IP Library › Granted Patent US 9,634,280
Granted Patent B2
US 9,634,280 · App. 13/424,616 · Granted Apr 25, 2017

Light-emitting device and manufacturing method thereof

Inventor: Shunpei Yamazaki (Tokyo, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/5212H01L51/5228H01L51/56H01L23/528H01L51/5275H01L2251/5315H01L2251/568
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Quick Facts
Patent No.
US 9,634,280
App. No.
13/424,616
Granted
Apr 25, 2017
Kind
B2
Abstract

An EL light-emitting element in which a lower electrode layer, an EL layer, and an upper electrode layer are stacked is formed on a substrate, and a wiring is formed on a counter substrate. Further, the substrate and the counter substrate are bonded so that the wiring is in physical contact with the upper electrode layer of the EL element. Accordingly, the wiring can serve as an auxiliary wiring for increasing conductivity of the upper electrode layer. With such an auxiliary wiring, a potential drop due to the resistance of the upper electrode layer can be suppressed even in the light-emitting device whose light-emitting portion is large.

Claims (33)

1. A method for manufacturing a light-emitting device, comprising the steps of:

forming a first pair of wirings and a second pair of wirings over and in contact with a same surface of a first substrate;

forming a planarization layer over the first pair of wirings, the second pair of wirings, and the first substrate;

forming a lower electrode layer over the planarization film and in electrical contact with the first pair of wirings;

forming a light-emitting organic compound layer over the lower electrode layer;

forming an upper electrode layer over the light-emitting organic compound layer to form a light-emitting element, wherein the upper electrode layer is in electrical contact with the second pair of wirings;

forming an electrical connector over a portion of the upper electrode layer;

forming first and second pluralities of wirings over a second substrate; and

bonding the first substrate and the second substrate so that the upper electrode layer is in contact with the first plurality of wirings, and the electrical connector is in direct contact with the second plurality of wirings;

forming a first lens array having a first diameter over the second substrate; and

forming a second lens array having a second diameter different from the first diameter over the second substrate;

wherein the second substrate is capable of transmitting light emitted from the light-emitting element,

wherein a sealant is provided between the upper electrode layer and the second substrate,

wherein a refractive index of the sealant is higher than a refractive index of the upper electrode layer and is lower than a refractive index of the second substrate,

wherein the first plurality of wirings overlaps the light-emitting organic compound layer, and

wherein a portion of a bottom surface of the lower electrode layer, a portion of a bottom surface of the light-emitting compound layer, and a portion of the bottom surface of the upper electrode layer are in direct contact with a top surface of the planarization film.

2. A method for manufacturing a light-emitting device, comprising the steps of:

forming a first pair of wirings and a second pair of wirings over and in contact with a same surface of a first substrate;

forming a planarization layer over the first pair of wirings, the second pair of wirings, and the first substrate;

forming a light-emitting element in which a lower electrode layer, a layer containing a light-emitting compound, and an upper electrode layer are stacked in this order over the planarization film and the same surface of the first substrate;

forming an electrical connector over a portion of the upper electrode layer;

forming a third wiring over a second substrate; and

bonding the first substrate and the second substrate so that the upper electrode layer is in contact with a first portion of the third wiring, and the electrical connector is in direct contact with a second portion of the third wiring;

forming a first lens array over the second substrate; and

forming a second lens array having a second diameter different from the first diameter over the first lens array,

wherein the lower electrode layer is in electrical contact with the first pair of wirings and the upper electrode layer is in electrical contact with the second pair of wirings;

wherein the second substrate is capable of transmitting light emitted from the light-emitting element,

wherein a sealant is provided between the upper electrode layer and the second substrate,

wherein a refractive index of the sealant is higher than a refractive index of the upper electrode layer and is lower than a refractive index of the second substrate,

wherein a portion of a bottom surface of the lower electrode layer, a portion of a bottom surface of the light-emitting compound layer, and a portion of the bottom surface of the upper electrode layer are in direct contact with a top surface of the planarization film.

3. The method for manufacturing a light-emitting device according to claim 2 , wherein the third wiring contains copper.

4. The method for manufacturing a light-emitting device according to claim 2 , wherein the first substrate is formed using a metal or an alloy whose surface is subjected to an insulation treatment.

5. The method for manufacturing a light-emitting device according to claim 2 , wherein the third wiring overlaps the layer containing the light-emitting compound.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 20, 2012
From: YAMAZAKI, SHUNPEI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 027892/0241 →
Priority Claims (2)
JP 2011-064678 · Mar 23, 2011 · national
JP 2011-066900 · Mar 25, 2011 · national
Continuity (1)
Related Publication 20120244643A1 · Sep 27, 2012