Semiconductor device including oxide semiconductor
A change in electrical characteristics can be inhibited and reliability can be improved in a semiconductor device including an oxide semiconductor. The semiconductor device including an oxide semiconductor film includes a first insulating film, the oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and a third insulating film over the second insulating film. The second insulating film includes oxygen and silicon, the third insulating film includes nitrogen and silicon, and indium is included in a vicinity of an interface between the second insulating film and the third insulating film.
1. A semiconductor device comprising:
a first insulating film;
an oxide semiconductor film over the first insulating film;
a second insulating film over the oxide semiconductor film; and
a third insulating film over the second insulating film,
wherein the second insulating film includes oxygen and silicon,
wherein the third insulating film includes nitrogen and silicon,
wherein indium is included in a vicinity of an interface between the second insulating film and the third insulating film, and
wherein a concentration of indium at the interface is higher than a concentration of indium at a center of the second insulating film.
2. The semiconductor device according to claim 1 ,
wherein the indium is detectable in the vicinity of the interface by secondary ion mass spectrometry.
3. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor film includes O, In, Zn, and M, and
wherein M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf.
4. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor film includes a crystal part, the crystal part having a c-axis parallel to a normal vector of a surface over which the oxide semiconductor film is formed.
5. A display device comprising:
the semiconductor device according to claim 1 ; and
a display element.
6. A display module comprising:
the display device according to claim 5 ; and
a touch sensor.
7. An electronic appliance comprising:
the semiconductor device according to claim 1 ; and
at least one of an operation key and a battery.
8. The semiconductor device according to claim 1 ,
wherein a concentration of indium in the vicinity of the interface is greater than or equal to 5×10 16 atoms/cm 3 .
9. A semiconductor device comprising:
a gate electrode;
a first insulating film over the gate electrode;
an oxide semiconductor film over the first insulating film;
a source electrode electrically connected to the oxide semiconductor film;
a drain electrode electrically connected to the oxide semiconductor film;
a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode; and
a third insulating film over the second insulating film,
wherein the second insulating film includes oxygen and silicon,
wherein the third insulating film includes nitrogen and silicon,
wherein indium is included in a vicinity of an interface between the second insulating film and the third insulating film, and
wherein a concentration of indium at the interface is higher than a concentration of indium at a center of the second insulating film.
10. The semiconductor device according to claim 9 ,
wherein the indium is detectable in the vicinity of the interface by secondary ion mass spectrometry.
11. The semiconductor device according to claim 9 ,
wherein the oxide semiconductor film includes O, In, Zn, and M, and
wherein M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf.
12. The semiconductor device according to claim 9 ,
wherein the oxide semiconductor film includes a crystal part, the crystal part having a c-axis parallel to a normal vector of a surface over which the oxide semiconductor film is formed.
13. A display device comprising:
the semiconductor device according to claim 9 ; and
a display element.
14. A display module comprising:
the display device according to claim 13 ; and
a touch sensor.
15. An electronic appliance comprising:
the semiconductor device according to claim 9 ; and
at least one of an operation key and a battery.
16. The semiconductor device according to claim 9 ,
wherein a concentration of indium in the vicinity of the interface is greater than or equal to 5×10 16 atoms/cm 3 .
17. A semiconductor device comprising:
a first insulating film;
an oxide semiconductor film over the first insulating film;
a second insulating film over the oxide semiconductor film; and
a third insulating film over the second insulating film,
wherein the second insulating film includes oxygen and silicon,
wherein indium is included in a vicinity of an interface between the second insulating film and the third insulating film, and
wherein a concentration of indium at the interface is higher than a concentration of indium at a center of the second insulating film.
18. The semiconductor device according to claim 17 ,
wherein the indium is detectable in the vicinity of the interface by secondary ion mass spectrometry.
19. The semiconductor device according to claim 17 ,
wherein the oxide semiconductor film includes O, In, Zn, and M, and
wherein M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf.
20. The semiconductor device according to claim 17 ,
wherein the oxide semiconductor film includes a crystal part, the crystal part having a c-axis parallel to a normal vector of a surface over which the oxide semiconductor film is formed.
21. A display device comprising:
the semiconductor device according to claim 17 ; and
a display element.
22. A display module comprising:
the display device according to claim 21 ; and
a touch sensor.
23. An electronic appliance comprising:
the semiconductor device according to claim 17 ; and
at least one of an operation key and a battery.
24. The semiconductor device according to claim 17 ,
wherein a concentration of indium in the vicinity of the interface is greater than or equal to 5×10 16 atoms/cm 3 .