Dummy metal gate structures to reduce dishing during chemical-mechanical polishing
The described embodiments of mechanisms for placing dummy gate structures next to and/or near a number of wide gate structures reduce dishing effect for gate structures during chemical-mechanical polishing of gate layers. The arrangements of dummy gate structures and the ranges of metal pattern density have been described. Wide gate structures, such as analog devices, can greatly benefit from the reduction of dishing effect.
1. A device comprising:
a first active gate structure and a second active gate structure over an active area, the first active gate structure and the second active gate structure extending beyond a perimeter of the active area, wherein no additional active structures are interposed between the first active gate structure and the second active gate structure, wherein the first active gate structure is spaced apart from an edge of the active area, and wherein the first active gate structure is a nearest active gate structure to the edge of the active area; and
a plurality of dummy gate structures over the active area, a first subset of the plurality of dummy gate structures being interposed between the first active gate structure and the second active gate structure, a second subset of the plurality of dummy gate structures being interposed between the edge of the active area and the first active gate structure, a number of dummy gate structures in the first subset of the plurality of dummy gate structures being greater than a number of dummy gate structures in the second subset of the plurality of dummy gate structures, the plurality of dummy gate structures being completely within the perimeter of the active area in a plan view.
2. The device of claim 1 , wherein the first active gate structure and the second active gate structure have a first width and the plurality of dummy gate structures have a second width, the second width being different from the first width.
3. The device of claim 2 , wherein a ratio of the first width to the second width is between about 5 and about 100.
4. The device of claim 1 , wherein the first active gate structure comprises:
a first u-shaped gate dielectric layer;
a first u-shaped work function metal layer on the first u-shaped gate dielectric layer; and
a first metal fill layer on the first u-shaped metal work function layer.
5. The device of claim 4 , wherein each of the plurality of dummy gate structures comprises:
a second u-shaped gate dielectric layer;
a second u-shaped work function metal layer on the second u-shaped gate dielectric layer; and
a second metal fill layer on the second u-shaped metal work function layer.
6. The device of claim 1 , wherein a long edge of the first active gate structure is parallel to a long edge of each of the plurality of dummy gate structures.
7. The device of claim 1 , wherein a short edge of the first active gate structure is parallel to a short edge of each of the plurality of dummy gate structures.
8. The device of claim 1 , wherein a long edge of the first active gate structure is parallel to a long edge of the second active gate structure.
9. A device comprising:
a first active gate structure and a second active gate structure over an active area, the first active gate structure and the second active gate structure having a first length; and
a first dummy gate structure and a second dummy gate structure over the active area, the first dummy gate structure and the second dummy gate structure having a second length, the second length being different from the first length, the first dummy gate structure and second dummy gate structure being interposed between the first active gate structure and the second active gate structure such that no other active gate structure is interposed between the first dummy gate structure and the second dummy gate structure, wherein a shortest distance between the first dummy gate structure and the second dummy gate structure is less than a first shortest distance between the first dummy gate structure and a nearest active gate to the first dummy gate structure and a second shortest distance between the second dummy gate structure and a nearest active gate structure to the second dummy gate structure.
10. The device of claim 9 , wherein the first active gate structure and the second active gate structure have a first width, and wherein the first dummy gate structure and the first dummy gate structure have a second width, the first width being greater than the second width.
11. The device of claim 10 , wherein a ratio of the first width to the second width is between about 5 and about 100.
12. The device of claim 9 , wherein the first active gate structure and the second active gate structure extend beyond an edge of the active area.
13. The device of claim 12 , wherein the first dummy gate structure and the second dummy gate structure extend beyond the edge of the active area.
14. The device of claim 9 , wherein the first active gate structure comprises:
a first interfacial layer;
a first u-shaped gate dielectric layer on the first interfacial layer;
a first u-shaped work function metal layer on the first u-shaped gate dielectric layer; and
a first metal fill layer on the first u-shaped metal work function layer.
15. The device of claim 9 , further comprising a third dummy gate structure over the active area, the first active gate structure being interposed between the first dummy gate structure and the third dummy gate structure.
16. A device comprising:
a first active gate structure and a second active gate structure over a diffusion region, the diffusion region having a uniform width; and
a first dummy gate structure over the diffusion region, the first dummy gate structure being interposed between the first active gate structure and the second active gate structure, the first dummy gate structure having first end regions and a first intermediate region interposed between the first end regions, the first end regions having a first width greater than a second width of the first intermediate region, the first end regions extending beyond a perimeter of the diffusion region, wherein a length of the first active gate structure and the second active gate structure is greater than a length of the first dummy gate structure.
17. The device of claim 16 , further comprising a second dummy gate structure over the diffusion region, the first active gate structure being interposed between the first dummy gate structure and the second dummy gate structure, the second dummy gate structure having second end regions and a second intermediate region interposed between the second end regions, the second end regions having a third width greater than a fourth width of the second intermediate region, the second end regions extending beyond the perimeter of the diffusion region.
18. The device of claim 16 , wherein a width of the first active gate structure and the second active gate structure is greater than a width of the first end regions.
19. The device of claim 16 , wherein the first dummy gate structure comprises:
a first interfacial layer;
a first u-shaped gate dielectric layer on the first interfacial layer;
a first u-shaped work function metal layer on the first u-shaped gate dielectric layer; and
a first metal fill layer on the first u-shaped metal work function layer.
20. The device of claim 16 , wherein the uniform width of the diffusion region is less than the length of the first active gate structure and the second active gate structure.