Semiconductor device and measurement method
The present invention provides a semiconductor device and a measurement method that enables high precision measurement of temperature or humidity or the like over a wide range. A semiconductor device of the present invention determines which is faster out of a reference oscillation and a thermistor oscillation, and using the faster oscillation as a reference, measures a count value based on the other oscillation. Moreover, the count based on the faster oscillation is employed as a reference value, and a count value based on the other oscillation when the reference value is taken as a measurement value. A frequency ratio is computed based on the reference value and the measurement value, and based on the computed frequency ratio, a table expressing correspondence relationships between frequency ratio and temperature is referred to and a temperature acquired.
1. A semiconductor device comprising:
a first counter that performs a count operation based on a signal of a first frequency;
a second counter that performs a count operation based on a signal of a second frequency; and
a control section that determines a higher frequency out of the first frequency or the second frequency based on a count value of the first counter and a count value of the second counter, measures the other frequency and computes a frequency ratio by using the higher frequency as a reference, and acquires a measurement value by referring to a specific table expressing correspondence relationships between the frequency ratio and the measurement values,
wherein the specific table includes a first region stored with ratios of the second frequency with respect to the first frequency, and a second region stored with ratios of the first frequency with respect to the second frequency, and
frequency ratios are stored in the first region for cases in which the first frequency is lower than a value of a sum of the second frequency plus a specific permissible value, and frequency ratios are stored in the second region for cases in which the first frequency is greater than a value of the second frequency from which a specific permissible value has been subtracted.
2. The semiconductor device of claim 1 , wherein the control section computes a frequency ratio according to the specific table, either based on a ratio of a first count value, the first count value counted by one counter that performs the count operation based on the signal that has the higher frequency, with respect to a second count value counted by the other counter, or based on a ratio of the second count value with respect to the first count value.
3. The semiconductor device of claim 1 , wherein the control section refers to the first region when the first frequency is higher, and refers to the second region when the second frequency is higher.
4. The semiconductor device of claim 1 , wherein,
the first counter or the second counter transmits a specific notification to the control section, and
the control section, on receipt of the notification, determines which out of the first counter or the second counter has made the notification, and stops the count of the counter that has not transmitted the notification.
5. The semiconductor device of claim 1 , wherein the first frequency is a frequency of oscillation based on a reference resistor element and a capacitor element, and the second frequency is a frequency of oscillation based on a sensor element that changes its resistance value depending on environment and the capacitor element.
6. The semiconductor device of claim 1 , further comprising:
a first capacitor element with one end connected to ground;
a reference resistor element with one end connected to the other end of the first capacitor element;
a second capacitor element with one end connected to the other end of the first capacitor element;
a first inverter with an input side connected to the other end of the first capacitor element;
a second inverter with an input side connected to an output side of the first inverter;
a third inverter with an input side connected to an output side of the second inverter, and with an output side connected to the other end of the reference resistor element;
a fourth inverter with an input side connected to the output side of the first inverter, and with an output side connected to the other end of the second capacitor element; and
a sensor inverter with an input side connected to the output side of the second inverter and an output side connected to the other end of the first capacitor element, and whose output changes depending on environment,
wherein the first frequency is a frequency of an oscillation based on the reference resistor element, the first capacitor element and the second capacitor element, and the second frequency is a frequency of an oscillation based on the sensor inverter, the first capacitor element and the second capacitor element.
7. The semiconductor device of claim 6 , wherein the sensor inverter includes a bias circuit that generates a bias voltage that changes depending on environment, and an inverter that is applied with the bias voltage supplied from the bias circuit.
8. A semiconductor device comprising:
a first counter that performs a count operation based on a clock signal;
a second counter that performs a count operation based on a signal of a first frequency and a signal of a second frequency; and
a control section that determines a higher frequency out of the first frequency or the second frequency based on a count value of the first counter, a count value of the second counter that counts based on the signal of the first frequency, and a count value of the second counter that counts based on the signal of the second frequency, computes a frequency ratio by measuring the clock signal using the higher frequency as a reference, based on a measurement result of measuring the lower frequency using the clock signal as a reference, and acquires a measurement value by referring to a specific table expressing correspondence relationships between the frequency ratio and the measurement values.
9. The semiconductor device of claim 8 , wherein the control section computes a frequency ratio expressing a ratio of the second frequency with respect to the first frequency when the first frequency is the higher frequency, and computes a frequency ratio expressing a ratio of the first frequency with respect to the second frequency when the second frequency is the higher frequency.
10. The semiconductor device of claim 8 , wherein the first frequency is a frequency of oscillation based on a reference resistor element and a capacitor element, and the second frequency is a frequency of oscillation based on a sensor element that changes its resistance value depending on environment and the capacitor element.
11. The semiconductor device of claim 8 , further comprising:
a first capacitor element with one end connected to ground;
a reference resistor element with one end connected to the other end of the first capacitor element;
a second capacitor element with one end connected to the other end of the first capacitor element;
a first inverter with an input side connected to the other end of the first capacitor element;
a second inverter with an input side connected to an output side of the first inverter;
a third inverter with an input side connected to an output side of the second inverter, and with an output side connected to the other end of the reference resistor element;
a fourth inverter with an input side connected to the output side of the first inverter, and with an output side connected to the other end of the second capacitor element; and
a sensor inverter with an input side connected to the output side of the second inverter and an output side connected to the other end of the first capacitor element, and whose output changes depending on its environment,
wherein the first frequency is a frequency of an oscillation based on the reference resistor element, the first capacitor element and the second capacitor element, and the second frequency is a frequency of an oscillation based on the sensor inverter, the first capacitor element and the second capacitor element.
12. The semiconductor device of claim 11 , wherein the sensor inverter includes a bias circuit that generates a bias voltage that changes depending on environment, and an inverter that is applied with the bias voltage supplied from the bias circuit.
13. A measurement method performed by a semiconductor device that includes a first counter that performs a count operation based on a signal of a first frequency and a second counter that performs a count operation based on a signal of a second frequency, the measurement method comprising:
determining a higher frequency out of the first frequency or the second frequency based on a count value of the first counter and a count value of the second counter, measuring the other frequency with the higher frequency as a reference, and computing a frequency ratio, and
acquiring a measurement value by referring to a specific table expressing correspondence relationships between the frequency ratio and the measurement values
wherein the specific table includes a first region stored with ratios of the second frequency with respect to the first frequency, and a second region stored with ratios of the first frequency with respect to the second frequency, and
frequency ratios are stored in the first region for cases in which the first frequency is lower than a value of a sum of the second frequency plus a specific permissible value, and frequency ratios are stored in the second region for cases in which the first frequency is greater than a value of the second frequency from which a specific permissible value has been subtracted.
14. A measurement method performed by a semiconductor device that includes a first counter that performs a count operation based on a clock signal, a second counter that performs a count operation based on a signal of a first frequency and a signal of a second frequency, the measurement method comprising:
determining a higher frequency out of the first frequency or the second frequency based on a count value of the first counter, a count value of the second counter counted based on the signal of the first frequency, and a count value of the second counter counted based on the signal of the second frequency,
computing a frequency ratio by measuring the clock signal using the higher frequency as a reference, based on a measurement result of measuring the lower frequency using the clock signal as a reference, and
acquiring a measurement value by referring to a specific table expressing correspondence relationships between the frequency ratio and the measurement values.