Semiconductor device and manufacturing method thereof
When a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are stacked and a source and drain electrode layers are provided in contact with the oxide semiconductor film is manufactured, after the formation of the gate electrode layer or the source and drain electrode layers by an etching step, a step of removing a residue remaining by the etching step and existing on a surface of the gate electrode layer or a surface of the oxide semiconductor film and in the vicinity of the surface is performed. The surface density of the residue on the surface of the oxide semiconductor film or the gate electrode layer can be 1×10 13 atoms/cm 2 or lower.
1. A method for manufacturing a semiconductor device comprising the steps of:
forming a conductive film over an insulating surface;
forming a gate electrode by etching the conductive film using a gas including halogen;
removing a residue on the gate electrode after the step of forming the gate electrode;
forming a gate insulating film over the gate electrode after the step of removing the residue on the gate electrode;
forming an oxide semiconductor film over the gate insulating film; and
forming a source electrode and a drain electrode over the oxide semiconductor film,
wherein the oxide semiconductor film comprises indium, and
wherein the step of removing the residue is performed by a plasma treatment.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein the residue comprises at least one of chlorine, fluorine, boron, phosphorus, aluminum, iron, and carbon.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein the gate electrode comprises at least one of molybdenum, titanium, tantalum, tungsten, aluminum, copper, chromium, neodymium, and scandium.
4. A method for manufacturing a semiconductor device comprising the steps of:
forming a first conductive film over an insulating surface;
forming a gate electrode by etching the first conductive film using a gas including halogen;
removing a residue on the gate electrode;
forming a gate insulating film over the gate electrode after the step of removing the residue on the gate electrode;
forming an oxide semiconductor film over the gate insulating film;
forming a second conductive film over the oxide semiconductor film;
forming a source electrode and a drain electrode by etching the second conductive film using a gas including halogen; and
removing a residue on the oxide semiconductor film after the step of forming the source electrode and the drain electrode.
5. The method for manufacturing a semiconductor device according to claim 4 , wherein the step of removing the residue is performed by a plasma treatment.
6. The method for manufacturing a semiconductor device according to claim 4 , wherein the step of removing the residue is performed by a treatment using a solution.
7. The method for manufacturing a semiconductor device according to claim 4 , wherein the residue comprises at least one of chlorine, fluorine, boron, phosphorus, aluminum, iron, and carbon.
8. The method for manufacturing a semiconductor device according to claim 4 , wherein the oxide semiconductor film comprises indium.
9. The method for manufacturing a semiconductor device according to claim 4 , wherein the gate electrode comprises at least one of molybdenum, titanium, tantalum, tungsten, aluminum, copper, chromium, neodymium, and scandium.