Electronic device having a thermal conductor made of silver between a heat sink and an electronic element, and fabrication method thereof
An electronic device is provided, which includes an electronic element and a heat dissipating element disposed on the electronic element through a thermal conductor, wherein a width of the thermal conductor is smaller than a width of the electronic element. The thermal conductor includes silver to thereby greatly increase the thermal conductivity of the thermal conductor and hence improve the thermal conduction efficiency of the electronic device.
1. An electronic device, comprising:
an electronic element;
a thermal conductor formed on the electronic element and having a width smaller than a width of the electronic element; and
a heat dissipating element disposed on the thermal conductor,
wherein the thermal conductor comprises a first metal layer bonded to the electronic element, a second metal layer bonded to the heat dissipating element, and a sintered silver layer having a plurality of polymer particles sandwiched between the first metal layer and the second metal layer.
2. The electronic device of claim 1 , wherein the electronic element is an active element, a passive element, a package element or a combination thereof.
3. The electronic device of claim 1 , wherein the thermal conductor comprises a plurality of polymer particles having a diameter less than or equal to 20 um.
4. The electronic device of claim 1 , wherein the first metal layer is made of Ti, Ti/Cu or Ti/Ni, Ti/Ag, Ti/Cu/Ag, or Ti/Ni/Ag.
5. The electronic device of claim 4 , wherein the silver layer of the first metal layer has a thickness greater than or equal to 200 nm.
6. The electronic device of claim 1 , wherein the second metal layer is made of Ag or Ni/Ag.
7. The electronic device of claim 6 , wherein the silver layer of the second metal layer has a thickness greater than or equal to 200 nm.
8. The electronic device of claim 1 , wherein the first metal layer is a sputtered layer.
9. The electronic device of claim 1 , wherein the second metal layer is a sputtered layer.
10. The electronic device of claim 1 , wherein the electronic element has an active surface and an inactive surface opposite to the active surface, and the thermal conductor is disposed on a portion of the inactive surface.
11. The electronic device of claim 10 , wherein a contact area of the thermal conductor with the inactive surface is smaller than 80% of an area of the inactive surface.
12. The electronic device of claim 10 , the heat dissipating element has a first surface and a second surface opposite to the first surface, and the thermal conductor is disposed on a portion of the first surface or the entire first surface.
13. The electronic device of claim 12 , wherein the thermal conductor is disposed on a portion of the first surface, and a contact area of the thermal conductor with the first surface is smaller than 80% of a projection area of the first surface with respect to the inactive surface.
14. The electronic device of claim 1 , further comprising an insulating material formed on the heat dissipating element and encapsulating the thermal conductor, or the thermal conductor and the electronic element.
15. A method for fabricating an electronic device, comprising the steps of:
providing an electronic element; and
disposing a heat dissipating element on the electronic element through a thermal conductor, wherein the thermal conductor has a width smaller than a width of the electronic element and comprises a first metal layer bonded to the electronic element, a second metal layer bonded to the heat dissipating element, and a sintered silver layer having a plurality of polymer particles sandwiched between the first metal layer and the second metal layer.
16. The method of claim 15 , wherein the electronic element is an active element, a passive element, a package element or a combination thereof.
17. The method of claim 15 , wherein the thermal conductor comprises a plurality of polymer particles having a diameter less than or equal to 20 um.
18. The method of claim 15 , wherein the first metal layer is made of Ti, Ti/Cu or Ti/Ni, Ti/Ag, Ti/Cu/Ag, or Ti/Ni/Ag.
19. The method of claim 18 , wherein the silver layer of the first metal layer has a thickness greater than or equal to 200 nm.
20. The method of claim 15 , wherein the second metal layer is made of Ag or Ni/Ag.
21. The method of claim 20 , wherein the silver layer of the second metal layer has a thickness greater than or equal to 200 nm.
22. The method of claim 15 , wherein the first metal layer is a sputtered layer.
23. The method of claim 15 , wherein the second metal layer is a sputtered layer.
24. The method of claim 15 , wherein the electronic element has an active surface and an inactive surface opposite to the active surface, and the thermal conductor is disposed on a portion of the inactive surface.
25. The method of claim 24 , wherein a contact area of the thermal conductor with the inactive surface is smaller than 80% of an area of the inactive surface.
26. The method of claim 24 , wherein the heat dissipating element has a first surface and a second surface opposite to the first surface, and the thermal conductor is disposed on a portion of the first surface or the entire first surface.
27. The method of claim 26 , wherein the thermal conductor is disposed on a portion of the first surface, and a contact area of the thermal conductor with the first surface is smaller than 80% of a projection area of the first surface with respect to the inactive surface.
28. The method of claim 15 , further comprising an insulating material formed on the heat dissipating element and encapsulating the thermal conductor, or the thermal conductor and the electronic element.