Compounds having low ionization energy
View Patent ↗The present invention provides compounds that are soluble in a non-polar solvent and having a low ionization energy and negative oxidation potentials in tetrahydrofuran (THF). The present invention also provides a method for producing and using the same.
1. A thin film comprising a compound of the formula: M a (L) b X c , wherein each M is independently tungsten or chromium; each L is independently a bicyclic heterocyclic anionic compound; X is a halide; a is 1 or 2; b is an integer from 1 to 4; and c is an integer from 0 to 2, and wherein said solid crystal has an onset ionization energy of about 4 eV or less and is soluble in an organic solvent.
2. The thin film of claim 1 , wherein said compound is soluble in an aprotic organic solvent.
3. The thin film of claim 1 , wherein said compound is soluble in a nonpolar organic solvent.
4. The thin film of claim 1 , wherein said compound has an oxidation potential in THF of about −1.5 V or less.
5. The thin film of claim 4 , wherein said compound has an oxidation potential in THF of about −1.8 V or less.
6. The thin film of claim 1 , wherein said compound has an onset ionization energy of about 3.6 eV or less.
7. The substrate of claim 1 , wherein the solubility of said compound in THF is at least 0.1 g/L.
8. The thin film of claim 7 , wherein the solubility of said compound in THF is at least 1 g/L.
9. The thin film of claim 1 , wherein the solubility of said compound in benzene is at least 0.1 g/L.
10. The thin film of claim 7 , wherein the solubility of said compound in benzene is at least 1 g/L.
11. An integrated circuit comprising a compound of the formula: M a (L) b X c , wherein each M is independently tungsten or chromium; each L is independently a bicyclic heterocyclic anionic compound; X is a halide; a is 1 or 2; b is an integer from 1 to 4; and c is an integer from 0 to 2, and wherein said compound has an oxidation potential in THF of about −1.5 V or less, and is soluble in an organic solvent.
12. The integrated circuit of claim 11 , wherein said compound has an oxidation potential in THF of about −1.8 V or less.
13. The integrated circuit of claim 11 , wherein said compound has an onset ionization energy of about 4 eV or less.
14. The integrated circuit of claim 13 , wherein said compound has an onset ionization energy of about 3.6 eV or less.
15. A compound of the formula:
M a (L) b X c
wherein
each M is independently tungsten or chromium;
each L is independently a bicyclic heterocyclic anionic compound;
X is a halide;
a is 1 or 2;
b is an integer from 1 to 4; and
c is an integer from 0 to 2.
16. The compound of claim 15 , wherein said bicyclic heterocyclic anionic compound is of the formula:
wherein
each of m and n is independently an integer from 0 to 4, provided the sum of m and n is at least 1; and
each of R 1 and R 2 is independently alkyl.
17. The compound of claim 16 , wherein R 1 and R 2 are independently methyl, or ethyl.
18. The compound of claim 16 , wherein m is 2.
19. The compound of claim 16 , wherein n is 2.
20. The compound of claim 16 , wherein said compound is of the formula:
M 2 (L) 4 X c
wherein
M and X are those defined in claim 15 ;
L is that defined in claim 16 ; and
c is an integer of 0 or 2.