CMOS image sensors including vertical transistor
Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.
1. A complementary metal-oxide-semiconductor (CMOS) image sensor comprising:
a substrate having a first device isolation layer defining and dividing a first active region and a second active region;
a photodiode disposed in the substrate and configured to vertically overlap the first device isolation layer;
a transfer gate electrode disposed in the first active region and configured to vertically overlap the photodiode, wherein the transfer gate electrode extends into the substrate; and
a floating diffusion region disposed in the first active region,
wherein the transfer gate electrode does not extend onto the floating diffusion region,
wherein the transfer gate electrode comprises:
a buried portion buried in the substrate; and
a protruding portion configured to protrude from a surface of the substrate,
wherein a width of the buried portion and a width of the protruding portion are different from each other, and
wherein at least one side surface of the protruding portion is recessed such that the buried portion includes an edge portion having a planar top surface.
2. The CMOS image sensor of claim 1 , further comprising a transfer gate spacer formed on the at least one side surface of the protruding portion,
wherein a lowermost end portion of the transfer gate spacer is disposed lower than the surface of the substrate.
3. The CMOS image sensor of claim 1 , wherein the protruding portion of the transfer gate electrode horizontally extends onto the first device isolation layer.
4. The CMOS image sensor of claim 1 , further comprising a transfer gate insulating layer interposed between the substrate and the transfer gate electrode,
wherein an upper end portion of the transfer gate insulating layer is disposed lower than the surface of the substrate.
5. The CMOS image sensor of claim 1 , wherein a lowermost end portion of the transfer gate electrode is disposed lower than a lowermost end portion of the first device isolation layer.
6. The CMOS image sensor of claim 1 , wherein the photodiode vertically overlaps a portion of the first active region and a portion of the second active region.
7. A complementary metal-oxide-semiconductor (CMOS) image sensor comprising:
a substrate having a first device isolation layer defining and dividing a first active region and a second active region;
a photodiode disposed in the substrate and configured to vertically overlap the first device isolation layer;
a transfer gate electrode disposed in the first active region and configured to vertically overlap the photodiode, wherein the transfer gate electrode extends into the substrate;
a floating diffusion region disposed in the first active region; and
a second device isolation layer configured to define the first active region,
wherein one side surface of the floating diffusion region is disposed adjacent to the transfer gate electrode, and the other side surface thereof abuts the second device isolation layer.
8. The CMOS image sensor of claim 1 , further comprising a reset gate electrode disposed on the second active region and having a planar transistor shape, and source/drain regions formed in the substrate adjacent to the reset gate electrode,
wherein one of the source/drain regions abuts the first device isolation layer and partially overlaps the photodiode.
9. A CMOS image sensor comprising:
a photodiode disposed in a substrate spaced apart from a surface of the substrate;
a device isolation layer, a transfer gate electrode, and a floating diffusion region disposed in the substrate adjacent to the surface of the substrate to vertically overlap the photodiode; and
an additional device isolation layer configured not to vertically overlap the photodiode and to abut a portion of the floating diffusion region,
wherein the transfer gate electrode comprises a buried portion configured to extend from the surface of the substrate into the substrate, and
wherein the transfer gate electrode does not extend onto the floating diffusion region.
10. The CMOS image sensor of claim 9 , wherein the device isolation layer defines a first active region and a second active region, and
the transfer gate electrode and the floating diffusion region are disposed in the first active region.
11. The CMOS image sensor of claim 7 , wherein a lowermost end portion of the transfer gate electrode is disposed lower than a lowermost end portion of the first device isolation layer.
12. The CMOS image sensor of claim 7 , wherein the photodiode vertically overlaps a portion of the first active region and a portion of the second active region.
13. The CMOS image sensor of claim 7 , further comprising a reset gate electrode disposed on the second active region and having a planar transistor shape, and source/drain regions formed in the substrate adjacent to the reset gate electrode,
wherein one of the source/drain regions abuts the first device isolation layer and partially overlaps the photodiode.