Electrostatic discharge protection semiconductor device
An ESD protection semiconductor device includes a substrate, a gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, at least a first doped region formed in the source region, and at least a second doped region formed in the drain region. The source region, the drain region and the second doped region include a first conductivity type, and the first doped region includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other. The second doped region is electrically connected to the first doped region.
1. An electrostatic discharge (ESD) protection semiconductor device comprising:
a substrate;
a gate set formed on the substrate;
a source region and a drain region formed in the substrate respectively at two sides of the gate set, and the source region and the drain region comprising a first conductivity type, and the drain region being electrically connected to an input/output (I/O) pad:
a first doped region formed in a center of the source region, the first doped region comprising a second conductivity type, and the first conductivity type and the second conductivity type being complementary to each other; and
a second doped region formed in a center of the drain region, the second doped region comprising the first conductivity type, and the second doped region being electrically connected to the first doped region by wiring, wherein the second doped region is not grounded;
wherein the gate set comprises:
a third doped region comprising the first conductivity type;
a first gate structure positioned on the substrate and between the third doped region and the drain region without any intervening sub-doped region inbetween; and
a second gate structure positioned on the substrate and between the third doped region and the source region;
wherein the first gate structure being electrically connected to a power pad and the second gate structure being electrically connected to an input or ground pad.
2. The ESD protection semiconductor device according to claim 1 , further comprising:
a first blocking structure surrounding the first doped region and isolating the first doped region from the source region; and
a second blocking structure surrounding the second doped region and isolating the second doped region from the drain region.
3. The ESD protection semiconductor device according to claim 2 , wherein the first blocking structure and the second blocking structure comprise shallow trench isolation (STI) structure, dummy gate, or salicide blocking (SAB).
4. The ESD protection semiconductor device according to claim 1 , wherein the first gate structure and the second gate structure are electrically connected to each other by the third doped region.
5. The ESD protection semiconductor device according to claim 1 , wherein the first gate structure and the second gate structure are physically spaced apart from each other by the third doped region.