Growth of semiconductors on hetero-substrates using graphene as an interfacial layer
Graphene is used as an interfacial layer to grow Si and other semiconductors or crystalline materials including two-dimensional Si and other structures on any foreign substrate that can withstand the growth temperature without the limitation matching condition typically required for epitaxial growth.
1. An electronic device, comprising:
a substrate;
a defect-free graphene layer deposited on the substrate; and
a semiconductor material deposited on the graphene layer so that epitaxial layers of the semiconductor material grow on the defect-free graphene layer.
2. The electronic device as in claim 1 , wherein the graphene layer consists of a single atomic layer of carbon.
3. The electronic device as in claim 1 , wherein the graphene layer comprises a plurality of layers of graphene.
4. The electronic device as in claim 1 , wherein the substrate comprises one of a SiO 2 /Si substrate, a glass substrate, a metal substrate, or a ceramic substrate.
5. The electronic device as in claim 1 , wherein the substrate comprises a graphite substrate.
6. The electronic device as in claim 1 , wherein the semiconductor material comprises silicon.
7. The electronic device as in claim 1 , wherein the semiconductor material comprises silicene.
8. The electronic device as in claim 1 , wherein the substrate is one that can withstand a growth temperature without a limitation matching condition required for epitaxial growth.
9. The electronic device as in claim 1 , wherein the semiconductor material comprises a crystalline material.
10. The electronic device as in claim 9 , wherein the crystalline material has a 2-dimensional Si structure.
11. A method of growing semiconductors on hetero-substrates using graphene as an interfacial layer, the method comprising:
providing a substrate;
depositing a defect-free graphene layer on the substrate; and
depositing, using one of e-beam evaporation, molecular beam epitaxy or atomic layer deposition, a silicon epitaxial layer on the graphene layer so that the silicon epitaxial layer grows on the defect-free graphene layer.
12. The method of claim 11 , further comprising providing liquid nitrogen in walls of a growth chamber during deposition of the silicon epitaxial layer on the graphene layer.
13. The method of claim 11 , further comprising rotating the substrate during the depositing the graphene layer.
14. The method of claim 11 , further comprising heating the substrate to a predetermined temperature so that absorbed Si atoms nucleate and grow into a uniformly crystalized atomic structure.
15. The method of claim 14 , wherein the predetermined temperature is 700 degrees Celsius.
16. The method of claim 11 , wherein the substrate comprises SiO 2 /Si substrate.
17. The method of claim 11 , wherein the substrate comprises one of a glass substrate, a metal substrate, or a ceramic substrate.
18. The method of claim 11 , wherein the substrate is 300 nm in thickness.
19. A method comprising:
providing a substrate;
transferring a defect-free graphene layer on the substrate; and
depositing, using one of e-beam evaporation, molecular beam epitaxy or atomic layer deposition, a silicon epitaxial layer on the graphene layer so that the silicon epitaxial layer grows on the defect-free graphene layer.
20. The method of claim 19 , wherein the substrate comprises one of a SiO 2 /Si substrate or quartz substrate.