Light-emitting diode and application therefor
A light-emitting diode is provided to include: a transparent substrate having a first surface, a second surface, and a side surface; a first conductive semiconductor layer positioned on the first surface of the transparent substrate; a second conductive semiconductor layer positioned on the first conductive semiconductor layer; an active layer positioned between the first conductive semiconductor layer and the second conductive semiconductor layer; a first pad electrically connected to the first conductive semiconductor layer; and a second pad electrically connected to the second conductive semiconductor layer, wherein the transparent substrate is configured to discharge light generated by the active layer through the second surface of the transparent substrate, and the light-emitting diode has a beam angle of at least 140 degrees or more. Accordingly, a light-emitting diode suitable for a backlight unit or a surface lighting apparatus can be provided.
1. A light emitting diode comprising:
a transparent substrate having a first surface, a second surface, and a side surface connecting the first surface and the second surface;
a first conductive type semiconductor layer placed on the first surface of the transparent substrate;
a second conductive type semiconductor layer placed on the first conductive type semiconductor layer;
an active layer placed between the first conductive type semiconductor layer and the second conductive type semiconductor layer to generate light;
a first pad electrically connected to the first conductive type semiconductor layer; and
a second pad electrically connected to the second conductive type semiconductor layer,
wherein the light emitting diode further comprises a conformal coating layer covering the second surface of the transparent substrate, the light emitted through the second surface is discharged through the conformal coating layer, wherein the conformal coating layer covers the side surface of the transparent substrate from the first surface to the second surface and does not extend beyond the side surface of the transparent substrate.
2. The light emitting diode according to claim 1 , wherein a total thickness of the transparent substrate and the conformal coating layer ranges from 225 μm to 600 μm.
3. The light emitting diode according to claim 2 , wherein the transparent substrate has a thickness of 150 μm to 400 μm.
4. The light emitting diode according to claim 2 , wherein the conformal coating has a thickness of 20 μm to 200 μm.
5. The light emitting diode according to claim 1 , wherein the transparent substrate has a thickness of 225 μm to 400 μm.
6. The light emitting diode according to claim 1 , further comprising:
a plurality of mesas separated from each other on the first conductive type semiconductor layer, each of the mesas comprising the active layer and the second conductive type semiconductor layer.
7. The light emitting diode of claim 6 , wherein at least one of the plurality of mesas extends to an edge of the first conductive type semiconductor layer.
8. The light emitting diode according to claim 6 , further comprising:
reflective electrodes respectively placed on the plurality of mesas and forming ohmic contact with the second conductive type semiconductor layer; and
a current spreading layer covering the plurality of mesas and the first conductive type semiconductor layer and having openings respectively placed in upper regions of the plurality of mesas while exposing the reflective electrodes, the current spreading layer forming ohmic contact with the first conductive type semiconductor layer and being insulated from the plurality of mesas,
wherein the first pad is electrically connected to the current spreading layer and the second pad is electrically connected to the reflective electrodes through the openings.
9. The light emitting diode according to claim 8 , wherein the current spreading layer comprises a reflective metal.
10. The light emitting diode according to claim 8 , wherein each of the reflective electrodes comprises a reflective metal layer and a barrier metal layer, the barrier metal layer covering an upper surface and a side surface of the reflective metal layer.
11. The light emitting diode according to claim 8 , further comprising:
an upper insulation layer covering at least part of the current spreading layer and including openings exposing the reflective electrodes,
wherein the second pad is electrically connected to the reflective electrodes exposed through the openings of the upper insulation layer.
12. The light emitting diode according to claim 8 , further comprising:
a lower insulation layer placed between the plurality of mesas and the current spreading layer and insulating the current spreading layer from the plurality of mesas,
wherein the lower insulation layer comprises openings respectively placed in the upper regions of the mesas and exposing the reflective electrodes.
13. The light emitting diode according to claim 12 , wherein each of the openings of the current spreading layer has a greater width than the openings of the lower insulation layer so as to allow the corresponding opening of the lower insulation layer to be completely exposed therethrough.
14. The light emitting diode according to claim 13 , further comprising:
an upper insulation layer covering at least part of the current spreading layer and including openings exposing the reflective electrodes,
the upper insulation layer covering sidewalls of the openings of the current spreading layer.
15. The light emitting diode according to claim 12 , wherein the lower insulation layer is a reflective dielectric layer.
16. The light emitting diode according to claim 6 , wherein the plurality of mesas have an elongated shape extending in one direction and are disposed parallel to each other.
17. The light emitting diode according to claim 1 , wherein the side surface is inclined such that the first surface has a larger area than the second surface.
18. A light emitting diode comprising:
a transparent substrate having a first surface, a second surface and a side surface connecting the first surface and the second surface;
a first conductive type semiconductor layer placed on the first surface of the transparent substrate;
a second conductive type semiconductor layer placed on the first conductive type semiconductor layer;
an active layer placed between the first conductive type semiconductor layer and the second conductive type semiconductor layer;
a first pad electrically connected to the first conductive type semiconductor layer;
a second pad electrically connected to the second conductive type semiconductor layer; and
a conformal coating layer covering the transparent substrate, wherein the conformal coating layer covers the side surface of the transparent substrate from the first surface to the second surface without extending beyond the first surface, thereby refraining from covering sides of the first conductive type semiconductor layer, the second conductive type semiconductor layer and the active layer,
wherein light generated in the active layer is discharged through the conformal coating layer, and a total thickness of the transparent substrate and the conformal coating ranges from 225 μm to 600 μm.
19. The light emitting diode according to claim 18 , wherein the transparent substrate has a thickness of 150 μm to 400 μm.
20. The light emitting diode according to claim 18 , wherein the active layer and the second conductive type semiconductor layer are patterned to form a plurality of mesas over the first conductive type semiconductor layer, the plurality of mesas being separated from one another.