Metal oxide semiconductor transistor
A metal oxide semiconductor transistor includes a gate, a metal oxide active layer, a gate insulating layer, a source, and a drain. The metal oxide active layer has a first surface and a second surface, and the first surface faces to the gate. The gate insulating layer is disposed between the gate and the metal oxide active layer. The source and the drain are respectively connected to the metal oxide active layer. The second surface defines a mobility enhancing region between the source and the drain. An oxygen content of the metal oxide active layer in the mobility enhancing region is less than an oxygen content of the metal oxide active layer in the region outside the mobility enhancing region. The metal oxide semiconductor transistor has high carrier mobility.
1. A metal oxide semiconductor transistor, comprising:
a gate;
a metal oxide active layer, having a first surface and a second surface on two opposite sides of the metal oxide active layer, the first surface facing to the gate;
a gate insulating layer, disposed between the gate and the metal oxide active layer;
a source, connected to the metal oxide active layer; and
a drain, connected to the metal oxide active layer;
wherein the metal oxide active layer comprises a mobility enhancing region between the source and the drain, and an oxygen content of the metal oxide active layer in the mobility enhancing region is less than an oxygen content of the metal oxide active layer in a region outside the mobility enhancing region;
wherein the metal oxide semiconductor transistor further comprises a mobility enhancing layer disposed on the second surface of the metal oxide active layer, and the mobility enhancing layer is located above the mobility enhancing region and wider than the mobility enhancing region,
wherein the metal oxide semiconductor transistor further comprises an insulated protecting layer covering the source, the drain, and the metal oxide active layer,
wherein the mobility enhancing layer is spatially separated from the source and the drain by the insulated protecting layer and is uncontacted with the source and the drain,
wherein a material of the mobility enhancing layer comprises an ionic compound capable of bonding with oxygen, and the ionic compound is lithium aluminum hydride.
2. The metal oxide semiconductor transistor according to claim 1 , wherein the gate is located below the metal oxide active layer and the mobility enhancing layer is located above the metal oxide active layer.
3. The metal oxide semiconductor transistor according to claim 2 , wherein the insulated protecting layer entirely covers the mobility enhancing layer.
4. The metal oxide semiconductor transistor according to claim 2 , wherein the insulated protecting layer has an opening exposing a portion of the metal oxide active layer, and the opening is a through-hole, wherein the mobility enhancing layer is connected to the portion of the metal oxide active layer through the opening.
5. The metal oxide semiconductor transistor according to claim 1 , wherein the gate is located above the metal oxide active layer and the mobility enhancing layer is located below the metal oxide active layer.
6. The metal oxide semiconductor transistor according to claim 5 , further comprising a protecting layer covering the gate.
7. The metal oxide semiconductor transistor according to claim 5 , further comprising a substrate, the mobility enhancing layer being disposed on the substrate, and an interval layer being disposed on the substrate and between the mobility enhancing layer and the metal oxide active layer, wherein the mobility enhancing layer is contacted with the second surface of the metal oxide active layer exposed from the interval layer.
8. The metal oxide semiconductor transistor according to claim 1 , wherein the source and the drain are connected to the first surface of the metal oxide active layer or the source and the drain are connected to the second surface of the metal oxide active layer.