Systems and methods for eliminating flourine residue in a substrate processing chamber using a plasma-based process
A method for operating a substrate processing chamber includes after performing a process using a fluorine-based gas in the substrate processing chamber: a) during a first predetermined period, supplying a gas mixture to the substrate processing chamber including one or more gases selected from a group consisting of molecular oxygen, molecular nitrogen, nitric oxide and nitrous oxide and supplying RF power to strike plasma in the substrate processing chamber; b) during a second predetermined period after the first predetermined period, supplying molecular hydrogen gas and RF power to the substrate processing chamber; c) repeating a) and b) one or more times; d) purging the substrate processing chamber with molecular nitrogen gas; e) increasing chamber pressure; f) evacuating the substrate processing chamber; and g) repeating d), e) and f) one or more times.
1. A method for operating a substrate processing chamber, comprising:
after performing a process using a fluorine-based gas in the substrate processing chamber:
a) during a first predetermined period, supplying a gas mixture to the substrate processing chamber including one or more gases selected from the group consisting of molecular oxygen, molecular nitrogen, nitric oxide and nitrous oxide and supplying RF power to strike plasma in the substrate processing chamber;
b) during a second predetermined period after the first predetermined period, supplying molecular hydrogen gas and RF power to the substrate processing chamber;
c) repeating a) and b) one or more times;
d) purging the substrate processing chamber with molecular nitrogen gas;
e) increasing chamber pressure;
f) evacuating the substrate processing chamber; and
g) repeating d), e) and f) one or more times.
2. The method of claim 1 , further comprising setting a pressure in the substrate processing chamber to a first predetermined pressure during a).
3. The method of claim 2 wherein the first predetermined pressure is in a range from 400 mTorr to 3 Torr.
4. The method of claim 2 , further comprising setting the pressure in the substrate processing chamber to a second predetermined pressure during b).
5. The method of claim 4 , wherein the second predetermined pressure is in a range from 400 mTorr and 3 Torr.
6. The method of claim 4 , further comprising setting the pressure in the substrate processing chamber to a third predetermined pressure during c).
7. The method of claim 6 , wherein the third predetermined pressure is in a range from 5 Torr and 15 Torr.
8. The method of claim 1 , wherein the RF power in a) is in a range from 500 W to 2 kW.
9. The method of claim 1 , further comprising supplying an RF bias to a substrate support arranged in the substrate processing chamber.
10. The method of claim 9 , wherein the RF bias is in a power range from 100 W to 500 W.
11. The method of claim 1 , wherein the one or more gases are supplied at a flow rate between 100 and 5000 sccm.
12. The method of claim 1 , wherein the molecular hydrogen is supplied at a flow rate between 500 and 3000 sccm.