Stacked metal oxide semiconductor (MOS) and metal oxide metal (MOM) capacitor architecture
A device includes a first stacked capacitor comprising a first MOS capacitance and a first MOM capacitance, the first MOS capacitance coupled to a first node, the first node configured to receive a first bias voltage, and a second stacked capacitor comprising a second MOS capacitance and a second MOM capacitance, the second MOS capacitance coupled to the first node.
1. A device, comprising:
a first stacked capacitor comprising a first MOS capacitance and a first MOM capacitance, the first MOS capacitance coupled between an input node and a first node, the first node configured to receive a first bias voltage, wherein the first MOS capacitance comprises a first MOS varactor having a source and a drain coupled together; and
a second stacked capacitor comprising a second MOS capacitance and a second MOM capacitance, the second MOS capacitance coupled between an output node and the first node, wherein the second MOS capacitance comprises a second MOS varactor having a source and a drain coupled together, and wherein a capacitance of the device is provided between the input node and the output node.
2. The device of claim 1 , wherein the first and second MOS capacitances are configured to operate in a linear region responsive to the first bias voltage.
3. The device of claim 1 , wherein a capacitance of the first and second MOS capacitances and a capacitance of the first and second MOM capacitances are independently controlled.
4. The device of claim 1 , further comprising:
a third stacked capacitor architecture comprising a third MOS capacitance and a third MOM capacitance, the third MOS capacitance coupled between the input node and a second node, the second node configured to receive a second bias voltage; and
a fourth stacked capacitor architecture comprising a fourth MOS capacitance and a fourth MOM capacitance, the fourth MOS capacitance coupled between the output node and the second node, where the first node is configured to receive the first bias voltage and the second node is configured to receive a second bias voltage.
5. The device of claim 4 , wherein the first bias voltage establishes a non-zero voltage drop across the first MOS capacitance and the second MOS capacitance and the second bias voltage establishes a non-zero voltage drop across the third MOS capacitance and the fourth MOS capacitance.
6. The device of claim 1 , wherein the first and second MOS capacitances are coupled in series and the first and second MOM capacitances are coupled in series, and the series coupled MOM capacitances are coupled in parallel with the series-coupled MOS capacitances.
7. The device of claim 1 , wherein the first and second MOS capacitances are coupled in series and the first and second MOM capacitances are coupled in parallel, and the parallel coupled MOM capacitances are coupled in parallel with the series-coupled MOS capacitances.
8. The device of claim 1 , wherein the first bias voltage establishes a non-zero voltage drop across the first MOS capacitance and the second MOS capacitance.
9. The device of claim 1 , wherein a gate of each MOS varactor is coupled to the first node.
10. The device of claim 1 , wherein the source and drain of each MOS varactor are coupled to the first node.
11. The device of claim 1 , wherein the source and drain of the first MOS varactor are coupled to the first node, and a gate of the second MOS varactor is coupled to the first node.