Solid-state image sensing device having an organic photoelectric conversion section fills a depression section and solid-state image pickup unit including same
Image sensors, image pickup devices, and electronic apparatuses are provided. These can include an image sensor or image pickup device that includes a first insulating layer over a semiconductor substrate. A depression section is formed in the first insulating layer. An organic photoelectric conversion section fills the depression section. One or more inorganic photoelectric conversion sections can also be provided, with the organic photoelectric conversion section overlapping the inorganic photoelectric conversion sections. Alternatively or in addition, the depression section can taper from a side adjacent a light receiving side of the image sensor to a side adjacent the at least a first inorganic photoelectric conversion section.
1. An image sensor, comprising:
a first insulating layer over a semiconductor substrate;
a depression section formed in the first insulating layer; and
an organic photoelectric conversion section, wherein the organic photoelectric conversion section fills the depression section.
2. The image sensor of claim 1 , further comprising:
at least a first inorganic photoelectric conversion section formed in the semiconductor substrate, wherein the organic photoelectric conversion section overlaps the at least a first inorganic photoelectric conversion section.
3. The image sensor of claim 2 , wherein the depression section tapers from a side adjacent a light receiving side of the image sensor to a side adjacent the at least a first inorganic photoelectric conversion section.
4. The image sensor of claim 1 , wherein the organic photoelectric conversion section includes a mixed layer that includes an n-type semiconductor and a p-type semiconductor.
5. The image sensor of claim 1 , wherein the organic photoelectric conversion section includes multiple layers.
6. The image senor of claim 1 , wherein the organic photoelectric conversion section includes multiple layers, wherein a first one of the layers of the organic photoelectric conversion section is provided along a sidewall and a bottom surface of the depression section adjacent the semiconductor substrate.
7. The image sensor of claim 6 , wherein the first one of the layers of the organic photoelectric conversion section is an n-type semiconductor layer, wherein a second one of the layers of the organic photoelectric conversion section is a mixed layer that includes an n-type semiconductor and a p-type semiconductor, and wherein a third one of the layers of the organic photoelectric conversion section is a p-type semiconductor layer.
8. The image sensor of claim 2 , further comprising:
a second inorganic photoelectric conversion section formed in the semiconductor substrate, wherein the organic photoelectric conversion section overlaps the first and second inorganic photoelectric conversion sections.
9. The image sensor of claim 1 , further comprising:
an upper electrode in contact with a top surface of the organic photoelectric conversion section;
a lower electrode in contact with a lower surface of the organic photoelectric conversion section, wherein the lower electrode is between the organic photoelectric conversion section and the semiconductor substrate.
10. The image sensor of claim 9 , further comprising:
a storage layer, wherein the storage layer is formed in the semiconductor substrate, and wherein the storage layer is electrically interconnected to the lower electrode.
11. The image sensor of claim 1 , further comprising:
a wiring layer, wherein the image sensor is a back illumination type image sensor in which the at least a first inorganic photoelectric conversion element is provided between a light receiving surface of the semiconductor substrate and the wiring layer.
12. An image pickup device, comprising:
an on-chip lens;
a flattening layer, wherein the on-chip lens is provided on the flattening layer;
a solid-state image pickup device, including:
a first insulating layer over a semiconductor substrate;
a depression section formed in the first insulating layer;
an organic photoelectric conversion section, wherein the organic photoelectric conversion section fills the depression section.
13. The image pickup device of claim 12 , further comprising:
at least a first inorganic photoelectric conversion section formed in the semiconductor substrate, wherein the organic photoelectric conversion section overlaps the at least a first inorganic photoelectric conversion section, and wherein the flattening layer is interconnected to the solid-state image pickup device.
14. The device of claim 12 , wherein the depression section tapers from a side adjacent a light receiving side of the image sensor to a side adjacent the semiconductor substrate.
15. The device of claim 12 , wherein the organic photoelectric conversion section includes a mixed layer that includes an n-type semiconductor and a p-type semiconductor.
16. An electronic apparatus, comprising:
an optical system;
a shutter unit, wherein the shutter unit receives light from the optical system;
an image pickup unit, wherein the shutter unit controls an optical irradiation period for the image pickup unit, the image pickup unit including:
a first insulating layer over a semiconductor substrate;
a depression section formed in the first insulating layer;
an organic photoelectric conversion section, wherein the organic photoelectric conversion section fills the depression section;
a drive section, wherein the drive section is operable to control operation of the shutter unit and transfer operations of the image pickup unit;
a signal processing section, wherein the signal processing section is operable to perform signal processing on signals output from the image pickup unit.
17. The electronic apparatus of claim 16 , further comprising:
at least a first inorganic photoelectric conversion section formed in the semiconductor substrate, wherein the organic photoelectric conversion section overlaps the at least a first inorganic photoelectric conversion section.
18. The apparatus of claim 16 , wherein the depression section tapers from a side adjacent a light receiving side of the image sensor to a side adjacent the semiconductor substrate.
19. The apparatus of claim 16 , wherein the organic photoelectric conversion section includes a mixed layer that includes an n-type semiconductor and a p-type semiconductor.
20. The apparatus of claim 16 , wherein the organic photoelectric conversion section includes multiple layers.
21. The apparatus of claim 20 , wherein a first one of the layers of the organic photoelectric conversion section is provided along a sidewall and a bottom surface of the depression section adjacent the semiconductor surface.