Organic light emitting diode device
Disclosed is an organic light emitting diode device fabrication method that includes: preparing a substrate which is defined into a display area and a non-display area; forming a light emission portion, which includes a thin film transistor and an organic light emission layer in the display area, and a pad portion in a part of the non-display area; sequentially forming a sacrificial layer and an encapsulation passivation film throughout the display and non-display areas; and separating the sacrificial layer and the encapsulation passivation film from the pad portion through an irradiation of laser light.
1. An organic light emitting diode device comprising:
a substrate comprising a display area and a non-display area;
a light emission portion in the display area of the substrate, the light emission portion including a first electrode, a light emitting layer on the first electrode, and a second electrode on the light emitting layer;
a pad portion in the non-display area of the substrate;
a sacrificial layer on the second electrode of the light emission portion; and
an encapsulation passivation film over the sacrificial layer,
wherein the pad portion does not contact the sacrificial layer and the encapsulation passivation film, and
wherein the sacrificial layer has a higher absorption rate with respect to an irradiated laser light than the encapsulation passivation film.
2. The organic light emitting diode device of claim 1 , wherein the encapsulation passivation film has a higher transmittance rate with respect to the irradiated laser light than the sacrificial layer.
3. The organic light emitting diode device of claim 1 , wherein the encapsulation passivation film is in physical contact with the sacrificial layer.
4. The organic light emitting diode device of claim 1 , wherein the light emission portion comprises an organic light emission layer.
5. The organic light emitting diode device of claim 1 , wherein a thickness range of the sacrificial layer is 10-500 nm.
6. The organic light emitting diode device of claim 1 , wherein the sacrificial layer includes at least one of amorphous silicon, zinc oxide and tin oxide as a material.
7. The organic light emitting diode device of claim 1 , wherein the sacrificial layer has a thickness so as to provide a constructive interference of light generated by the light emission portion.
8. The organic light emitting diode device of claim 7 , wherein the sacrificial layer has a thickness so as to provide a constructive interference of blue light generated by the light emission portion.
9. The organic light emitting diode device of claim 1 , wherein a band gap energy of the encapsulation passivation film is larger than a band gap energy of the sacrificial layer.
10. The organic light emitting diode device of claim 1 , further comprising an adhesive layer between the encapsulation passivation film and the sacrificial layer.
11. The organic light emitting diode device of claim 1 , wherein the pad portion is electrically connected to one of a driver IC (Integrated circuit) chips and a flexible printed circuit (FPC) board.
12. The organic light emitting diode device of claim 1 , further comprising an upper substrate facing the substrate, wherein the substrate and the upper substrate are combined with each other by a sealing material.
13. The organic light emitting diode device of claim 12 , wherein the pad portion is externally exposed from the upper substrate.
14. An organic light emitting diode device comprising:
a substrate comprising a display area and a non-display area;
a light emission portion in the display area of the substrate;
a pad portion in the non-display area of the substrate;
a sacrificial layer over the light emission portion;
an encapsulation passivation film over the sacrificial layer; and
an adhesive layer between the encapsulation passivation film and the sacrificial layer,
wherein the pad portion does not contact the sacrificial layer and the encapsulation passivation film, and
wherein the sacrificial layer has a higher absorption rate with respect to an irradiated laser light than the encapsulation passivation film.