Pattern formation method
According to one embodiment, a pattern formation method includes forming a resist pattern on an underlying film, slimming the resist pattern, forming a pinning portion having affinity for a first polymer by depositing, on a surface of the slimmed resist pattern, an etching product produced by etching the underlying film, forming a neutral, film having affinity for the first polymer and a second polymer on the underlying film after the etching, forming a block copolymer film containing the first polymer and the second polymer on the pinning portion and the neutral film, forming a microphase separation pattern by applying a predetermined process to the block copolymer film to perform microphase separation.
1. A pattern formation method comprising:
forming a resist pattern on an underlying film;
forming a pinning portion having affinity for a first polymer by slimming the resist pattern;
forming a neutral film having affinity for the first polymer and a second polymer on a part of the underlying film which is not covered by the slimmed resist pattern;
forming a block copolymer film containing the first polymer and the second polymer on the pinning portion and the neutral film;
forming a microphase separation pattern by applying a predetermined process to the block copolymer film to perform microphase separation, the microphase separation pattern having a structure in which a first portion formed of the first polymer and a second portion formed of the second polymer are arranged;
removing one of the first portion and the second portion; and
etching the underlying film before slimming the resist pattern.
2. The method of claim 1 , wherein
a surface of the slimmed resist pattern is modified.
3. The method of claim 1 , wherein
the resist pattern is slimmed using an oxygen gas.
4. The method of claim 1 , wherein
the underlying film contains silicon.
5. The method of claim 1 , wherein
the underlying film is formed of spin-on glass (SOG).
6. The method of claim 1 , wherein
the first polymer is polymethyl methacrylate (PMMA), and the second polymer is polystyrene (PS).
7. The method of claim 1 , wherein
the predetermined process includes a thermal process.
8. The method of claim 1 , wherein
the resist pattern is formed of a positive resist.
9. The method of claim 1 , wherein
the resist pattern is formed of a negative resist.
10. The method of claim 1 , wherein
a line-and-space pattern is formed by removing one of the first portion and the second portion.