Thermoelectric conversion element and method for manufacturing same
The present invention relates to a thermoelectric conversion element and a method for manufacturing the same and relates to suppression of breakage and deterioration of the thermoelectric conversion element due to partial pressurization from the vertical direction. This thermoelectric conversion element has: at least one n-type semiconductor body; at least one p-type semiconductor body; a first connecting electrode; a first out-put electrode for n-side output; and a second output electrode for p-side output, wherein areas of respective joint sections of the n-type semiconductor body with the first connecting electrode, the first output electrode, and the second output electrode and of the p-type semiconductor body with the first connecting electrode, the first output electrode, and the second output electrode are greater than respective cross-sectional areas in other positions, in an axial direction, of the n-type semiconductor body and the p-type semiconductor body.
1. A thermoelectric conversion element comprising:
at least one n-type semiconductor material structural body;
at least one p-type semiconductor material structural body;
discal anchor sections having thickness of 1 μm to 10 μm on an upper bottom surface and a lower bottom surface of the n-type semiconductor material structural body;
discal anchor sections having thickness of 1 μm to 10 μm on an upper bottom surface and a lower bottom surface of the p-type semiconductor material structural body;
a protecting section between the n-type semiconductor material structural body and the p-type semiconductor material structural body;
a first connecting electrode connected in series to a first discal anchor section of the n-type semiconductor material structural body and a first discal anchor section of the p-type semiconductor material structural body;
a first output electrode for an n-side output connected to a second discal anchor section of the n-type semiconductor material structural body; and
a second output electrode for a p-side output connected to a second discal anchor section of the p-type semiconductor material structural body, wherein
areas of respective joint sections of the n-type semiconductor material structural body with the first discal anchor section and the second discal anchor section and of the p-type semiconductor material structural body with the first discal anchor section and the second discal anchor section are greater than respective cross-sectional areas in other positions, in an axial direction, of the n-type semiconductor material structural body and the p-type semiconductor material structural body;
a long diameter for a minimum portion of each of the n-type semiconductor material structural body and the p-type semiconductor material structural body in the axial direction is 5 μm to 100 μm; and
cross-sectional shapes of the n-type semiconductor material structural body and the p-type semiconductor material structural body along the axial direction are each a drum shape that gradually tapers in a direction from each of the first and second discal anchor sections toward the minimum portion of the p-type and n-type semiconductor material structural body,
wherein the discal anchor sections have a plurality of radial protrusions projecting in a radial direction.
2. The thermoelectric conversion element according to claim 1 , wherein
the n-type semiconductor material structural body and the p-type semiconductor material structural body are both provided in plurality, the number of the n-type semiconductor material structural bodies being the same as that of the p-type semiconductor material structural bodies,
the thermoelectric conversion element includes a second connecting electrode connected in series to the second discal anchor section of one of the n-type semiconductor material structural body that is provided in plurality and the second discal anchor section of one of the p-type semiconductor material structural body that is provided in plurality to connect the one of the n-type semiconductor material structural body and the one of the p-type semiconductor material structural body in series.
3. The thermoelectric conversion element according to claim 1 , wherein a width of the n-type semiconductor material structural body or the p-type semiconductor material structural body is 1 μm to 20 μm greater than its minimum portion in the axial direction on the upper-and-lower surface of the n-type semiconductor material structural body or the p-type semiconductor material structural body.
4. The thermoelectric conversion element according to claim 1 , wherein expansion of the n-type semiconductor material structural body or the p-type semiconductor material structural body is at least 1% to 100% greater than the minimum portion in the axial direction on the upper-and- lower surface of the n-type semiconductor material structural body or the p-type semiconductor material structural body.
5. The thermoelectric conversion element according to claim 1 , wherein a sidewall angle of the drum shape is 1 degree to 5 degrees.
6. The thermoelectric conversion element according to claim 1 , wherein the protecting section is a material having higher electric resistivity and higher thermal resistivity than any of the n-type semiconductor material structural body and the p-type semiconductor material structural body.
7. The thermoelectric conversion element according to claim 6 , wherein the protecting section is photosensitive glass.