Organic light emitting display devices and methods of manufacturing organic light emitting display devices
An organic light emitting display device may include a substrate having a pixel region and a transparent region, a first capacitor disposed in the transparent region of the substrate, a semiconductor device disposed in the pixel region of the substrate, a second capacitor disposed on the semiconductor device, and an organic light emitting structure disposed on the second capacitor. The organic light emitting display device may have a sufficient capacitance for components including the semiconductor device and the organic light emitting structure without increasing an area of the pixel region while maintaining a transmittance of the organic light emitting display device.
1. An organic light emitting display device comprising:
a substrate having a pixel region and a transparent region;
a first capacitor disposed in the transparent region of the substrate;
a semiconductor device disposed in the pixel region of the substrate;
a second capacitor disposed on the semiconductor device; and
an organic light emitting structure disposed on the second capacitor.
2. The organic light emitting display device of claim 1 , wherein the semiconductor device comprises:
an active pattern disposed on the substrate;
a gate insulation layer disposed on the active pattern, the gate insulation layer extending to the transparent region;
a gate structure disposed on the gate insulation layer;
a source electrode contacting a source region of the active pattern; and
a drain electrode contacting a drain region of the active pattern.
3. The organic light emitting display device of claim 2 , wherein the first capacitor comprises:
a first lower electrode disposed on the substrate;
a first dielectric structure disposed on the first lower electrode; and
a first upper electrode disposed on the first dielectric structure.
4. The organic light emitting display device of claim 3 , wherein the first lower electrode includes polysilicon doped with impurities.
5. The organic light emitting display device of claim 3 , wherein the first dielectric structure includes a portion of the gate insulation layer positioned in the transparent region.
6. The organic light emitting display device of claim 3 , wherein the gate structure of the semiconductor device comprises a first gate electrode disposed on the gate insulation layer, and a second gate electrode disposed on the first gate electrode.
7. The organic light emitting display device of claim 6 , wherein the first upper electrode includes a material same as a material of the first gate electrode.
8. The organic light emitting display device of claim 3 , wherein the second capacitor comprises:
a second lower electrode;
a second dielectric structure disposed on the second lower electrode; and
a second upper electrode disposed on the second dielectric structure.
9. The organic light emitting display device of claim 8 , wherein the second lower electrode of the second capacitor is the gate structure of the semiconductor device.
10. The organic light emitting display device of claim 8 , wherein the second dielectric structure includes a portion of an insulating interlayer disposed on the gate structure.
11. The organic light emitting display device of claim 1 , further comprising:
at least one insulating interlayer disposed on the second capacitor; and
a first connection wiring disposed on the at least one insulating interlayer, wherein the first connection wiring electrically connects the semiconductor device to the first capacitor.
12. The organic light emitting display device of claim 11 , further comprising a second connection wiring disposed on the at least one insulating interlayer, wherein the second connection wiring is adjacent to the first connection wiring and the second connection wiring electrically connects the first capacitor to the second capacitor.
13. A method of manufacturing an organic light emitting display device, which comprises:
providing a substrate having a pixel region and a transparent region;
forming a semiconductor device in the pixel region of the substrate;
forming a first capacitor in the transparent region of the substrate;
forming a second capacitor on the semiconductor device; and
forming an organic light emitting structure on the second capacitor.
14. The method of manufacturing an organic light emitting display device of claim 13 , wherein forming of the semiconductor device and forming of the first capacitor comprise:
forming an active pattern of the semiconductor device and a first lower electrode of the capacitor on the substrate;
forming a gate insulation layer on the active pattern and the first lower electrode;
forming a first upper electrode of the first capacitor on the gate insulation layer in the transparent region; and
forming a gate structure of the semiconductor device on the gate insulation layer in the pixel region.
15. The method of manufacturing an organic light emitting display device of claim 14 , wherein forming of the first upper electrode of the first capacitor and forming of the gate structure of the semiconductor device comprise:
forming a first electrode layer on the gate insulation layer;
forming a second electrode layer on the first electrode layer; and
etching the first electrode layer and the second electrode layer.
16. The method of manufacturing an organic light emitting display device of claim 14 , wherein forming of the first upper electrode of the first capacitor and forming of the gate structure of the semiconductor device comprise:
forming a first electrode layer on the gate insulation layer;
forming the first upper electrode by patterning the first electrode layer;
forming a second electrode layer on the gate insulation layer; and
forming the gate structure by patterning the second electrode layer.
17. The method of manufacturing an organic light emitting display device of claim 14 , wherein forming of the second capacitor comprises:
forming an insulating interlayer on the gate structure; and
forming a second upper electrode on the insulating interlayer.
18. The method of manufacturing an organic light emitting display device of claim 13 , further comprising:
forming at least one insulating interlayer on the second capacitor; and
forming a first connection wiring on the at least one insulating interlayer, wherein the first connection wiring electrically connects the semiconductor device to the first capacitor.
19. The method of manufacturing an organic light emitting display device of claim 18 , wherein forming the first connection wiring comprises:
forming a first contact hole and a second contact hole through the at least one insulating interlayer, the first contact hole exposing the gate structure and the second contact hole exposing the first upper electrode; and
forming the first connection wiring on the gate structure exposed through the first contact hole, a sidewall of the first contact hole, the first upper electrode exposed through the second contact hole, a sidewall of the second contact hole, and the at least one insulating interlayer.
20. The method of manufacturing an organic light emitting display device of claim 18 , further comprising forming a second connection wiring on the at least one insulating interlayer, wherein the second connection wiring electrically connects the first capacitor to the second capacitor.