Semiconductor device and method for manufacturing the same
According to one embodiment, the contact electrode extends in the inter-layer insulating layer toward the second semiconductor region. The metal silicide film is in contact with the second semiconductor region and the contact electrode. The metal silicide film includes a first part and a second part. The first part is provided between a bottom of the contact electrode and the second semiconductor region. The second part is provided on a surface of the second semiconductor region between the first part and the gate electrode. A bottom of the second part is located at a position shallower than a bottom the first part.
1. A semiconductor device comprising:
a control section including a first transistor and a second transistor, the first transistor includes
a semiconductor layer,
a first gate insulating film provided on the semiconductor layer,
a first gate electrode provided on the first gate insulating film,
a first semiconductor film containing silicon, the first semiconductor film provided on the semiconductor layer at an area lateral to the first gate electrode in a gate length direction, and
a first metal silicide film provided on the first semiconductor film, the second transistor includes
the semiconductor layer,
a second insulating film provided on the semiconductor layer, and thicker than the first gate insulating film,
a second gate electrode provided on the second gate insulating film,
a second semiconductor film containing silicon, the second semiconductor film provided on the semiconductor layer at an area lateral to the second gate electrode in a gate length direction, and
a second metal silicide film provided on the second semiconductor film, and smaller in area than the first metal silicide film.
2. The device according to claim 1 , further comprising:
an inter-layer insulating layer provided on the semiconductor layer, and covering the first transistor and the second transistor;
a first contact electrode extending in the inter-layer insulating layer toward the first metal silicide film, and having contact with the first metal silicide film; and
a second contact electrode extending in the inter-layer insulating layer toward the second metal silicide film, and having contact with the second metal silicide film.
3. The device according to claim 1 , wherein the first metal silicide film is thicker than the second metal silicide film.
4. The device according to claim 1 , wherein the second semiconductor film is thicker than the first semiconductor film.
5. The device according to claim 1 , further comprising:
an element section provided on the semiconductor layer, and electrically connected to the control section.
6. The device according to claim 5 , wherein the element section includes a plurality of memory cells disposed three-dimensionally.