Protection ring for image sensors

1. A method of forming an image sensor, comprising:

providing a semiconductor substrate including a pixel sensor array region and a peripheral circuitry region;

providing a first mask over the semiconductor substrate, wherein the first mask has a first peripheral opening over the peripheral circuitry region and has a first set of ring-like openings surrounding the pixel sensor array region;

concurrently implanting ions corresponding to a first conductivity type through the first peripheral opening to form a first doped region in the peripheral circuitry region and through the first set of ring-like openings to form a first plurality of concentric rings separating the pixel sensor array region from the peripheral circuitry region;

providing a second mask over the semiconductor substrate, wherein the second mask has a second peripheral opening, which is different from the first peripheral opening, over the peripheral circuitry region and has a second set of ring-like openings surrounding the pixel sensor array region; and

concurrently implanting ions corresponding to a second conductivity type through the second peripheral opening to form a second doped region in the peripheral circuitry region and through the second set of ring-like openings to form a second plurality of concentric rings which are interspersed with the first plurality of concentric rings to separate the pixel sensor array region from the peripheral circuitry region.

2. The method of claim 1 , wherein the first and second plurality of concentric rings collectively define a protection ring having a total annular width between an innermost diameter of an innermost concentric ring and an outermost diameter of an outermost concentric ring, and wherein the total annular width is greater than 20 microns.

3. The method of claim 2 , further comprising:

performing a dry etching process on the image sensor after the protection ring has been formed and thereby causing localized charge to accumulate in conductive regions of the image sensor; and

wherein the protection ring is adapted to deter the localized charge from discharging in a sudden and catastrophic manner from the peripheral circuitry into the pixel sensor array region.

4. The method of claim 2 , wherein each ring in the first or second plurality of concentric rings is formed by a respective ion implantation operation which forms a corresponding region in the pixel sensor array region or in the peripheral circuitry region.

5. The method of claim 2 , wherein the protection ring comprises:

a first ring neighboring the pixel sensor array region;

a second ring circumscribing the first ring and meeting the first ring at a first p-n junction, wherein the first ring has a first width as measured from an outer perimeter of the pixel sensor array region to the first p-n junction; and

a third ring circumscribing the second ring and meeting the second ring at a second p-n junction, wherein the second ring has a second width as measured between from the first p-n junction to the second p-n junction, wherein the second width is greater than the first width.

6. The method of claim 1 , further comprising:

forming photosensors corresponding to a plurality of pixel regions over or within the pixel sensor array region;

forming logic circuitry in the peripheral circuitry region; and

arranging a color filter array and a micro-lens array over a backside surface of the semiconductor substrate.

7. A method, comprising:

forming a pixel sensor array including a plurality of photosensors in a semiconductor substrate;

forming peripheral circuitry in or on the semiconductor substrate and being spaced apart from the pixel sensor array; and

forming a protection ring circumscribing an outer perimeter of the pixel sensor array and separating the pixel sensor array from the peripheral circuitry; the protection ring including a plurality of concentric rings which have a total annular width of greater than 20 microns as measured from an innermost edge of an innermost concentric ring to an outermost edge of an outermost concentric ring, wherein an intermediate concentric ring circumscribes the innermost concentric ring and meets the innermost concentric ring at a first p-n junction, and a first outer concentric ring circumscribes the intermediate concentric ring and meets the intermediate concentric ring at a second p-n junction.

8. The method of claim 7 , wherein the first outer concentric ring is the outermost concentric ring, and a ring of substrate grounding contacts circumscribes the outermost concentric ring.

9. The method of claim 7 , wherein the innermost concentric ring has a first width as measured from the outer perimeter of the pixel sensor array to the first p-n junction, and wherein the intermediate concentric ring has a second width as measured from the first p-n junction to the second p-n junction, wherein the second width is greater than the first width.

10. The method of claim 9 , wherein the second width is at least approximately three times larger than the first width.

11. The method of claim 7 , wherein the protection ring further includes a second outer concentric ring circumscribing the first outer concentric ring and meeting the first outer concentric ring at a third p-n junction.

12. The method of claim 11 , wherein the second outer concentric ring has a fourth width as measured from the third p-n junction to an outermost extent of the second outer concentric ring, wherein the fourth width is greater than a second width of the intermediate concentric ring as measured from the first p-n junction to the second p-n junction.

13. The method of claim 11 , wherein the innermost concentric ring has a first width as measured from the outer perimeter of the pixel sensor array to the first p-n junction, wherein the first outer concentric ring has a third width as measured from the second p-n junction to the third p-n junction, wherein the first and third widths are at least substantially equal.

14. The method of claim 11 , wherein the outermost concentric ring circumscribes the second outer concentric ring and meets the second outer concentric ring at a fourth p-n junction.

15. The method of claim 14 , wherein the innermost concentric ring is p-type, the intermediate concentric ring is n-type, the first outer concentric ring is p-type, the second outer concentric ring is n-type, and the outermost concentric ring is p-type.

16. The method of claim 15 , wherein the second outer concentric ring has a fourth width as measured from the third p-n junction to the fourth p-n junction, wherein the fourth width is greater than a second width of the intermediate concentric ring as measured from the first p-n junction to the second p-n junction.

17. The method of claim 16 , wherein the innermost concentric ring has a first width as measured from the outer perimeter of the pixel sensor array to the first p-n junction, wherein the first outer concentric ring has a third width as measured from the second p-n junction to the third p-n junction, wherein the outermost concentric ring has a fifth width as measured from the fourth p-n junction to an outermost edge of the outermost concentric ring;

wherein the first, third, and fifth widths are at least substantially equal.

18. The method of claim 17 , wherein the fourth width is at least substantially equal to each of the first, third, and fifth widths.

19. A method, comprising:

providing a semiconductor substrate including a pixel sensor array region and a peripheral circuitry region;

providing a first mask over the semiconductor substrate, wherein the first mask has a first peripheral opening over the peripheral circuitry region and has a first set of ring-like openings surrounding the pixel sensor array region, wherein a first ring-like opening of the first set has a first annular width and a second ring-like opening of the first set has a second annular width that differs from the first annular width;

concurrently implanting ions corresponding to a first conductivity type through the first peripheral opening to form a first doped region in the peripheral circuitry region and through the first set of ring-like openings to form a first plurality of concentric rings separating the pixel sensor array region from the peripheral circuitry region;

providing a second mask over the semiconductor substrate, wherein the second mask has a second peripheral opening, which is different from the first peripheral opening, over the peripheral circuitry region and has a second set of ring-like openings surrounding the pixel sensor array region; and

concurrently implanting ions corresponding to a second conductivity type through the second peripheral opening to form a second doped region in the peripheral circuitry region and through the second set of ring-like openings to form a second plurality of concentric rings which are interspersed with the first plurality of concentric rings to separate the pixel sensor array region from the peripheral circuitry region.

20. The method of claim 19 , wherein each ring-like opening of the second set has an annular width that is equal to annular widths of other ring-like openings of the second set.