IP Library Granted Patent US 9,589,519
Granted Patent B2
US 9,589,519 · App. 14/203,272 · Granted Mar 7, 2017

Display panel

Inventors: Jung Hwan Hwang (Cheonan-si, KR); Beom Jun Kim (Seoul, KR); Seong Yeol Syn (Ulsan, KR); Bong-Jun Lee (Seoul, KR); You Mee Hyun (Anyang-si, KR)
Assignee: Samsung Display Co., Ltd.
G09G3/3648G09G3/3677G11C19/28G09G2310/0286
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,589,519
App. No.
14/203,272
Granted
Mar 7, 2017
Kind
B2
Abstract

A display panel is provided. The display panel includes a display area comprising a gate line and a data line, and a gate driver connected to a terminal of the gate line. The gate driver includes a plurality of stages that are integrated on a substrate, and each stage comprises an inverter unit, an output unit, and a Q node stabilization unit. The output unit includes a first transistor and a first capacitor, wherein the first transistor includes an input terminal for receiving a clock signal, a control terminal connected to a node Q, and an output terminal connected to a gate voltage output terminal to output a gate voltage. A Vgs voltage of a transistor in the Q node stabilization unit has a value of equal to or less than 0 V when the output unit outputs a gate-on voltage.

Claims (30)

1. A display panel comprising:

a display area comprising a gate line and a data line; and

a gate driver connected to a terminal of the gate line, wherein the gate driver comprises a plurality of stages that are integrated on a substrate, and at least one of the stages comprises an inverter unit, an output unit, and a carry signal generator,

the output unit comprising a first transistor and a first capacitor, wherein the first transistor includes an input terminal for receiving a clock signal, a control terminal connected to a node Q, and an output terminal connected to a gate voltage output terminal to output a gate voltage at a first low voltage, the inverter unit configured to output voltage-at a second low voltage, the carry signal generator configured to generate a carry signal at a third low voltage and output the carry signal to a transmission signal output terminal connected to a next stage,

wherein the second low voltage has a lower voltage level than the first low voltage, and the third low voltage has a lower voltage level than the second low voltage.

2. The display panel of claim 1 , wherein

each stage further comprises a Q node stabilization unit, and a Vgs voltage of a transistor in the Q node stabilization unit has a value of equal to or less than 0 V when the output unit ouputs a gate-on voltage.

3. The display panel of claim 2 , wherein

the Q node stabilization unit comprises:

a fourth transistor comprising an input terminal and a control terminal for receiving a carry signal of a previous stage through a first input terminal, and an output terminal connected to the node Q;

a sixth transistor comprising a control terminal for receiving a carry signal of a second next stage through a third input terminal, an input terminal connected to the node Q, and an output terminal for receiving the second low voltage;

a ninth transistor comprising a control terminal for receiving a carry signal of a next stage through a second input terminal, an input terminal connected to the node Q, and an output terminal for receiving the second low voltage; and

a tenth transistor comprising a control terminal connected to a node I wherein the node I corresponds to an output of the inverter unit, an input terminal connected to the node Q, and an output terminal for receiving the second low voltage.

4. The display panel of claim 2 , further comprising

a fifth transistor comprising an input terminal connected to a node I wherein the node I corresponds to an output of the inverter unit, a control terminal for receiving a carry signal of a previous stage through a first input terminal, and an output terminal for receiving the second low voltage.

5. The display panel of claim 2 , wherein

a pull-down unit comprises a second transistor and a third transistor for decreasing a voltage of the output terminal of the first transistor of the output unit to the first low voltage.

6. The display panel of claim 5 , wherein

the pull-down unit comprises an eleventh transistor for decreasing a voltage of the carry signal to the third low voltage, and

the eleventh transistor comprises a control terminal connected to a node I wherein the node I corresponds to an output of the inverter unit, an input terminal connected to an output terminal of the carry signal generator, and an output terminal for receiving the third low voltage.

7. The display panel of claim 5 , wherein

the pull-down unit comprises a seventeenth transistor for decreasing a voltage of the carry signal to the third low voltage, and

the seventeenth transistor comprises a control terminal for receiving the carry signal of the next stage through the second input terminal, an input terminal connected to the output terminal of the carry signal generator, and an output terminal for receiving the third low voltage.

8. The display panel of claim 5 , wherein

the pull-down unit further comprises an eleventh-1 transistor for decreasing the oputput terminal to the first low voltage, and

the eleventh-1 transistor comprises a control terminal for receiving an output signal of an inverter of a previous stage, an input terminal connected to the output terminal of the first transistor of the output unit, and an output terminal for receiving the first low voltage.

9. The display panel of claim 5 , wherein

a channel of the transistors comprises an oxide semiconductor or an amorphous semiconductor, and

when a voltage applied to each stage is more than −10 V, either the amorphous semiconductor or the oxide semiconductor is used to form the channel of the transistors, and

when the voltage applied to each stage is less than −10 V, the oxide semiconductor is used to form the channel of the transistors.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 10, 2014
From: HWANG, JUNG HWAN; KIM, BEOM JUN; SYN, SEONG YEOL; LEE, BONG-JUN; HYUN, YOU MEE
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 032397/0439 →
Priority Claims (1)
KR 10-2013-0026849 · Mar 13, 2013 · national
Continuity (1)
Related Publication 20140267214A1 · Sep 18, 2014