Thin film transistor array panel and method of manufacturing the same
A thin film transistor array panel that includes: a substrate; a gate electrode disposed on the substrate; a semiconductor layer disposed on the substrate; a gate insulating layer disposed between the gate electrode and the semiconductor layer; a source electrode disposed on the semiconductor layer and a drain electrode facing the source electrode; a metal oxide layer covering the source electrode and the drain electrode; and a passivation layer covering the source electrode, the drain electrode, and the metal oxide layer, wherein the source electrode and the drain electrode include a first material and a second material which is added to the first material and metal included in the metal oxide layer is formed by diffusing the second material.
1. A thin film transistor array panel, comprising:
a substrate;
a gate electrode disposed on the substrate;
a semiconductor layer disposed on the substrate;
a gate insulating layer disposed between the gate electrode and the semiconductor layer;
a source electrode disposed on the semiconductor layer and a drain electrode facing the source electrode;
a metal oxide layer covering the source electrode and the drain electrode;
a diffusion metal layer disposed between the source electrode and the metal oxide layer and between the drain electrode and the metal oxide layer; and
a passivation layer covering the source electrode, the drain electrode, and the metal oxide layer,
wherein the source electrode and the drain electrode include a first material and a second material which is added to the first material, and
wherein metal included in the metal oxide layer is the same as the second material.
2. The thin film transistor array panel of claim 1 ,
wherein the metal oxide layer contacts lateral walls of the diffusion metal layer.
3. The thin film transistor array panel of claim 2 , wherein:
the source electrode and the drain electrode include copper or copper alloy.
4. The thin film transistor array panel of claim 3 , wherein:
the second material includes at least one of Mn, Mg, Al, Mo, W, Ti, Ga, In, Ni, La, Nd, Sn, Ag, Cr, Zr, Zn, and Fe.
5. The thin film transistor array panel of claim 4 , further comprising:
barrier layers disposed under the source electrode and the drain electrode, the barrier layer including metal oxide.
6. The thin film transistor array panel of claim 5 , wherein:
the barrier layer includes one of indium-zinc oxide (IZO), gallium-zinc oxide (GZO), and aluminum-zinc oxide (AZO).
7. The thin film transistor array panel of claim 1 , wherein:
the metal oxide layer covers upper surfaces and lateral walls of the source electrode and the drain electrode, respectively.
8. The thin film transistor array panel of claim 7 , wherein:
the passivation layer contacts the upper surface and the lateral wall of the metal oxide layer.
9. The thin film transistor array panel of claim 1 , further comprising:
barrier layers disposed under the source electrode and the drain electrode; and
capping layers disposed over the source electrode and the drain electrode, the barrier layer and the capping layer including metal oxide.
10. The thin film transistor array panel of claim 9 , wherein:
lateral walls of the source electrode and the drain electrode, respectively, which are adjacent to a channel region of the semiconductor layer are exposed and the exposed lateral wall of the source electrode and the exposed lateral wall of the drain electrode are covered with the metal oxide layer.
11. The thin film transistor array panel of claim 1 , wherein:
the semiconductor layer includes oxide semiconductor.
12. The thin film transistor array panel of claim 1 , wherein:
the lateral wall of the semiconductor layer is aligned like the lateral walls of the source electrode and the drain electrode, except for the channel region.
13. The thin film transistor array panel of claim 1 , wherein:
the diffusion metal layer includes the alloyed material in the source electrode and the drain electrode.