Terminal structure and semiconductor device
The present invention relates to a terminal structure comprising; a base material 10 ; an external electrode 20 formed on the base material; an insulating coating layer 30 formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under-bump metal layer 70 filling the opening and covering part of the insulating coating layer; and a dome-shaped bump 85 covering the under-bump metal layer, wherein in a cross section along a lamination direction, the under-bump metal layer has a convex shape toward the bump, and the thickness T u0 of the under-bump metal layer at a center of the opening is equal to or greater than the thickness T u1 of the under-bump metal layer at an end portion of the opening.
1. A terminal structure comprising:
a base material;
an electrode formed on the base material;
an insulating coating layer formed on the base material and on the electrode and having an opening exposing at least part of the electrode;
an under-bump metal layer filling the opening and covering part of the insulating coating layer; and
a dome-shaped bump (i) covering the under-bump metal layer, (ii) being in direct contact with and covering part of the insulating coating layer, and (iii) continuously tapering inward from the insulating coating layer to a top of the dome-shaped bump, wherein:
in a cross section along a lamination direction, the under-bump metal layer has a convex shape toward the dome-shaped bump, and a thickness of the under-bump metal layer at a center of the opening is equal to or greater than the thickness of the under-bump metal layer at an end portion of the opening; and
a ratio R between distance AB from point A to point B and distance BC from point B to point C satisfies the following expression:
R= 0.50≧ BC/AB≧ 0.05.
(i) on an upper surface of the insulating coating layer, point A being a position of an end on the opening side of the insulating coating layer, (ii) point B being a position of an end of the under-bump metal layer, and (iii) on a basis of the upper surface of the insulating coating layer, point C being a position where the thickness of the under-bump metal layer is half the thickness of the under-bump metal layer at point A.
2. The terminal structure according to claim 1 , wherein the dome-shaped bump contains tin as a main component.
3. The terminal structure according to claim 1 , wherein the under-bump metal layer contains nickel as a main component.
4. The terminal structure according to claim 1 , wherein the dome-shaped bump contains titanium.
5. A semiconductor device comprising the terminal structure according to claim 1 .
6. The terminal structure according to claim 1 , wherein the cross-sectional diameter of the dome-shaped bump is the greatest at the insulating coating layer.
7. The terminal structure according to claim 1 , wherein in the cross section along the lamination direction, an upper surface of the under-bump metal layer includes curved portions and a substantially flat portion therebetween.
8. The terminal structure according to claim 3 , wherein the under-bump metal layer contains phosphorous.
9. The terminal structure according to claim 8 , wherein the under-bump metal layer contains 5 to 15 mass % of phosphorous.