Organic light emitting diode display having high aperture ratio and method for manufacturing the same

1. A method for manufacturing an organic light emitting diode display, the method comprising:

preparing a substrate including an emission area and a non-emission area;

forming a thin film transistor in the non-emission area;

forming a first insulation layer overlapping the thin film transistor in the non-emission area;

forming a first storage capacitance electrode in the emission area on the first insulation layer;

forming a second insulation layer overlapping the first storage capacitance electrode and the thin film transistor except a portion of the thin film transistor;

forming an organic protective layer on the second insulation layer to overlap the thin film transistor except where said portion of the thin film transistor is exposed through the second insulation layer; and

forming an anode electrode on the second insulation layer to be electrically connected to the thin film transistor,

wherein the anode electrode and the first storage capacitance electrode are overlapped with each other with the second insulation layer interposed therebetween in the emission area to form a storage capacitor.

2. A method of manufacturing an organic light emitting diode (OLED) display, the method comprising:

forming a substrate including an emission area and a non-emission area;

forming a thin film transistor in the non-emission area of the substrate;

forming a storage capacitor in the emission area; and

forming an OLED in the emission area to overlap with the storage capacitor in at least a part of the emission area in a direction in which light is emitted by the OLED.

3. The method of claim 2 , wherein:

forming the storage capacitor includes forming a first storage electrode, an insulation layer, and a second storage electrode, the insulation layer formed between the first storage electrode and the second storage electrode; and

forming the OLED includes forming a cathode, an organic light emitting layer, and an anode, the organic light emitting layer formed between the cathode and the anode, both the cathode and the anode being a distinct layer separate from the first storage electrode and the second storage electrode.

4. The method claim 3 , wherein the first storage electrode and the second storage electrodes are formed of a transparent conductive material including at least one of indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO).

5. The method of claim 2 , further comprising:

forming an organic protective layer separating the storage capacitor from the OLED in substantially the entire emission area, the organic protective layer including an organic insulating material.

6. The method of claim 2 , wherein:

forming the storage capacitor includes forming a first storage electrode, an insulation layer, and an anode, the insulation layer formed between the first storage electrode and the anode; and

forming the OLED includes forming the anode, an organic light emitting layer, and a cathode, the organic light emitting layer formed between the anode and the cathode, the anode functioning as a second electrode of the storage capacitor.

7. The method of claim 6 , further comprising forming a bank layer in the non-emission area but not in the emission area.

8. The method of claim 6 , further comprising forming a bank layer in the non-emission area and in at least a part of the emission area in a vicinity of the thin film transistor.