Touch organic light emitting diode display device and manufacturing method thereof
A touch organic light emitting diode (OLED) display device, including: a thin film transistor formed on one side of a substrate, a touch signal feedback layer formed on the thin film transistor, a luminous substrate provided on the touch signal feedback layer, and a touch signal receiving layer formed on the other side of the substrate. An anode layer of the luminous substrate is connected to a drain electrode of the thin film transistor. As to the touch-sensitive OLED display device, a touch screen and an OLED display portion are prepared integratedly, so that the weight and thickness of the display itself are greatly reduced, and the production cost is saved. A manufacturing method of the touch-sensitive OLED display device is further disclosed.
1. A touch organic light emitting diode display device, comprising:
a thin film transistor formed on a first side of a substrate,
a touch signal feedback layer formed on the thin film transistor,
a luminous substrate provided on the touch signal feedback layer, an anode layer of the luminous substrate being connected to a drain electrode of the thin film transistor, the anode layer of the luminous substrate being disposed above the touch signal feedback layer while an entirety of the touch signal feedback layer is disposed above the drain electrode of the thin film transistor; and
a touch signal receiving layer formed on a second side of the substrate.
2. The touch organic light emitting diode display device claimed as claim 1 , further comprising:
a protection layer formed on the thin film transistor, with the touch signal feedback layer being formed thereon; and
an interlayer insulation layer formed on the touch signal feedback layer,
wherein a first via hole is provided in the interlayer insulation layer, a second via hole is provided in the protection layer, the anode layer is formed on the interlayer insulation layer, and is connected to the drain electrode of the thin film transistor through the first via hole and the second via hole.
3. The touch organic light emitting diode display device claimed as claim 1 , wherein the luminous substrate includes the anode layer, and a luminous layer and a cathode layer that are formed on the anode layer in sequence.
4. The touch organic light emitting diode display device claimed as claim 3 , wherein a thickness of the anode layer is in a range of 400 Å to 700 Å.
5. The touch organic light emitting diode display device claimed as claim 1 , wherein each of the touch signal receiving layer and the touch signal feedback layer is made of at least one material selected from a group consisting of indium gallium zinc oxide, indium zinc oxide, indium tin oxide, and indium gallium tin oxide.
6. The touch organic light emitting diode display device claimed as claim 5 , wherein a thickness of the touch signal receiving layer is in a range of 400 Å to 700 Å.
7. The touch organic light emitting diode display device claimed as claim 5 , wherein a thickness of the touch signal feedback layer is in a range of 400 Å to 700 Å.
8. The touch organic light emitting diode display device claimed as claim 2 , wherein a material for the protection layer is SiOx or SiNx.
9. A manufacturing method of a touch organic light emitting diode display device, comprising:
forming a pattern of a touch signal receiving layer on a first side of a substrate;
forming a pattern of a thin film transistor comprising a drain electrode on a second side of the substrate;
forming a pattern of a touch signal feedback layer on the thin film transistor; and
forming a pattern of a luminous substrate comprising an anode layer on the touch signal feedback layer, the anode layer being connected to the drain electrode, the anode layer being disposed above the touch signal feedback layer while an entirety of the touch signal feedback layer is disposed above the drain electrode of the thin film transistor.
10. The manufacturing method of the touch organic light emitting diode display device claimed as claim 9 , wherein,
a pattern of a protection layer with a first via hole is formed on a source electrode and the drain electrode of the thin film transistor;
the pattern of the touch signal feedback layer is formed on the protection layer;
an interlayer insulation layer with a second via hole therein is formed on the touch signal feedback layer;
a pattern of the anode layer is formed on the interlayer insulation layer, and the anode layer is connected to the drain electrode through the first via hole and the second via hole.
11. The manufacturing method of the touch organic light emitting diode display device claimed as claim 10 , wherein a pattern of a luminous layer and a pattern of a cathode layer are formed on the anode layer through patterning processes sequentially.
12. The touch organic light emitting diode display device claimed as claim 2 , wherein the luminous substrate includes the anode layer, and a luminous layer and a cathode layer that are formed on the anode layer in sequence.
13. The touch organic light emitting diode display device claimed as claim 12 , wherein a thickness of the anode layer is in a range of 400 Å to 700 Å.
14. The touch organic light emitting diode display device claimed as claim 2 , wherein each of the touch signal receiving layer and the touch signal feedback layer is made of at least one material selected from a group consisting of indium gallium zinc oxide, indium zinc oxide, indium tin oxide, and indium gallium tin oxide.
15. The touch organic light emitting diode display device claimed as claim 14 , wherein a thickness of the touch signal receiving layer is in a range of 400 Å to 700 Å.
16. The touch organic light emitting diode display device claimed as claim 14 , wherein a thickness of the touch signal feedback layer is in a range of 400 Å to 700 Å.
17. The touch organic light emitting diode display device claimed as claim 1 , further comprising:
a protection layer formed above the thin film transistor, with the touch signal feedback layer being formed above the protection layer; and
an interlayer insulation layer formed above the touch signal feedback layer, with the anode layer being formed above the interlayer insulation layer;
wherein a first via hole is provided in the interlayer insulation layer, a second via hole is provided in the protection layer, the anode layer is connected to the drain electrode of the thin film transistor through the first via hole and the second via hole.