Focus metrology method and photolithography method and system

1. A focus metrology method, comprising:

recognizing at least one relevant region and at least one irrelevant region within at least one exposure field on a workpiece surface, wherein the relevant region is a region where at least one circuit pattern is to be formed, and the irrelevant region is within the exposure field but outside of the relevant region;

disabling a first portion of a focus metrology tool corresponding to the irrelevant region, such that a second portion of the focus metrology tool remains active;

measuring a height of the relevant region by the second portion of the focus metrology tool; and

determining a focal length for an exposure process based on the measured height of the relevant region without considering the irrelevant region.

2. The focus metrology method of claim 1 , wherein the measuring comprises:

measuring topography of the relevant region.

3. The focus metrology method of claim 1 , wherein the measuring comprises:

directing a wave onto the workpiece surface;

detecting reflected wave from the workpiece surface; and

determining the height of the relevant region based on the reflected wave.

4. The focus metrology method of claim 3 , wherein the wave is an electromagnetic wave.

5. The focus metrology method of claim 1 , wherein the workpiece surface is a surface of a wafer, and the relevant region is a die area; and

wherein the recognizing comprises:

obtaining a position of a scribe region separating a plurality of the die areas on the surface of the wafer; and

recognizing the scribe region as the irrelevant region based on the position of the scribe region.

6. A photolithography method, comprising:

recognizing at least one die area where at least one circuit pattern is to be formed and at least one scribe region surrounding the die area within at least one exposure field on a workpiece surface;

measuring a first distance to the die area and a second distance to the scribe region;

determining a focal length based on the measured first distance to the die area, wherein the measured second distance to the scribe region is ignored when determining the focal length; and

focusing a pattern of light onto the exposure field with the focal length to form the circuit pattern on the die area.

7. The photolithography method of claim 6 , wherein the measuring comprises:

measuring topography of the die area.

8. The photolithography method of claim 6 , wherein the measuring comprises:

directing a wave onto the workpiece surface;

detecting reflected wave from the workpiece surface; and

determining a height of the die area based on the reflected wave.

9. The photolithography method of claim 8 , wherein the wave is an electromagnetic wave.

10. The photolithography method of claim 6 , wherein the workpiece surface is a surface of a wafer; and

wherein the recognizing comprises:

obtaining a position of a scribe region on the surface of the wafer; and

recognizing the scribe region based on the position of the scribe region.

11. A photolithography system, comprising:

a recognizer configured to recognize at least one relevant region where at least one circuit pattern is to be formed and at least one irrelevant region within at least one exposure field on a workpiece surface, wherein the irrelevant region is a region within the exposure field but external to the relevant region;

a focus metrology tool configured to measure a height of the relevant region;

a controller configured to disable a first portion of the focus metrology tool corresponding to the irrelevant region, such that a second portion of the focus metrology tool remains active, control the second portion of the focus metrology tool to measure the height of the relevant region, and determine a focal length based on the measured height of the relevant region; and

an exposure tool configured to focus a pattern of light onto the exposure field with with the focal length to form the circuit pattern on the relevant region.

12. The photolithography system of claim 11 , wherein the focus metrology tool comprises:

a surface metrology tool configured to measure topography of the relevant region.

13. The photolithography system of claim 11 , wherein the focus metrology tool comprises:

a wave source configured to provide a wave onto the workpiece surface;

an imaging module configured to detect reflected wave from the workpiece surface; and

an analyzer configured to determine the height of the relevant region based on the reflected wave.

14. The photolithography system of claim 11 , wherein the workpiece surface is a surface of a wafer; and

wherein the recognizer is further configured to obtain a position of a scribe region separating a plurality as the relevant on the surface of the wafer and recognize the scribe region as the irrelevant region based on the position of the scribe region.

15. The photolithography system of claim 11 , wherein the focus metrology tool comprises:

a wave source configured to provide a wave onto the workpiece surface;

an imaging module configured to detect reflected wave from the workpiece surface, wherein at least a part of the imaging module corresponding to the irrelevant region is capable of being individually disabled; and

an analyzer configured to determine the height of the relevant region based on the reflected wave.

16. The focus metrology method of claim 1 , wherein the relevant region and the irrelevant region are recognized based on at least one pattern of a reticle, and the pattern of the reticle corresponds to the circuit pattern.

17. The focus metrology method of claim 1 , wherein the measuring comprises:

splitting a wave into a first wave and a second wave;

directing the first wave onto the workpiece surface and the second wave onto a reference surface;

recombining reflected waves from the workpiece surface and the reference surface to create an interference wave; and

detecting the interference wave by the second portion of the focus metrology tool.

18. The photolithography method of claim 6 , wherein the die area and the scribe region are recognized based on at least one pattern of a reticle, and the pattern of light is formed by directing light through the reticle.

19. The photolithography system of claim 11 , wherein the focus metrology tool is and interferometer.

20. The photolithography system of claim 11 , wherein the focus metrology tool is a displacement meter.