Heterogeneous layer device

1. An apparatus comprising:

an N layer comprising an NMOS device having an N channel, source, and drain that are all intersected by a first horizontal axis that is parallel to a substrate;

a P layer comprising a PMOS device having a P channel, source, and drain that are all intersected by a second horizontal axis that is parallel to the substrate;

a first gate, corresponding to the N channel, which intersects the second horizontal axis; and

a second gate, corresponding to the P channel, which intersects the first horizontal axis.

2. The apparatus of claim 1 , wherein the N and P layers comprise first and second materials each selected from the group comprising group IV, III-V, and II-VI.

3. The apparatus of claim 1 , wherein the N and P layers are lattice mismatched with one another.

4. The apparatus of claim 1 , wherein the first gate is directly above and directly below the N channel and the second gate is directly above and directly below the P channel.

5. The apparatus of claim 1 , wherein at least one of the N and P layers includes an organized single crystal lattice with a bottom surface directly contacting a top surface of an oxide and the oxide is between the substrate and the at least one of the N and P layers.

6. The apparatus of claim 1 , wherein at least one of the N and P layers is transferred to the apparatus and not grown on the apparatus.

7. The apparatus of claim 1 comprising a first vertical axis, orthogonal to the substrate, which intersects the first gate and the N channel, and a second vertical axis, orthogonal to the substrate, which intersects the second gate and the P channel.

8. The apparatus of claim 1 , wherein an insulator portion directly contacts both of the N and P layers.

9. An apparatus comprising:

an N layer comprising an NMOS device having an N channel, a first source, and a first drain all intersected by a first vertical axis that is orthogonal to a substrate;

a P layer comprising a PMOS device having a P channel, a second source, and a second drain intersected by a second vertical axis that is parallel to the substrate;

a first gate, surrounding the N channel, directly contacting a first insulation layer;

a second gate, surrounding the P channel, directly contacting a second insulation layer;

a first contact directly contacting the first insulation layer and the P layer; and

a second contact directly contacting the second insulation layer and the N layer.

10. The apparatus of claim 9 , wherein one of the first source and first drain extends above the first insulation layer and another of the first source and first drain extends below the first insulation layer.

11. The apparatus of claim 10 , wherein one of the second source and second drain extends above the second insulation layer and another of the second source and second drain extends below the second insulation layer.

12. The apparatus of claim 9 , wherein (a) at least one of the N and P layers includes first, second, and third sublayers, the second sublayer directly contacting the first and third sublayers, and (b) the second sublayer is unequally doped to at least one of the first and third sublayers.

13. The apparatus of claim 12 , wherein at least one of the N and P channels includes a portion of the second sublayer, at least one of the first and second sources includes a portion of the first sublayer, and at least one of the first and second drains includes a portion of the third sublayer.

14. The apparatus of claim 9 comprising a first horizontal axis, parallel to the substrate, intersecting the N channel and the second contact.

15. The apparatus of claim 14 comprising a second horizontal axis, parallel to the substrate, intersecting the P channel and the first contact.

16. The apparatus of claim 9 , wherein the N and P layers comprise first and second materials each selected from the group comprising group IV, III-V, and II-VI.

17. The apparatus of claim 9 , wherein the N and P layers are lattice mismatched with one another.

18. The apparatus of claim 9 , wherein at least one of the N and P layers includes an organized single crystal lattice with a bottom surface directly contacting a top surface of an oxide and the oxide is between the substrate and the at least one of the N and P layers.

19. The apparatus of claim 9 , wherein at least one of the N and P layers is transferred to the apparatus and not grown on the apparatus.

20. An apparatus comprising:

an N layer comprising an NMOS device having an N channel, a first source, and a first drain that are all intersected by a first horizontal axis that is parallel to a substrate;

a P layer comprising a PMOS device having a P channel, a second source, and a second drain that are all intersected by a second horizontal axis that is parallel to the substrate; and

a first gate, which corresponds to the N channel, intersecting a vertical axis that intersects a second gate, which corresponds to the P channel; and

a first contact directly contacts the first and second drains.

21. The apparatus of claim 20 comprising a second contact, which directly contacts the first source, and a third contact, which directly contacts the second source.

22. The apparatus of claim 21 comprising a vertical axis, orthogonal to the substrate, intersecting the second and third contacts.

23. The apparatus of claim 21 wherein the second and third contacts include materials having unequal workfunctions.

24. The apparatus of claim 21 , wherein the N and P layers are lattice mismatched with one another.

25. The apparatus of claim 21 , wherein the apparatus is an inverter.