Infrared image sensor
An image sensor includes a substrate, a plurality of visible light photosensitive devices, an infrared photosensitive device, a plurality of color filters, an infrared band-pass filter, a micro-lens layer and an infrared filter layer. The plurality of visible light photosensitive devices and the infrared photosensitive device are disposed in the substrate, wherein the plurality of visible light photosensitive devices and the infrared photosensitive device are arranged in an array. The plurality of color filters are respectively disposed to cover the plurality of visible light photosensitive device. In addition, the infrared band-pass filter disposed to cover the infrared photosensitive device. Furthermore, the micro-lens layer is disposed on the plurality of color filters and the infrared band-pass filter. The infrared filter layer is disposed to cover the plurality of visible light photosensitive device.
1. An image sensor, comprising:
a substrate;
a plurality of visible light photosensitive devices disposed in the substrate;
an infrared photosensitive device disposed in the substrate, wherein the plurality of visible light photosensitive devices and the infrared photosensitive device are arranged in an array;
a plurality of color filters respectively disposed to cover the plurality of visible light photosensitive devices;
an infrared band-pass filter disposed to cover the infrared photosensitive device;
a micro-lens layer disposed on the plurality of color filters and the infrared band-pass filter;
a light guide disposed between a portion of the micro-lens layer associated with the infrared photosensitive device and another portion of the micro-lens layer associated with the plurality of visible light photosensitive devices; and
an infrared filter layer disposed to cover the plurality of visible light photosensitive device.
2. The image sensor of claim 1 , wherein the infrared filter layer is disposed conformally on the micro-lens layer.
3. The image sensor of claim 1 , wherein the infrared filter layer is disposed on the micro-lens layer and has a substantially planar top surface.
4. The image sensor of claim 1 , wherein the light guide has a refractive index less than the color filters and the infrared band-pass filter.
5. The image sensor of claim 1 , wherein the infrared filter layer is disposed between the plurality of color filters and the micro-lens layer.
6. The image sensor of claim 1 , wherein the infrared filter layer is disposed between the plurality of color filters and the plurality of visible light photosensitive devices.
7. The image sensor of claim 1 , further comprising an anti-reflective coating layer disposed directly on the plurality of visible light photosensitive devices and the infrared photosensitive device.
8. The image sensor of claim 1 , further comprising a transparent layer disposed correspondingly over the infrared photosensitive device.
9. The image sensor of claim 8 , wherein the light guide has a refractive index less than the color filters and the transparent layer.
10. A method for fabricating an image sensor, the method comprising:
providing a substrate;
forming a plurality of visible light photosensitive devices in the substrate;
forming an infrared photosensitive device in the substrate, wherein the plurality of visible light photosensitive devices and the infrared photosensitive device are arranged in an array;
forming a plurality of color filters to respectively cover the plurality of visible light photosensitive devices;
forming an infrared band-pass filter to cover the infrared photosensitive device;
forming a micro-lens layer on the plurality of color filters and the infrared band-pass filter;
forming a light guide between a portion of the micro-lens layer associated with the infrared photosensitive device and another portion of the micro-lens layer associated with the plurality of visible light photosensitive devices; and
forming an infrared filter layer to cover the plurality of visible light photosensitive device.
11. The method of claim 10 , wherein the infrared filter layer is conformally formed on the micro-lens layer.
12. The method of claim 10 , wherein the infrared filter layer is disposed on the micro-lens layer and has a substantially planar top surface.
13. The method of claim 10 , wherein the light guide has a refractive index less than the color filters and the infrared band-pass filter.
14. The method of claim 10 , wherein the infrared filter layer is formed before forming the plurality of color filters.
15. The method of claim 10 , wherein the infrared filter layer is formed after forming the plurality of color filters and before forming the micro-lens layer.
16. The method of claim 10 , further comprising: forming an anti-reflective coating layer directly on the plurality of visible light photosensitive devices and the infrared photosensitive device.
17. An image sensor, comprising:
a substrate;
a plurality of visible light photosensitive devices disposed in the substrate;
an infrared photosensitive device disposed in the substrate, wherein the plurality of visible light photosensitive devices and the infrared photosensitive device are arranged in an array;
a plurality of color filters disposed respectively to cover the plurality of visible light photosensitive devices;
an infrared band-pass filter disposed to cover the infrared photosensitive device;
a micro-lens layer disposed on the plurality of color filters and the infrared band-pass filter;
an infrared filter layer disposed to cover the plurality of visible light photosensitive device;
a transparent layer disposed to cover the infrared photosensitive device; and
a light guide disposed between the infrared filter layer and the transparent layer, wherein the light guide has a refractive index less than the infrared filter layer and the transparent layer.
18. The image sensor of claim 17 , further comprising an anti-reflective coating layer directly on the plurality of visible light photosensitive devices and the infrared photosensitive device.