diazabutadiene metal precursor complex has three N,N′-dialkyl-diazabutadiene ligands.
6. The method of claim 1 , wherein forming the metal layer by using the selective metal deposition process comprises forming the metal layer at a temperature approximately in the range of 175-275 degrees Celsius.
7. The method of claim 1 , wherein the exposed dielectric material layer is selected from the group consisting of silicon dioxide and a low-k dielectric material.
8. A method of fabricating a metallization structure for an integrated circuit, the method comprising:
forming a plurality of tungsten (W) contacts in a dielectric layer to provide exposed regions of the dielectric layer and exposed regions of the tungsten contacts; and
forming, using a selective metal atomic layer deposition (ALD) or chemical vapor deposition (CVD) process, a metal layer on the exposed regions of the tungsten contacts without forming the metal layer on the exposed regions of the dielectric layer, wherein the metal layer is a molybdenum (Mo) metal layer.
9. The method of claim 8 , wherein forming the metal layer by using the selective metal ALD or CVD process comprises using an N,N′-dialkyl-diazabutadiene metal precursor complex.
10. The method of claim 9 , wherein the N,N′-dialkyl-diazabutadiene metal precursor complex includes Mo as a metal center, and wherein the N,N′-dialkyl-diazabutadiene metal precursor complex has three N,N′-dialkyl-diazabutadiene ligands.
11. The method of claim 9 , wherein forming the metal layer by using the selective metal ALD or CVD process comprises forming the metal layer at a temperature approximately in the range of 175-275 degrees Celsius.