Semiconductor process for treating metal gate
A semiconductor process for treating a metal gate includes the following steps. A metal gate including a main conductive material on a substrate is provided. A H 2 /N 2 plasma treatment process is performed to reduce the main conductive material.
1. A semiconductor process for treating a metal gate, comprising:
providing a metal gate comprising a main conductive material on a substrate;
performing a H2/N2 plasma treatment process to deoxidize the main conductive material; and
forming a contact plug contacting the main conductive material after the H2/N2 plasma treatment process is performed.
2. The semiconductor process for treating a metal gate according to claim 1 , wherein the main conductive material comprises a metal oxide layer at a top surface of a metal layer.
3. The semiconductor process for treating a metal gate according to claim 2 , wherein the metal oxide layer is reduced into a part of the metal layer while the H2/N2 plasma treatment process is performed.
4. The semiconductor process for treating a metal gate according to claim 3 , wherein the main conductive material comprises aluminum or tungsten.
5. The semiconductor process for treating a metal gate according to claim 4 , wherein the metal oxide layer comprises an aluminum oxide layer while the metal layer comprises an aluminum layer.
6. The semiconductor process for treating a metal gate according to claim 1 , wherein the H2/N2 plasma treatment process comprises supplying a gas mixture of H2/N2 with a ratio of 2-3.5%.
7. The semiconductor process for treating a metal gate according to claim 6 , wherein the H2/N2 plasma treatment process comprises supplying a gas mixture of H2/N2 with a ratio of 2.9%.
8. The semiconductor process for treating a metal gate according to claim 1 , wherein the H2/N2 plasma treatment process comprises inserting an N2 gas while supplying a gas mixture of H2/N2.
9. The semiconductor process for treating a metal gate according to claim 8 , wherein the H2/N2 plasma treatment process comprises inserting an N2 gas of 1900 sccm while supplying a gas mixture of H2/N2 with a ratio of 4% of 5000 sccm.
10. The semiconductor process for treating a metal gate according to claim 1 , further comprising:
forming a dielectric layer on the metal gate and patterning the dielectric layer to expose the main conductive material by using a photoresist layer and then removing the photoresist layer before the H2/N2 plasma treatment process is performed.
11. The semiconductor process for treating a metal gate according to claim 10 , further comprising:
performing a strip treatment process to remove the photoresist layer before the H2/N2 plasma treatment process is performed.
12. The semiconductor process for treating a metal gate according to claim 11 , wherein the strip treatment process comprises an O2 strip treatment process.
13. The semiconductor process for treating a metal gate according to claim 11 , wherein the strip treatment process comprises a first H2/N2 plasma treatment process having higher H2/N2 ratio than the H2/N2 plasma treatment process.
14. The semiconductor process for treating a metal gate according to claim 13 , wherein the first H2/N2 plasma treatment process has a H2/N2 ratio of 4%.
15. The semiconductor process for treating a metal gate according to claim 1 , further comprising:
forming a source/drain in the substrate beside the metal gate; and
forming S/D contact plugs directly contacting the source/drain while the contact plug contacting the main conductive material.