Vertical tunnel field effect transistor (FET)
Among other things, one or more techniques for forming a vertical tunnel field effect transistor (FET), and a resulting vertical tunnel FET are provided herein. In an embodiment, the vertical tunnel FET is formed by forming a core over a first type substrate region, forming a second type channel shell around a circumference greater than a core circumference, forming a gate dielectric around a circumference greater than the core circumference, forming a gate electrode around a circumference greater than the core circumference, and forming a second type region over a portion of the second type channel shell, where the second type has a doping opposite a doping of the first type. In this manner, line tunneling is enabled, thus providing enhanced tunneling efficiency for a vertical tunnel FET.
1. A vertical tunnel field effect transistor (FET), comprising:
a semiconductor core comprising a doping of a first type material;
a second type channel shell around the semiconductor core, wherein the second type channel shell comprises a doping of a second type material opposite the doping of the first type material and the second type channel shell extends around a circumference of the semiconductor core; and
a gate electrode around the second type channel shell.
2. The vertical tunnel FET of claim 1 , comprising:
a gate dielectric disposed between the second type channel shell and the gate electrode.
3. The vertical tunnel FET of claim 1 , comprising:
a first type substrate region in contact with the semiconductor core and the second type channel shell.
4. The vertical tunnel FET of claim 3 , comprising:
a gate dielectric disposed between the second type channel shell and the gate electrode and disposed between the first type substrate region and the gate electrode.
5. The vertical tunnel FET of claim 1 , comprising:
a second type region in contact with the semiconductor core and the second type channel shell.
6. The vertical tunnel FET of claim 5 , comprising:
a first type substrate region in contact with the semiconductor core and the second type channel shell.
7. The vertical tunnel FET of claim 6 , wherein the second type channel shell is disposed between the first type substrate region and the second type region.
8. The vertical tunnel FET of claim 6 , wherein the semiconductor core is disposed between the first type substrate region and the second type region.
9. The vertical tunnel FET of claim 6 , wherein:
the second type channel shell is disposed between the first type substrate region and the second type region, and
the semiconductor core is in contact with a sidewall of the second type region.
10. The vertical tunnel FET of claim 1 , comprising:
a wide bandgap barrier disposed between the semiconductor core and the second type channel shell.
11. The vertical tunnel FET of claim 10 , comprising:
a first type substrate region; and
a second type region, the wide bandgap barrier disposed between the first type substrate region and the second type region.
12. The vertical tunnel FET of claim 1 , comprising:
a first type shell disposed between the semiconductor core and the second type channel shell.
13. The vertical tunnel FET of claim 12 , comprising:
a first type substrate region; and
a second type region, the first type shell disposed between the first type substrate region and the second type region.
14. The vertical tunnel FET of claim 12 , comprising:
a wide bandgap barrier disposed between the first type shell and the second type channel shell.
15. The vertical tunnel FET of claim 14 , comprising:
a first type substrate region; and
a second type region, the first type shell and the wide bandgap barrier disposed between the first type substrate region and the second type region.
16. The vertical tunnel FET of claim 1 , wherein a physical interface is defined between a sidewall of the semiconductor core and a sidewall of the second type channel shell.
17. A vertical tunnel field effect transistor (FET), comprising:
a semiconductor core comprising a doping of a first type material;
a second type channel shell around the semiconductor core, wherein the second type channel shell comprises a doping of a second type material opposite the doping of the first type material and the second type channel shell extends around a circumference of the semiconductor core;
a gate electrode around the second type channel shell;
a first type substrate region; and
a second type region, wherein:
the semiconductor core and the second type channel shell are disposed between the first type substrate region and the second type region.
18. The vertical tunnel FET of claim 17 , wherein:
the semiconductor core and the second type channel shell are in contact with the first type substrate region, and
the semiconductor core and the second type channel shell are in contact with the second type region.
19. A method for forming a vertical tunnel field effect transistor (FET), comprising:
forming a semiconductor core comprising a doping of a first type material;
forming a second type channel shell around the semiconductor core, wherein the second type channel shell comprises a doping of a second type material opposite the doping of the first type material and the second type channel shell extends around a circumference of the semiconductor core; and
forming a gate electrode around the second type channel shell.
20. The method of claim 19 , comprising forming a first type shell around the semiconductor core, wherein the second type channel shell is further formed around the first type shell.
21. A vertical tunnel field effect transistor (FET), comprising:
a semiconductor core comprising a doping of a first type material;
a second type channel shell around the semiconductor core, the second type channel shell comprising a doping of a second type material opposite the doping of the first type material;
a first type shell disposed between the semiconductor core and the second type channel shell; and
a gate electrode around the second type channel shell.