Support unit and substrate treating device including the same
Provided is a method of manufacturing a support unit that supports a substrate. The method includes: providing a support plate formed of a non-conductive material and supporting a substrate; providing a base plate disposed below the support plate and formed of a material including a conductive material; and depositing a metallic layer at a bottom of the support plate and coupling the metallic layer and the base plate through brazing.
1. A method of manufacturing a support unit that supports a substrate, the method comprising:
providing a support plate formed of a non-conductive material and supporting a substrate;
providing a base plate disposed below the support plate and formed of a material including a conductive material; and
depositing a metallic layer at a bottom of the support plate and coupling the metallic layer and the base plate through brazing,
wherein a plurality of protrusions are provided at a bottom surface of the metallic layer or a top surface of the base plate.
2. The method of claim 1 , further comprising providing a filler of a metallic material between the support plate and the base plate to couple the support plate and the base plate by using the filler as a medium.
3. The method of claim 1 , wherein the base plate is formed of a conductive composite material obtained by mixing the conductive material and an added material to minimize a heat stress due to a thermal expansion rate difference between the base plate and the support plate.
4. The method of claim 3 , wherein the conductive material comprises Ti or Al and the added material comprises one of SiC, Al 2 O 3 , Si, graphite, and glass fiber.
5. The method of claim 3 , wherein a thermal expansion rate difference of the added material from a thermal expansion rate of the conductive material of the base plate or a material of the support plate is less than a thermal expansion rate difference between the conductive material of the base plate and the material of the support plate.
6. The method of claim 3 , wherein the conductive composite material comprises the added material of 10% to 70%.
7. The method of claim 1 , wherein the metallic layer is deposited to the bottom of the support plate through vacuum deposition or plating.
8. The method of claim 1 , wherein the plurality of protrusions are configured to minimize a stress due to a thermal expansion rate difference between the bottom surface of the metallic layer and a top surface of the base plate.
9. The method of claim 7 , wherein the metallic layer comprises one of Ti, Ni, and Ag.
10. The method of claim 2 , wherein the filler comprises AL.
11. The method of claim 2 , wherein a metallic mesh buffering a thermal expansion at a high temperature is provided in the filler.
12. The method of claim 11 , wherein the metallic mesh has a porosity of 20% to 80%.
13. A substrate support unit comprising:
a support plate including an electrode that adsorbs a substrate by electrostatic force and having a bottom surface where a metallic layer is deposited; and
a base plate disposed below the support plate, connected to a high frequency power, and coupled to the metallic layer through brazing,
wherein a plurality of protrusions are provided at the bottom surface of the metallic layer or a top surface of the base plate.
14. The substrate support unit of claim 13 , wherein an even part is provided to minimize a stress due to a thermal expansion of a bottom of the metallic layer, a top surface of the base plate, or a form of a metallic deposition layer and an uneven part is provided in a mesh form or an embossing form.
15. The substrate support unit of claim 13 , wherein the base plate comprises a conductive composite material obtained by adding one of Sic, Al 2 O 3 , Si, graphite, and glass fiber to a conductive material to minimize a heat stress due to a thermal expansion rate difference between the base plate and the support plate.
16. The substrate support unit of claim 13 , further comprising a bonding part disposed between the metallic layer and the base plate and fixing the metallic layer and the base plate by using a filler as a medium.
17. The substrate support unit of claim 16 , wherein the bonding part further comprises a metallic mesh therein.
18. A substrate treating device comprising:
a chamber having a treating space therein;
a support unit disposed in the chamber and supporting a substrate;
a gas supply unit supplying a process gas to the treating space; and
a plasma source generating plasma from the process gas,
wherein the support unit comprises:
a support plate including an electrode that adsorbs a substrate by electrostatic force and having a bottom surface where a metallic layer is deposited; and
a base plate provided below the support plate and connected to a high frequency power; and
a metallic filler disposed between the support plate and the base plate and bonding the support plate and the base plate by brazing,
wherein a plurality of protrusions are provided at a bottom surface of the metallic layer or a top surface of the base plate.
19. The substrate treating device of claim 18 , wherein the base plate comprises a conductive composite material obtained by adding one of SiC, Al 2 O 3 , Si, graphite, and glass fiber to a conductive material to minimize a heat stress due to a thermal expansion rate difference between the base plate and the support plate.
20. The substrate treating device of claim 18 , wherein the support unit further includes a filler between the support plate and the base plate.
21. The substrate treating device of claim 20 , wherein the filler is provided in a metallic mesh form.